Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Shin-etsu Chemical Co., Ltd.

Central Glass Company, Limited

Other

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Co., Ltd.

Wako Pure Chemical Industries, Inc.

Matsushita Electronic Industrial Co., Ltd

Atsushita Electric Industrial Co., Ltd.

Pd Service Corporation

Masaru Sasago

Masayuki Endo

Shinji Kishimura

Jun Hatakeyama

Yuji Harada

Kazuhiko Maeda

Yoshio Kawai

Hideo Nakagawa

Michitaka Ootani

Haruhiko Komoriya

Fujio Yagihashi

Yoshitaka Hamada

Satoru Miyazawa

Mitsuru Ueda

Kazufumi Ogawa

Kentaro Tsutsumi

Akiko Katsuyama

Tsutomu Ogihara

Jun Watanabe

Takeshi Asano

Masamitsu Shirai

Hirokazu Imori

Toshiaki Fukuhara

Motoaki Iwabuchi

Masahiro Tsunooka

Takeshi Ishihara

Kazuhiro Yamanaka

Takahiro Matsuo

Yoshihiko Hirai

Kazuhiro Yamashita

Tomoyasu Murakami

Nobuyuki Matsuzawa

Akio Misaka

Yoshiyuki Tani

Tsuyohiko Fujigaya

Hideyuki Arai

Jun'ichi Naka

Masayuki Endou

Yoshihiro Mori

Noboru Nomura

Mutsuo Nakashima

Kazuhiko Hashimoto

Nobuo Aoi

Takeshi Kawabata

Fumiyoshi Urano

Kenichi Takeyama

Takashi Yui

Tsuneaki Maesawa

Toshio Fujii

Yasunori Morinaga

Taichi Koizumi

Shigeo Irie

Yoshimasa Yoshioka

Tokushige Hisatsugu

Tadami Shimizu

Hiroshi Sakaue

Takeshi Anaso

Masahir Tsunooka

Ken Ishihara

To provide a fused hetero 5-membered ring molecule having further sufficiently high hole mobility. Disclosed is a fused hetero 5-membered ring molecule having, in one molecule, eight aromatic rings including three or five hetero 5-membered rings, and the eight aromatic rings having one or two naphthalene structures. The three or five hetero 5-membered rings are each independently selected from the group consisting of a thiophene ring, a selenophene ring, and a furan ring.

Fused hetero 5-membered ring molecule, p-type semiconductor film and electronic device

To provide a fused thiophene molecule having further sufficiently high hole mobility. Disclosed is a fused thiophene molecule that has seven aromatic rings containing three thiophene rings in one molecule and in which the seven aromatic rings have one or two naphthalene structures. And, semiconductor devices including a layer using the fused thiophene molecule are disclosed.

Fused thiophene molecule and p-type semiconductor film and electronic device

Provided is a heterofullerene where n number (where n is a positive even number) of carbon atoms constituting a fullerene are substituted by n number of boron atoms or n number of nitrogen atoms.

Heterofullerene and n-type semiconductor film using same, and electronic device

A p-type semiconductor film including heterofullerene having a further sufficiently high hole mobility is provided. The p-type semiconductor film contains heterofullerene in which n+r number (where n and r are both positive odd numbers) of carbon atoms constituting a fullerene are substituted by n number of boron atom or atoms and r number of nitrogen atom or atoms.

P-type semiconductor film containing heterofullerene, and electronic device

A lamination structure includes a first semiconductor chip and a second semiconductor chip stacked via a bonding section so that a rear surface of the first semiconductor chip faces the main surface of the second semiconductor chip. At least a part of a side surface of the first semiconductor chip are covered with a first resin, a distribution layer is formed on the plane formed of the main surface of the first semiconductor chip and a surface of the first resin. At least part of electrodes existing in the main surface of the second semiconductor chip is electrically connected to at least part of first external electrodes formed on the distribution layer via the penetration electrodes that penetrate the first semiconductor chip.

