Fuji Electric Co., Ltd.

Fuji Electric Systems Co. Ltd.

Masashi Akahane

Yoshiaki Toyoda

Hitoshi Sumida

Akihiro Jonishi

Rongxiang Wu

Lulu Peng

Motomitsu Iwamoto

Johnny Kin On Sin

Hidetomo Ohashi

Takahiro Mori

Haruhiko Nishio

Minoru Nishio

Johnny Kin-On Sin

Taizo Asano

Hiroshi Tobisaka

An integrated circuit includes: a power supply line configured to receive a power supply voltage; a constant current source electrically coupled to the power supply line; a reference voltage circuit electrically coupled to the constant current source; and a first resistor having two ends, one end thereof being electrically coupled to the constant current source, and the other end thereof being electrically coupled to the reference voltage circuit. The reference voltage circuit is a bandgap circuit including a plurality pf bipolar devices. The first resistor is configured to decrease a leakage current in the bipolar devices when a temperature thereof rises.

Integrated circuit and semiconductor module

Provided is a delay apparatus which outputs a delayed signal obtained by delaying an asynchronous input signal, the delay apparatus comprising: a synchronous delay unit which determines, in response to detection of a change in the asynchronous input signal at a detection timing synchronous with a clock signal, a synchronous delay timing later than the detection timing by a reference delay time according to the clock signal; and an asynchronous delay unit which changes the delayed signal at an asynchronous delay timing obtained by delaying the synchronous delay timing by an adjustment time obtained by subtracting a detection delay time from a change timing of the asynchronous input signal to the detection timing from a set time according to the clock signal.

Delay apparatus and delay method

A power supply circuit configured to generate an output voltage at a target level from an input voltage thereof. The power supply circuit includes a wiring configured to receive the input voltage, a variable resistor provided between the wiring and a predetermined node, a voltage generation circuit configured to apply a voltage at a predetermined level to the predetermined node based on a current from the variable resistor, an output circuit configured to output the output voltage at the target level, in response to the voltage at the predetermined level being applied to the predetermined node, and an adjustment circuit configured to increase a resistance value of the variable resistor in response to a predetermined time period having elapsed since starting of generation of the output voltage.

Power supply circuit and switching control circuit

Provided is a driving apparatus including a temperature detection circuit configured to output a temperature detection signal corresponding to a temperature of a switching device, a current detection circuit configured to sample, at a timing during an ON period of the switching device, a current detection signal corresponding to a current that flows in the switching device, and a driving circuit configured to adjust, according to the temperature detection signal and the current detection signal, a driving current to be supplied to a control terminal of the switching device. When the current detection signals are the same, the driving circuit may decrease the driving current according to the temperature detection signal indicating a lower temperature of the switching device. When the temperature detection signals are the same, the driving circuit may decrease the driving current according to the current detection signal indicating a smaller current regarding the main current.

Driving apparatus and driving method

A power module including a plurality of drive devices. Each drive device includes a high-side drive element and a low-side drive element that drive a load, a high-side control circuit that controls the high-side drive element, and a low-side control circuit that controls the low-side drive element. Each of the high-side and low-side control circuits includes an abnormality detection circuit that detects an abnormal state of the high-side or low-side drive element, a capability-switch-function-equipped drive circuit that switches a drive capability of the high-side or low-side drive element, responsive to the detection of the abnormal state by any one of the abnormality detection circuits in the plurality of drive devices, and a drive capability switch circuit that switches a drive capability of the capability-switch-function-equipped drive circuit, responsive to the detection of the abnormal state by the abnormality detection circuit.

Power module and level conversion circuit thereof

Provided is an overcurrent detection circuit for detecting an overcurrent flowing upon turning on of a switching element, the overcurrent detection circuit including a main current detection unit configured to detect whether an input signal according to a main current is higher than or equal to a set detection threshold, and a condition control unit configured to control at least one of a waveform of the input signal in the main current detection unit or the detection threshold to control a comparison condition in the main current detection unit, in which the condition control unit is configured to set the comparison condition to a first condition during a period from the turning on of the switching element until elapse of a first period, and set the comparison condition to a second condition during a period from the elapse of the first period until elapse of a second period.

Overcurrent detection circuit and drive circuit

Provided is a device including a series circuit in which a rectifying element and a fuse element are connected in series, in which one end on an anode side of the rectifying element in the series circuit is connected to a first connection point having a reference potential, and another end on a cathode side of the rectifying element in the series circuit is connected to a second connection point that is to have a potential higher than the reference potential. The device may further include a parallel circuit in which a plurality of the series circuits is connected in parallel. A rectifying characteristic of the rectifying element in at least one of the series circuits connected in parallel may be different from a rectifying characteristic of the rectifying element in at least another one of the series circuits connected in parallel.

