Semiconductor Energy Laboratory Co., Ltd.

Hitachi-High-Technologies Corporation

Hitachi High-Tech Corporation

Nec Corporation

Mitsubishi Electric Corporation

Organo Corporation

Masashi Fujita

Hidetomo Kobayashi

Yutaka Shionoiri

Kiyoshi Kato

Masashi Tsubuku

Seiichiro Kanno

Shuichi Nakagawa

Kazuaki Ohshima

Naoya Ishigaki

Shunpei Yamazaki

Yoshiyuki Kurokawa

Munehiro Kozuma

Takeshi Aoki

Takahiko Ishizu

Hiroki Kawada

Toshihiko Takeuchi

Hiroyuki Tomatsu

Yasushi Ebizuka

Makoto Nishihara

Satoru Iwama

Hiroyuki Miyake

Kazunori Watanabe

Kouhei Toyotaka

Takuro Ohmaru

Osamu Komuro

Tsutomu Murakawa

Masaki Mizuochi

Toru Tanabe

Akira Nishioka

Masakazu Takahashi

Makoto Kaneyasu

Kazuma Furutani

Katsunori Onuki

Yukio Maehashi

Asami Tadokoro

Hajime Sotokawa

Kumiko Shimizu

Daigo Shimada

Shinichi Ohashi

Takaaki Kikuchi

Yoshio Sunaoka

Kousuke Sasaki

Tasuku Izutani

Kazumasa Kawase

Yuichi Matsuo

Masahiro Tsunoda

Toshio Morita

Seiichi Shindo

Takashi Kobayashi

Toshitaro Harada

Kenta Nomura

Takaaki Nishimori

Ichiro Miyano

Katsuya Aibara

An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.

Semiconductor device

A semiconductor processing apparatus according to the present invention includes a main body cover that covers a main body device and a control device. The main body cover has a transfer opening for transferring a semiconductor, and the main body cover further has an intake port that generates an air flow in a horizontal direction inside the main body cover.

Ventilated semiconductor processing apparatus

A semiconductor device in which energy required for data transfer between an arithmetic device and a memory is reduced is provided. The semiconductor device includes a peripheral circuit and a memory cell array. The peripheral circuit has a function of a driver circuit and a control circuit for the memory cell array, and an arithmetic function. The peripheral circuit includes a sense amplifier circuit and an arithmetic circuit, and the memory cell array includes a memory cell and a bit line. The sense amplifier circuit has a function of determining whether the bit line is at a high level or a low level, and outputs the result to the arithmetic circuit. The arithmetic circuit has a function of performing a product-sum operation, the result of which is output from the semiconductor device.

Semiconductor device comprising memory cell array and arithmetic circuit

Provided are a light diffuser in which the brightness or hue in an emission surface of the light diffuser is controlled, a lighting device, and a method of manufacturing such a light diffuser. A light diffuser () includes: an incident surface () to receive first light (Li); a light scattering portion () that includes light scattering particles () present in a medium () and generates scattered light by guiding the received first light and scattering the received first light with the light scattering particles; and an emission surface () to emit the scattered light, wherein a concentration of the light scattering particles in the light scattering portion is distributed such that the concentration increases non-linearly and continuously or discontinuously with distance from an incident edge in a light guiding direction of the first light in the light scattering portion.

Light diffuser, lighting device, and method of manufacturing light diffuser

A semiconductor device having a novel structure is provided. The semiconductor device includes a CPU and an accelerator. The accelerator includes a first memory circuit and an arithmetic circuit. The first memory circuit includes a first transistor. The first transistor includes a semiconductor layer containing a metal oxide in a channel formation region. The arithmetic circuit includes a second transistor. The second transistor includes a semiconductor layer containing silicon in a channel formation region. The first transistor and the second transistor are provided to be stacked. The CPU includes a CPU core including a flip-flop provided with a backup circuit. The backup circuit includes a third transistor. The third transistor includes a semiconductor layer containing a metal oxide in a channel formation region.

Provided is an electromagnetic field shielding plate, etc., in which it is possible to reduce weight while achieving high shielding performance from relatively high-frequency electromagnetic fields. The electromagnetic field shielding plate is configured by layering a permalloy layercomprising a plate or sheet of permalloy, and an amorphous layercomprising an Fe&#x2014;Si&#x2014;B&#x2014;Cu&#x2014;Nb-based amorphous plate or sheet.

Electromagnetic field shielding plate, method for manufacturing same, electromagnetic field shielding structure, and semiconductor manufacturing environment

A semiconductor device in which a transistor has the characteristic of low off-state current is provided. The transistor comprises an oxide semiconductor layer having a channel region whose channel width is smaller than 70 nm. A temporal change in off-state current of the transistor over time can be represented by Formula (a2). In Formula (a2), Irepresents the off-state current, t represents time during which the transistor is off, &#x3b1; and &#x3c4; are constants, &#x3b2; is a constant that satisfies 0&#x3c;&#x3b2;&#x2264;1, and Cis a constant that represents load capacitance of a source or a drain. 

Semiconductor device and method for measuring current of semiconductor device

To provide a novel semiconductor device or display device. The semiconductor device includes a decoder circuit, an amplifier circuit, and an arithmetic circuit. The amplifier circuit includes a first amplifier and a second amplifier. One of the first amplifier and the second amplifier has a function of inspecting an output of the other of the first amplifier and the second amplifier. The arithmetic circuit has a function of calculating an error of a potential output from the first amplifier or the second amplifier, on the basis of a result of the inspection. The decoder circuit has a function of correcting a video signal input to the decoder circuit by subtracting the error of the potential from the video signal.

Semiconductor device, display device, and electronic device

An object of the present invention is to provide a charged particle beam device that suppresses the influence of an external electromagnetic wave, even when a shielding member, such as a vacuum valve, is in the open state. To achieve the above object, a charged particle beam device including a vacuum chamber () having an opening () that surrounds a sample delivery path is proposed. The charged particle beam device includes a conductive material () surrounding the opening () for conduction between the vacuum chamber () and a conductive member () disposed on the atmosphere side. According to an embodiment of the present invention, it is possible to restrict an electromagnetic wave () from reaching the sample chamber via the delivery path.

Conductive interface system between vacuum chambers in a charged particle beam device

A semiconductor device with low power consumption is provided. The semiconductor device can serve as a current output DA converter. The semiconductor device converts a current corresponding to a digital signal into a voltage and then holds the voltage, which allows output of the analog voltage even after stopping supply of the current. A plurality of circuits that converts a current into a voltage is provided, whereby a settling time for changing the analog output voltage is reduced.

Semiconductor device and electronic device

Provided is a highly reliable semiconductor device, a semiconductor device with a reduced circuit area, a memory element having favorable characteristics, a highly reliable memory element, or a memory element with increased storage capacity per unit volume. A semiconductor device includes a capacitor and a switching element. The capacitor includes a first electrode, a second electrode, and a dielectric. The dielectric is positioned between the first electrode and the second electrode. The switching element includes a first terminal and a second terminal. The first terminal is electrically connected to the first electrode. The following steps are sequentially performed: a first step of turning on the switching element in a first period, a second step of turning off the switching element in a second period, and a third step of turning on the switching element in a third period.

Method for operating semiconductor device

Growing community of inventors

Tokyo, Japan

Masashi Fujita