Semiconductor device having stacked chips, a re-distribution layer, and penetration electrodes

An opening width of a main pattern is a width with which a transcription pattern is formed on a target member to be exposed by transmitted exposure light, and is a dimension of 0.8&#xd7;(&#x3bb;/NA)&#xd7;M or less (where &#x3bb; is a wavelength of the exposure light, and NA and M are a numerical aperture and a reduction ratio of a reduced projection optical system of an exposure apparatus). Each of a first auxiliary pattern adjacent to the main pattern and a second auxiliary pattern located outside the first auxiliary pattern to be adjacent thereto has a width with which a transcription pattern is not formed by the exposure light and generates diffracted light. A first distance between respective centers of the main pattern and the first auxiliary pattern is greater than a second distance between respective centers of the first auxiliary pattern and the second auxiliary pattern.

Photo mask and method for forming pattern using the same

A photomask includes a translucent substrate; and a light-shielding film formed on the translucent substrate, and including a light-shielding portion and an opening which serves as a translucent region. A plurality of recesses are formed in a region of the translucent substrate, which is exposed from the opening. Widths of the plurality of recesses gradually increase with an increase in distances from a focal point so that light transmitted by the plurality of recesses is focused in a predetermined position.

Photomask, and pattern formation method and exposure apparatus using the photomask

After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.

Pattern formation method

An exposure system includes a cleaning unit for cleaning a surface of a resist film formed on a wafer with a cleaning fluid and an exposure unit for performing pattern exposure with an immersion liquid provided between the resist film and a projection lens.

Exposure system and pattern formation method

After forming a resist film made from a chemically amplified resist material pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that includes triphenylsulfonium nonaflate, that is, an acid generator, and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.

A resist film of a positive type containing a photoacid generator is formed on a substrate. Then, pattern exposure is performed by selectively irradiating the resist film with exposure light. Thereafter, first heating is performed on the resist film subjected to the pattern exposure. After the heating, first development is performed on the resist film, thereby forming a first resist pattern. Subsequently, the first resist pattern is exposed to a solution containing a thermal acid generator and containing neither polymer nor a cross-linking agent. After the exposure, second heating is performed on the first resist pattern. Second development is then performed on the first resist pattern, thereby forming a second resist pattern made of the first resist pattern having a reduced size.

Pattern forming method

After forming an underlying layer film and an intermediate layer film are formed over a substrate, a resist pattern formed by first pattern exposure using a first resist film and second pattern exposure using a second resist film is transferred onto the intermediate layer film. Furthermore, the underlying layer film is etched using the intermediate layer pattern as a mask, thereby obtaining an underlying layer film pattern. The underlying layer film includes as an adduct a fluorine-based surfactant or inorganic nano particles and is provided with a resistance against oxygen-based plasma.

A first resist film is formed on a substrate, and first pattern exposure is performed such that the first resist film is irradiated with exposure light through a first mask. Then, the first resist film is developed, thereby forming a first resist pattern out of the first resist film. Subsequently, a nano-carbon material is attached to the surface of the first resist pattern, and then a second resist film is formed on the substrate including the first resist pattern. Thereafter, second pattern exposure is performed such that the second resist film is irradiated with exposure light through a second mask. Then, the second resist film is developed, thereby forming a second resist pattern out of the second resist film.

After formation of an underlayer film and an intermediate layer film, a resist pattern formed by the first pattern exposure with the first resist film and the second pattern exposure with the second resist film is transferred to the intermediate layer film. The underlayer film is etched using an intermediate layer pattern as a mask to form an underlayer film pattern. Herein, the first and second resist films are chemically amplified resist films. The second resist film contains a greater amount of additive which improves the sensitivity of the resist or which improves the alkaline solubility of resist exposed part.

Growing community of inventors

Osaka, Japan

Masaru Sasago