Tokyo Ohka Kogyo Co., Ltd.

Mitsubishi Rayon Company, Limited

Central Glass Company, Limited

Maruzen Petrochemical Company, Limited

Masaru Takeshita

Takeshi Iwai

Hideo Hada

Hiroaki Shimizu

Tsuyoshi Nakamura

Ryotaro Hayashi

Yasuhiro Yoshii

Jiro Yokoya

Hirokuni Saito

Yoshiyuki Utsumi

Tadayuki Fujiwara

Akifumi Ueda

Ryoji Watanabe

Hikaru Momose

Shogo Matsumaru

Atsushi Ootake

Masaaki Muroi

Kota Atsuchi

Yoshitaka Komuro

Takanori Yamagishi

Tomo Oikawa

Takahiro Nakamura

Syogo Matsumaru

Komei Hirahara

Masakazu Yamada

Kensuke Saisyo

Tomoyuki Hirano

Daiju Shiono

Takahiro Dazai

Akiya Kawaue

Takehiro Seshimo

Yuichi Suzuki

Kazufumi Sato

Satoshi Fujimura

Tasuku Matsumiya

Jun Iwashita

Taku Hirayama

Satoshi Yamada

Masahito Yahagi

Keita Ishiduka

Hideto Nito

Kensuke Matsuzawa

Kyoko Ohshita

Shinji Kumada

Hiroaki Tomida

Syo Abe

Yuji Ohgomori

Kazuyuki Shiotani

A resist composition containing a silicon-containing resin, an acid generator component which generates an acid upon exposure, and a photodecomposable base which controls diffusion of the acid generated from the acid generator component upon exposure, in which the silicon content proportion in the silicon-containing resin is in a range of 20% to 25% with respect to a total amount of all atoms constituting the silicon-containing resin.

Resist composition and method of forming resist pattern

A method of forming a resist pattern, including forming a resist film on a substrate using a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component; exposing the resist film; baking the exposed resist film, such that, at an exposed portion thereof, the base generated from the photo-base generator component upon the exposure and an acid provided to the resist film are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the acid provided to the resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion of the resist film has been dissolved and removed.

Method of forming resist pattern

A resist composition containing a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, dissolved in an organic solvent (S) which contains an alcohol-based solvent, wherein the base component (A) contains a copolymer (A1) that exhibits increased polarity under the action of acid, and the copolymer (A1) is a copolymer in which a structural unit (a2), which is derived from an acrylate ester in which the hydrogen atom bonded to the carbon atom on the &#x3b1;-position may be substituted with a substituent, and includes a lactone-containing cyclic group, is dispersed uniformly within the copolymer molecule.

A method of forming a resist pattern including: applying a first resist composition containing a base component that exhibits increased solubility in an alkali developing solution and a photobase generator component that generates a base upon exposure to a substrate to form a first resist film; conducting exposure; conducting baking; conducting an alkali development, thereby forming a negative-tone resist pattern; applying a second resist composition containing a second base component that exhibits increased solubility in an alkali developing solution, an acid generator component that generates acid upon exposure and an organic solvent that does not dissolve the negative-tone resist pattern to the substrate having the negative-tone resist pattern formed thereon to form a second resist film; conducting exposure; and conducting an alkali development, thereby forming a resist pattern.

There are provided a method of forming a resist pattern in which a resist pattern is formed on top of a substrate by using a chemically amplified resist composition and conducting patterning two or more times, the method being capable of reducing the extent of damage, caused by the second patterning, imposed upon the first resist pattern that is formed by the first patterning; as well as a resist composition that is useful for forming the first resist pattern in this method of forming a resist pattern. The method includes forming of a first resist pattern using a resist composition containing a thermal base generator as a chemically amplified resist composition during first patterning, and then conducting a hard bake for baking the first resist pattern under a bake condition such that a base is generated from the thermal base generator, prior to the second patterning.

Method of forming resist pattern and resist composition

A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, a nitrogen-containing organic compound (C) containing a compound (C1) represented by general formula (c1) shown below and an acid-generator component (B) which generates acid upon exposure (excluding the compound (C1)) (Rrepresents an alicyclic group of 5 or more carbon atoms which may have a substituent; X represents a divalent linking group; Y represents a linear, branched or cyclic alkylene group or an arylene group; Rf represents a hydrocarbon group containing a fluorine atom; and Mrepresents an organic cation). 

The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.

Resist polymer and resist composition

A positive resist composition including a resin component (A1) having a structural unit (a1) derived from an acrylate ester which may have an atom other than hydrogen or a group bonded to the carbon atom on the &#x3b1; position and containing an acid dissociable, dissolution inhibiting group, and a structural unit (a0) containing an &#x2014;SO&#x2014; containing cyclic group; a compound (C1) represented by general formula (c1) shown below; and an acid-generator component (B) which generates acid upon exposure, wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Yrepresents a divalent aliphatic hydrocarbon group; Rrepresents a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group; p represents an integer of 1 to 10; and Arepresents an organic cation. 

Positive resist composition and method of forming resist pattern

A resist composition for immersion exposure including: a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid; an acid-generator component (B) which generates acid upon exposure; and a fluorine-containing resin component (F); dissolved in an organic solvent (S), the fluorine-containing resin component (F) including a structural unit (f1) containing a fluorine atom, a structural unit (f2) containing a hydrophilic group-containing aliphatic hydrocarbon group, and a structural unit (f3) derived from an acrylate ester containing a tertiary alkyl group-containing group or an alkoxyalkyl group.

Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin

A compound represented by general formula (c1) (Rrepresents an alicyclic group of 5 or more carbon atoms which may have a substituent; X represents a divalent linking group; Y represents a linear, branched or cyclic alkylene group or an arylene group; Rf represents a hydrocarbon group containing a fluorine atom; and Mrepresents an organic cation or a metal cation). 

Compound

A positive resist composition including: a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid-generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), the organic solvent (S) including an alcohol-based organic solvent having a boiling point of at least 150&#xb0; C.; and a method of forming a resist pattern including: applying the positive resist composition on a substrate on which a first resist pattern is formed to form a second resist film; and subjecting the second resist film to selective exposure and alkali developing to form a resist pattern.

A positive resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure dissolved in an organic solvent (S), the base component (A) containing a polymeric compound (A1) including a structural unit (a0) derived from an acrylate ester having a cyclic group containing a sulfonyl group on the side chain thereof, a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group and a structural unit (a5) represented by general formula (a5-1) (Yrepresents an aliphatic hydrocarbon group; Z represents a monovalent organic group; a represents an integer of 1 to 3, and b represents an integer of 0 to 2, provided that a+b=1 to 3). 

Positive resist composition, method of forming resist pattern using the same, and polymeric compound

A positive resist composition including a resin component (A) which exhibits increased alkali solubility under action of acid and an acid-generator component (B) which generates acid upon exposure, wherein: R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; Yrepresents an aliphatic cyclic group; Z represents a tertiary alkyl group-containing group; a represents an integer of 1 to 3, and b represents an integer of 0 to 2, such that a+b=1 to 3; and each of c, d and e independently represents an integer of 0 to 3.

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Kawasaki, Japan

Masaru Takeshita