Device, semiconductor apparatus, gate driver, and power module

A slave communication apparatus including a clock recovering section that recovers a clock signal from a transmission signal having a first signal value when the clock is a first level, a second signal value when the clock is a second level and data has a first data value, and a third signal value between the first and second signal values when the clock is the second level and the data has a second data value; and a data recovering section that recovers the data, wherein the data recovering section sets the data threshold value to be a first setting value between the second and third signal values in response to the recovered data having the second data value, and sets the data threshold value to be a second setting value between the first and third signal values in response to the recovered data having the first data value.

Slave communication apparatus and master communication apparatus

An integrated circuit, including: a first current source; a second current source provided in parallel to the first current source; a first resistor with one end coupled to an output of the first current source; a first bipolar transistor that is diode-connected and is coupled to the other end of the first resistor; a second bipolar transistor that is diode-connected and is coupled to an output of the second current source; a second resistor coupled to the second bipolar transistor; and an output circuit configured to output a voltage based on a first voltage outputted from the first current source and a second voltage outputted from the second current source.

A comparator circuit configured to output an output voltage at a first logic level, upon an input voltage exceeding a first threshold voltage, and output the output voltage at a second logic level, upon the input voltage dropping below a second threshold voltage lower than the first threshold voltage. The comparator circuit includes a converter circuit configured to convert the input voltage of the comparator circuit into a first voltage and a second voltage lower than the first voltage, and a logic circuit configured to output a voltage, as the output voltage of the comparator circuit, that is at the first logic level, upon the first voltage exceeding a third threshold voltage, and at the second logic level, upon the second voltage dropping below a fourth threshold voltage lower than the third threshold voltage.

Comparator circuit and semiconductor device

To provide a filter circuit and a semiconductor device capable of preventing circuit malfunction even when power supply voltage fluctuates. A filter circuit includes: a latch circuit configured to latch a set signal input to a first input terminal and a reset signal input to a second input terminal, respectively; and a rise adjustment unit configured to make a rise time of the set signal or the reset signal at power-on shorter than a time specified by a time constant circuit arranged in a preceding stage of the latch circuit.

Filter circuit and semiconductor device

A pressure sensor element and a receiving circuit are formed on an IC chip. A transmitting circuit and a piezoelectric element of an actuator are respectively formed on a transmitting chip and a piezoelectric chip. The piezoelectric chip and the pressure sensor face each other separated by a distance in an airtight first space surrounded by a package main body and a base substrate. Dielectric breakdown voltage of signal transmission from the primary side to the secondary side is set by the distance. The first space is a pressure propagation region including an insulating medium capable of transmitting vibrations of the piezoelectric element as pressure. The signal transmission is performed with high insulation by the pressure generated in the pressure propagation region between components integrated in a single module by insulating the primary side and the secondary side from each other by the insulating medium of the pressure propagation region.

Signal transmitting device

A drive circuit includes: a control section generating a control signal; a first level shift section raising a level of a signal from the control section; a high side drive section controlling a semiconductor device; and a second level shift section lowering a level of a signal from the high side drive section for input to the control section. The high side drive section has an error detection section maintaining an output of an error detection signal when the semiconductor device is in an error status until a release signal is input, the control section has an error handling section outputting the release signal to the high side drive section via the first level shift section when the error detection signal is input via the second level shift section, and the error detection section stops the output of the error detection signal when the release signal is input.

Drive circuit, drive method, and semiconductor system

A control device includes a current detecting section that detects a sense current for a current flowing through a semiconductor element; a transient sensing period detecting section that detects a transient sensing period from a transient rising to a transient falling of a detection signal of the sense current, in response to the semiconductor element being turned ON; and a control section that controls the semiconductor element according to a detection result of the transient sensing period, based on the sense current detection signal. By detecting the transient sensing period with the transient sensing period detecting section and controlling the semiconductor element with the control section according to the transient sensing period detection result, based on the sense current detection signal, it is possible to identify overcurrent according to the transient response detection result of the sense current during the transient sensing period, and to actively protect the semiconductor element.

Overcurrent sense control of semiconductor device

A drive circuit having a set-side level shift circuit and a reset-side level shift circuit each configured to shift a level of a set or reset signal, and output the level-shifted set or reset signal from a set-side or reset-side output node, a mask-signal generating circuit configured to output a mask signal in response to a change in a voltage at the set-side or reset-side output node, and a control circuit configured to output a drive signal to a power device. The mask signal is for a time period shorter than a time period during which the level-shifted set or reset signal is outputted. The drive signal remains at a same level while the control circuit is receiving the mask signal, and switches to a first level or a second level, for turning off or on the power device, in response to the control circuit receiving the level-shifted reset or set signal after receiving the mask signal.

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Matsumoto, Japan

Masashi Akahane