Kabushiki Kaisha Toshiba

Oki Semiconductor Co., Ltd.

Ge Medical Systems Global Technology Company, LLC

Oki Electric Industry Co., Ltd.

Ge Precision Healthcare LLC

Masaru Seto

Atsushi Tatemichi

Naohiro Yokoyama

Hideaki Tanaka

Yasuyuki Horii

Kazuya Shibasaki

Yasushi Sato

Satoru Arai

Kazuhiro Watanabe

Yuji Nakajima

Hiroaki Takahashi

Junya Maneki

Hiroaki Itakura

Yoshinori Kamikawa

Keisuke Oosawa

Masayuki Masukawa

An element isolation film is formed by filling an oxide in a trench formed in an element isolation region of a semiconductor substrate to thereby form an insulation film for element isolation. A method of forming the element isolation film includes a first step of depositing a material in a plasma state including oxygen and silicon on an inner surface of the trench while applying no bias voltage (or a relatively low voltage), and a second step of filling the material in a plasma state including oxygen and silicon in the trench while applying a bias voltage (or a relatively high voltage).

Method of forming element isolation film and nonvolatile semiconductor memory

The present invention provides a method of manufacturing a semiconductor device, which comprises steps of forming a plurality of wirings on a first insulating film formed on a semiconductor substrate so as to adjoin one another, forming a second insulating film on the first insulating film by a plasma CVD method and covering the wirings with the second insulating film in such a manner that air gaps are formed between the respective adjacent wirings, forming a third insulating film on the second insulating film by a high density plasma CVD method, and forming a fourth insulating film high in moisture resistance on the third insulating film.

Manufacturing method of semiconductor device and semiconductor device

There are provided a nonvolatile semiconductor memory of a structure in which electric signals from peripheral circuits are reliably transferred to control gates via word lines even if contact holes cannot be opened accurately above the word lines, and a method of fabricating the nonvolatile semiconductor memory. Plural word lines and plural bit lines are disposed on a semiconductor substrate, and there are memory cells at intersecting portions of the word lines and the bit lines. At contact portions of the word lines and metal wires of an upper layer, polysilicon regions, which include the contact portions, are formed beneath a polysilicon forming the word lines, as an etching stop layer at a time of forming contacts.

Nonvolatile semiconductor memory and method of fabrication thereof

Separate first and second floating gates for attracting carriers transferring in a transistor structure having a channel region and first and second main electrode regions into charge storage films therebelow are formed so as to largely face a control gate. The control gate between the separate first and second floating gates faces to the channel region via thin interlayer insulating layer. Therefore, a semiconductor device according to the present invention can inject electrons the charge storage film without causing writing errors in a writing operation, and therefore can increase in reliability thereof, control a writing voltage, prevent loss of the electrons stored in the charge storage film, and reliably apply a bias voltage to a channel region.

Method of manufacturing non-volatile memory device using multiple element isolation regions and perpendicular extensive device regions

A semiconductor memory device includes: a laminated body which has a floating-gate-forming groove and includes a semiconductor support layer, an impurity diffusion layer, an ion-implantation-damage protection film, and an interlayer insulating film; a floating-gate-insulating film; a floating gate disposed on the floating-gate-insulating film so as to be buried in the floating-gate-forming groove; a control-gate-insulating film disposed on a surface area of the floating gate; and a control gate disposed on the control-gate-insulating film above the floating gate, wherein the floating-gate-insulating film contacts with the semiconductor support layer at the bottom of the floating-gate-forming groove, the floating-gate-insulating film contacts with the impurity diffusion layer, the ion-implantation-damage protection film, and the interlayer insulating film at the side wall of the floating-gate-forming groove.

Semiconductor memory device and method of manufacturing the same

A method to check a tissue located in the vicinity of an object of examination when a treatment instrument such as a puncture needle is inserted into a subject, wherein a first planar image construction block included in an image construction unit reconstructs in real time two-dimensional planar images, which represent subject's slice planes, on the basis of projection data. A stereoscopic image construction block included in the image construction unit constructs three-dimensional stereoscopic images, which represent the subject's slice planes, on the basis of projection data. The planar images constructed by the first planar image construction block are displayed in real time on the screen of a display unit, and the stereoscopic images constructed by the stereoscopic image construction block are displayed on the screen of the display unit while being juxtaposed with the first planar images constructed by the first planar image construction block.

Radiography system

An X-ray CT apparatus includes a host and a scanner that executes a scan based on a scan program communicated from the host by means of communicating means. The X-ray CT apparatus also includes a communicating means which collectively communicate the calculated values of X-ray applied amounts at every scan positions or original data for the calculation of the amount of X-ray application even with respect to unprogrammed scan positions. Each of the calculated values of X-ray applied amounts corresponds to a tube current value of an X-ray tube. The original data for the calculation of the amount of X-ray application corresponds to X-ray penetrated image data of a subject.

