Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Masashi Bando

Shintarou Hirata

Yosuke Saito

Iwao Yagi

Hideaki Mogi

Masaki Murata

Osamu Enoki

Yasuharu Ujiie

Yohei Hirose

Kenichi Murata

Keisuke Shimizu

Masahiro Joei

Toshiki Moriwaki

Masakazu Muroyama

Yukio Kaneda

Koji Kadono

Yuichi Tokita

Michinori Shiomi

Nozomi Kimura

Hajime Kobayashi

Ryosuke Suzuki

Mitsunori Nakamoto

Yoshiyuki Hirano

Raku Shirasawa

Takashi Abe

Kyoko Izuha

Ryoto Yoshita

Yoshimichi Kumagai

Hideyuki Kumita

Toshiyuki Kobayashi

Yu Kato

Yuya Kumagai

Sachiko Sakaigawa

Naoyuki Osawa

Provided is a solid-state imaging element that includes a first photoelectric conversion unit having a light incident surface on which light is incident, a first gate electrode provided in the first photoelectric conversion unit via an insulating film, and a second photoelectric conversion unit provided on a side of the light incident surface with respect to the first photoelectric conversion unit. The solid-state imaging element further includes a voltage application unit that applies a voltage corresponding to the number of charges accumulated by the second photoelectric conversion unit to the first gate electrode.

Solid-state imaging element, imaging device, and method of controlling solid-state imaging element

An imaging element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes; a second electrode opposed to the first electrode; a photoelectric conversion layer including an organic material provided between the first electrode and the second electrode; a first semiconductor layer provided between the first electrode and the photoelectric conversion layer, and including an n-type semiconductor material; and a second semiconductor layer provided between the second electrode and the photoelectric conversion layer, and including at least one of a carbon-containing compound having an electron affinity larger than a work function of the first electrode or an inorganic compound having a work function larger than the work function of the first electrode.

Imaging element and imaging apparatus

A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and—an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

Solid-state imaging element and solid-state imaging apparatus

To provide a photoelectric conversion element that can improve image quality. Provided is a photoelectric conversion element including at least a first electrode, a work function control layer, a photoelectric conversion layer, an oxide semiconductor layer, and a second electrode in this order, and further including a third electrode, in which the third electrode is provided apart from the second electrode and is provided facing the photoelectric conversion layer via an insulating layer, and the work function control layer contains a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition.

Photoelectric conversion element, solid-state imaging device, and electronic device

An imaging device including an imaging unit in which a plurality of shared sections each including two pixel regions adjacent at least in a first direction is provided and the shared sections provided at closest positions in a second direction are disposed to shift in the first direction by the one pixel region, a photoelectric converter provided for each of the pixel regions, an electric charge holding unit that holds signal charge generated by the photoelectric converter, an electric charge voltage converter to which the signal charge is transferred from the electric charge holding unit, and a pixel transistor that is electrically coupled to the electric charge voltage converter. The second direction intersects the first direction. The pixel transistor is provided for each of the shared sections.

Imaging device

A photoelectric conversion element includes a first electrode including a plurality of electrodes independent from each other, a second electrode disposed to be opposed to the first electrode, an n-type photoelectric conversion layer including a semiconductor nanoparticle, and a semiconductor layer including an oxide semiconductor material. The semiconductor layer is provided between the first electrode and the n-type photoelectric conversion layer. The n-type photoelectric conversion layer is provided between the first electrode and the second electrode. A carrier density of the n-type photoelectric conversion layer is higher than a carrier density of the semiconductor layer.

Photoelectric conversion element and imaging device

To provide a photoelectric conversion element that can improve image quality. Provided is a photoelectric conversion element () including at least a first electrode (), a work function control layer (), a photoelectric conversion layer (), an oxide semiconductor layer (), and a second electrode () in this order, and further including a third electrode (), in which the third electrode () is provided apart from the second electrode () and is provided facing the photoelectric conversion layer () via an insulating layer (), and the work function control layer () contains a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition.

A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes independent from each other; a second electrode disposed to be opposed to the first electrode; an n-type photoelectric conversion layer including a semiconductor nanoparticle, the n-type photoelectric conversion layer being provided between the first electrode and the second electrode; and a semiconductor layer including an oxide semiconductor material, the semiconductor layer being provided between the first electrode and the n-type photoelectric conversion layer.

An imaging element includes a photoelectric conversion unit formed by laminating a first electrode, a photoelectric conversion layerA, and a second electrode. Between the first electrodeand the photoelectric conversion layerA, a first semiconductor material layerBand a second semiconductor material layerBare formed from the first electrode side, and the second semiconductor material layerBis in contact with the photoelectric conversion layerA. The photoelectric conversion unit further includes an insulating layerand a charge accumulation electrodedisposed apart from the first electrodeso as to face the first semiconductor material layerBvia the insulating layer. When the carrier mobility of the first semiconductor material layerBis represented by &#x3bc;, and the carrier mobility of the second semiconductor material layerBis represented by &#x3bc;, &#x3bc;&#x3c;&#x3bc;is satisfied.

Imaging element, laminated imaging element, and solid-state imaging device

An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1). 

Photoelectric conversion element, image pickup element, laminated image pickup element, and solid-state image pickup device

A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an&#x2014;upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

There is provided an imaging element that has a stacked structure of a first electrode, an organic photoelectric conversion layer, and a second electrode. A first organic material layer and a second organic material layer are formed between the first electrode and the organic photoelectric conversion layer from the first electrode side.

Photoelectric conversion element, imaging element, stacked-type imaging element, and solid-state imaging apparatus

There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.

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Kanagawa, Japan

Masashi Bando