Sony Corporation

Ulvac, Inc.

Other

Masaru Wada

Masanori Murakami

Ryouichi Yasuda

Takeo Oku

Shinichiro Kondo

Akira Otsuki

Chihiro Uchibori

Yuki Oishi

Aya Shuto

Yuriko Kaino

Kenichi Kurihara

Taichi Takeuchi

Nobukazu Hirai

Isao Takahashi

Satoko Asaoka

Asuka Tejima

Yusuke Kajio

Yoji Kato

Kentarou Takesue

Yuu Kawagoe

Seiichi Watanabe

Hidetoshi Kawasaki

Chiaki Takano

Kazutoshi Takahashi

Junya Kiyota

Motoshi Kobayashi

Masaki Takei

Mitsuru Ueno

Koji Hidaka

Kouichi Matsumoto

Motohide Nishimura

[Object] To provide a sputtering target for producing an oxide semiconductor thin film having high properties, which serves as a substitute for IGZO, and a method of producing the same. [Solving Means] In order to achieve the above-mentioned object, a sputtering target according to an embodiment of the present invention includes: an oxide sintered body including indium, tin, and germanium, in which an atom ratio of germanium with respect to a total of indium, tin, and germanium is 0.07 or more and 0.40 or less, and an atom ratio of tin with respect to the total of indium, tin, and germanium is 0.04 or more and 0.60 or less. As a result, it is possible to achieve transistor characteristics of having mobility of 10 cm/Vs or more.

Sputtering target and method of producing sputtering target

A product design system includes a first transmitting section that uses a look-up table to convert second design image data for which image correction is completed into third design image data of a color space that is represented with a thermochromic material, and transmits the third design image data derived from the conversion to an external apparatus, and a second transmitting section that transmits a decorating request based on fourth design image data that is profile-transformed from the second design image data to a decorating apparatus.

Product design system and design image correction apparatus

A thin-film transistor according to an embodiment of the present invention includes: a gate electrode; an active layer formed of an oxide containing indium, zinc, and titanium; a gate insulating film formed between the gate electrode and the active layer; and a source electrode and a drain electrode that are electrically connected to the active layer. Atomic proportions of elements relative to the total quantity of indium, zinc, and titanium that constitute the oxide may be not less than 24 at. % and not more than 80 at. % for indium, not less than 16 at. % and not more than 70 at. % for zinc, and not less than 0.1 at. % and not more than 20 at. % for titanium.

Thin-film transistor, oxide semiconductor film, and sputtering target

A recording device according to the present disclosure includes: a writer that rewrites schedule information visibly recorded on a recording medium and corresponding to a time from first schedule information to second schedule information; and a generator that generates the second schedule information on the basis of a time.

Recording device and recording system

A semiconductor apparatus in which a conducting path formed from organic semiconductor molecules as a material has a novel structure and exhibits high mobility, and a manufacturing method for fabricating the same are provided. Fine particles that include a conductor or a semiconductor and organic semiconductor molecules, are alternately bonded through a functional group at both terminals of the organic semiconductor molecules to form a conducting path in a network form such that the conducting path in the fine particles and the conducting path in the organic semiconductor molecules are two-dimensionally or three-dimensionally linked together. This conducting path includes no intermolecular electron transfer, and the mobility is not restricted by the intermolecular electron transfer, and therefore the mobility of the conducting path along the main chain in the organic semiconductor molecules (in the direction of the axis of the molecule), for example, displays a high intramolecular mobility due to delocalized &#x3c0; electrons can be fully utilized.

Semiconductor device and method for manufacturing the same

Semiconductor apparatus and process for fabricating same

Semiconductor apparatus and process for fabricating the same

For suppressing generation of leakage current and side-gate effect in a junction field effect transistor, a gate extension is formed on a semi-insulative compound semiconductor substrate in a manner to extend from a gate and to protrude outward beyond a channel transversely thereto, and an insulating layer is formed on the semi-insulative compound semiconductor substrate under the gate extension. A method of producing this transistor comprises the steps of first forming a channel and a source-drain on a substrate, then forming a gate on the channel together with a gate extension which extends from the gate and protrudes outward beyond the channel transversely thereto, and forming an insulating layer adjacently to the channel and the source-drain in such a manner that no gap is existent between the insulating layer and at least the channel.

Junction field effect transistor and method of producing the same

An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics is disclosed. A non-single crystal InAs layer, Ni film, WSi film and W film are sequentially deposited on an n.sup.+ -type GaAs substrate by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is then annealed first at, e.g. 300.degree. C. for 30 minutes and next at, e.g. 650.degree. C. for one second to fabricate an ohmic electrode.

Multi-layered structure for ohmic electrode fabrication

Method for fabricating ohmic electrode and multi-layered structure for

A method for selectively diffusing impurities such as zinc into the substrate of a compound semiconductor such as gallium arsenide (GaAs). The method makes use of a diffusion mask in such a manner that the thickness of the oxygen-containing layer at the interface between the diffusion mask and the semiconductor substrate is less than 20.ANG. so that the abnormal transverse diffusion that would otherwise occur at the interface in the vicinity of the opening of the diffusion mask on the semiconductor surface is suppressed. The result is an increased accuracy in the diffusion pattern of the impurities.

Method of diffusion of impurities

A semiconductor apparatus which includes a semiconductor substrate with semi-insulating properties and with a first region of a first conductivity type which will become the emitter region and a second region of the same first conductivity type which will become a collector region with the first and second regions formed in the semi-insulating semiconductor substrate and spaced apart from each other and a third region of a second conductivity type formed in the semi-insulating conductor substrate between the first and second regions and with forward biasing voltage applied between the third and first regions so as to form an imaginary base region in the semi-insulating semiconductor substrate beneath the third region due to implanted majority carriers from the third region so that the semiconductor apparatus operates as a bipolar transistor and wherein at least the first and/or the third regions consist of a plurality of regions.

Semiconductor apparatus

Growing community of inventors

Kanagawa, Japan

Masaru Wada