Scan program communication method and X-ray CT apparatus

A radiation tomography system includes a radiation source and a radiation detector opposed to the radiation source with a subject between them. The radiation tomography system further includes a scanner that scans a subject by moving the radiation source and radiation detector while rotating them about the subject; a calculator that calculates a control value with which an exposure of a radiation emanating from the radiation source is controlled; and a display on which at least one of calculated control values associated with positions in the direction of rotation of the scanner and control values associated with positions in the direction of a body axis linking the subject's head and the subject's tiptoe is displayed in relation to the respective pieces of positional information on the subject.

Radiation tomography system and tomography method

The portable electronic apparatus has a box-like casing having a peripheral wall, and a pack receptacle defined within the casing. The pack receptacle has an opening portion opened in the peripheral wall. A packaged functional component is stored in the pack receptacle, such that the functional component can be detached therefrom through the opening portion. The pack receptacle of the casing is provided with a locking member for holding the functional component. The locking member is movable by manual operation between a locked position where the locking member is hooked on the functional component and a lock-released position where the locking member leaves the functional component. The pack receptacle is provided with a spring for energizing the functional component in the direction in which the functional component is pushed out through the opening portion. The opening portion of the casing and the locking member are covered with a detachable cover.

Portable electronic apparatus having a battery pack receptacle

A method for manufacturing read-only memory. In each memory cell on a wafer, a gate electrode,is formed on a silicon substrate,with an intermediary of a gate oxide film,, and an oxide film,is formed to cover the surface of the silicon substrate. After an inter-layer dielectric film,is grown on the oxide film,by LPCVD, this inter-layer dielectric film,is put to rapid thermal processing at 700&deg; C. to 800&deg; C. for about 60 seconds to remove the water content of the inter-layer dielectric film,. This eliminates chances of insulation deterioration when semi-finished wafers are put into long-term storage. After the steps just before data writing have been finished, the wafers can be put into long-term storage, so that time from decision of data to write until product completion can be reduced.

Method for manufacturing semiconductor memory

An electronic apparatus comprises a receptacle for removably receiving a functional component, and an opening portion for insertion/removal of the functional component into/from the receptacle, and a cover attached to the housing to cover the opening portion. The cover is movable between a first position where the cover covers the opening portion and a second position where the cover is-shifted away from the opening portion. The cover is coupled to the housing by means of a flexible coupling member.

Electronic apparatus with cover for covering detachable functional component

Portable apparatus having ejector for ejecting a unit stored in the

A printed circuit board, a heat radiating shield plate formed of a metallic plate, a printed circuit board and a shield plate are arranged in a base section of a apparatus body in a stacked state. Studs made of a metal projects from the heat radiating shield plate. Both ends of each of the studs come in contact with ground areas of the printed circuit boards and are electrically connected to these ground areas. A CPU mounted on one of the printed circuit boards comes in contact with the heat radiating shield plate through a cool sheet and is thermally connected to the heat radiating shield plate.

Electronic apparatus

An electronic apparatus has a housing with a peripheral wall. The peripheral wall has a lock hole in which a lock device is detachably engaged. A receptacle is formed in the housing. The receptacle has an insertion hole formed in the peripheral wall of the housing. The receptacle removably receives a functional component through the insertion hole. A lock member is disposed within the housing. The lock member is movable between a locked position where the lock member is advanced to the receptacle and irremovably locks the functional component in the receptacle and a lock release position where the lock member retreats from the receptacle and unlocks the functional component. The lock member has a first engaging hole which is continuous with the lock hole when the lock member is moved to the locked position and a second engaging hole which is continuous with the lock hole when the lock member is moved to the lock release position. The lock device is detachably engaged in one of the first and second engaging holes through the lock hole.

Electronic apparatus having a locking device for preventing theft of

A card insertion hole is formed in a side wall of a base portion of an apparatus body. A card storage portion for storing a PC card is provided in the base portion. The card storage portion has a case to which a PC card is inserted, and an end opening portion of the case is opposed to the card insertion hole with a predetermined distance therebetween. A frame-like cover member is arranged between the opening portion and the card insertion hole, thereby covering the gap between the opening portion and the card insertion hole. A card insertion path for communicating the card insertion hole with the opening portion of the case is defined in the cover member. A lid member for opening/closing the cover insertion hole is provided at the cover member.

Growing community of inventors

Tokyo, Japan

Masaru Seto