Shindengen Electric Manufacturing Company Limited

Japan Atomic Energy Research Institute

Yamanashi Electronics Co., Ltd.

Masaru Wakatabe

Shinji Kunori

Mitsugu Tanaka

Minoru Kumakura

Kazuhiko Shima

Masahiro Horigome

Mitsuhiro Yoshitome

Takashi Kan

Akira Sugiyama

A semiconductor rectifier having a high breakdown voltage and a high speed operation is provided, which comprises a semiconductor substrate including a first semiconductor layer of one conductivity type and a second semiconductor layer of one conductivity type provided on the first semiconductor layer, a third semiconductor layer of an opposite conductivity type having a depth D and formed in the second semiconductor layer to provide a pn junction therebetween, the third semiconductor layer defining a plurality of exposed regions of the second semiconductor layer, each of the plurality of exposed regions of the second semiconductor layer having a width W, a relation between the depth D and the width W being given by D.gtoreq.0.5W, and a metal electrode provided on the substrate surface.

Semiconductor rectifier having high breakdown voltage and high speed

A semiconductor rectifier having a high breakdown voltage and a high speed operation is provided, which includes a semiconductor substrate having an N.sup.+ -type semiconductor layer and an N-type semiconductor layer, a P.sup.+ -type semiconductor layer formed in the N-type semiconductor layer to provide a PN junction therebetween, the P.sup.+ -type semiconductor layer defining exposed regions of the N-type semiconductor layer, and a metal layer provided on an entire surface of the semiconductor substrate having the P.sup.+ -type semiconductor layer to provide contact surfaces of Schottky barrier between the metal layer and each of the exposed regions of the N-type semiconductor layer. In the structure, a configuration of the PN junction is provided to satisfy conditions given by 0.degree.&lt;.theta..ltoreq.135.degree. and 3Wbi.ltoreq.W.ltoreq.2W.sub.B where .theta. is an angle between one of the contact surfaces and a tangent line passing through a point f on the PN junction through which a straight line passes from a top of a built-in depletion layer in parallel with each of the contact surfaces and where W.sub.bi is a thickness of the built-in depletion layer extending to the N-type semiconductor layer at zero bias voltage, W is a width of each of the contact surfaces and W.sub.B is a thickness of a depletion layer at breakdown of the pn junction, respectively.

An electrophotographic photoreceptor comprises a photoconductive layer having a protective layer disposed thereon, said protective layer being formed by dehydrocondensation of the hydrolyzate of a perfluoroalkyl silane coupling agent, or the hydrolyzate of a mixture of a perfluoroalkyl silane coupling agent and a silane coupling agent. The photoreceptor is very useful in that it can exhibit a high performance even in an environment at a higher temperature and at a higher humidity and that it has a high resistance to the abrasion with a great number of sheets being printed and with the cleaning members and that it is capable of preserving a high resolution without any image blurring.

Electrophotographic photoreceptor having silicate with perfluoroalkyl

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Saitama, Japan

Masaru Wakatabe