Tamura Corporation

Koha Co., Ltd.

Stanley Electric Co., Ltd

Meijo University

Masaru Takizawa

Akito Kuramata

Kimiyoshi Koshi

Shinya Watanabe

Takekazu Masui

Yu Yamaoka

Makoto Watanabe

Ji-Hao Liang

Tetsuya Takeuchi

Kazuyuki Iizuka

Seiichiro Kobayashi

Isamu Akasaki

Komei Tazawa

Daiki Wakimoto

Kazuki Kiyohara

Keisuke Nakata

A semiconductor device includes a semiconductor layer including a GaO-based single crystal, and an electrode that is in contact with a surface of the semiconductor layer. The semiconductor layer is in Schottky-contact with the electrode and has an electron carrier concentration based on reverse withstand voltage and electric field-breakdown strength of the GaO-based single crystal.

Schottky barrier diode

Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.

Semiconductor multilayer film reflecting mirror and vertical cavity light-emitting element

A &#x3b2;-GaO-based single-crystal substrate includes a &#x3b2;-GaO-based single crystal, and a principal surface being a plane parallel to a b-axis of the &#x3b2;-GaO-based single crystal. A maximum value of &#x394;&#x3c9; on an arbitrary straight line on the principal surface that passes through a center of the principal surface is not more than 0.7264. The &#x394;&#x3c9; is a difference between a maximum value and a minimum value of values obtained by subtracting &#x3c9;from &#x3c9;at each of measurement positions, where &#x3c9;represents an angle defined by an X-ray incident direction and the principal surface at a peak position of an X-ray rocking curve on the straight line and &#x3c9;represents an angle on an approximated straight line obtained by using least-squares method to linearly approximate a curve representing a relationship between the &#x3c9;and the measurement positions thereof.

&#x3b2;-Ga2O3 single-crystal substrate

A vertical cavity light emitting device includes: a first multilayer film reflector; a semiconductor structure layer that is formed on the first multilayer film reflector and includes a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type opposite to the first conductivity type; an insulating current confinement layer formed on the semiconductor layer of the second conductivity type; a through opening formed in the current confinement layer; a transparent electrode for covering the through opening and the current confinement layer, the transparent electrode being in contact with the semiconductor layer of the second conductivity type through the through opening; a second multilayer film reflector formed on the transparent electrode; and a mixed composition layer formed to be in contact with an edge of the through opening and in which the current confinement layer and the transparent electrode are mixed.

Vertical cavity light emitting device

Provided is one embodiment which is a method for growing a &#x3b2;-GaO-based single crystal which uses the EFG method and includes raising a GaOmelt inside a crucible up to a die opening via a die slit such that a seed crystal is contacted with the GaO-based melt in the opening of the die with a horizontal position of the seed crystal shifted in a width direction (W) from a center in the width direction (W) of the die, and pulling up the seed crystal contacting the GaO-based melt so as to grown a &#x3b2;-GaOsingle crystal.

[object Object]

A semiconductor device, includes an n-type semiconductor layer provided with a first semiconductor layer with a low electron carrier concentration and a second semiconductor layer with a high electron carrier concentration, an electrode that is in Schottky-contact with a surface of the first semiconductor layer, and an ohmic electrode formed on a surface of the second semiconductor layer. The n-type semiconductor layer is formed of a GaO-based single crystal. The first semiconductor layer has an electron carrier concentration Nd based on reverse withstand voltage VRM and electric field-breakdown strength Em of the GaO-based single crystal.

A &#x3b2;-GaO-based single crystal substrate includes an average dislocation density of less than 7.31&#xd7;10cm. The average dislocation density may be not more than 6.14&#xd7;10cm. The substrate may further include a main surface including a plane orientation of (&#x2212;201), (101) or (001). The substrate may be free from any twinned crystal.

&#x3b2;-Ga2O3-based single crystal substrate

A Schottky barrier diode includes an n-type semiconductor layer including a GaO-based compound semiconductor with n-type conductivity, and an electrode layer that is in Schottky-contact with the n-type semiconductor layer. A first semiconductor layer in Schottky-contact with the electrode layer and a second semiconductor layer having an electron carrier concentration higher than the first semiconductor layer are formed in the n-type semiconductor layer. The second semiconductor layer includes a &#x3b2;-GaOsubstrate including a main plane rotated by an angle not less than 50&#xb0; and not more than 90&#xb0; with respect to a (100) plane thereof.

A &#x3b2;-GaO-based single crystal substrate includes a &#x3b2;-GaO-based single crystal. The &#x3b2;-GaO-based single crystal includes a full width at half maximum of an x-ray rocking curve of less than 75 seconds.

A Schottky barrier diode is provided with: an n-type semiconductor layer including GaO-based compound semiconductors with n-type conductivity; and a Schottky electrode layer which is in Schottky-contact with the n-type semiconductor layer. An n-type semiconductor layer, which has a relatively low electron carrier concentration and is brought into Schottky-contact with the Schottky electrode layer, and an nsemiconductor layer, which has a higher electron carrier concentration than the n semiconductor layer, are formed in the n-type semiconductor layer.

Growing community of inventors

Tokyo, Japan

Masaru Takizawa