Jx Nippon Mining Metals Corporation

Nitto-Denko Corporation

Nikko Materials Company, Limited

Masaru Sakamoto

Yousuke Endo

Tomoya Tamura

Hideo Takami

Ichiro Suehiro

Hiroyoshi Yamamoto

Kouji Kitano

The present disclosure relates to a plastic optical fiber (POF) core diameter measuring method and a POF core diameter measuring apparatus, and a POF defect detecting method, and a POF defect detecting apparatus used therefor. Light irradiation mechanisms are provided for irradiating a side of a POF with light, with imaging mechanisms provided on the opposite side of the POF from the light irradiation mechanisms; and a data processing mechanism for processing image data on the POF acquired from the imaging mechanisms to calculate the core diameter of the POF. The ratio (D/W) of the shortest distance D to a light emission width W is in the range of 0.9 to 1.3 where W is the light emission width of the light irradiation mechanisms and D is the shortest distance between a light emission position of the light irradiation mechanisms and the side of the POF.

Plastic optical fiber core diameter measuring method, plastic optical fiber core diameter measuring apparatus used therefor, plastic optical fiber defect detecting method, and plastic optical fiber defect detecting apparatus used therefor

A Cu&#x2014;Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the sintered-compact sputtering target is characterized in that the relative density is 80% or higher, and the compositional deviation of the Ga concentration is within &#xb1;0.5 at % of the intended composition. A method of producing a Cu&#x2014;Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the method thereof is characterized in that Cu and Ga raw materials are melted and cooled/pulverized to produce a Cu&#x2014;Ga alloy raw material powder, and the obtained material powder is further hot-pressed with a retention temperature being between the melting point of the mixed raw material powder and a temperature 15&#xb0; C. lower than the melting point and with a pressure of 400 kgf/cmor more applied to the sintered mixed raw material powder. Provided are a sputtering target having very low compositional deviation and high density; a method of producing the target; a light-absorbing layer having a Cu&#x2014;Ga based alloy film; and a CIGS solar cell including the light-absorbing layer.

Cu&#x2014;Ga target, method of producing same, light-absorbing layer formed from Cu&#x2014;Ga based alloy film, and CIGS system solar cell having the light-absorbing layer

An indium sputtering target with a short time to attain a stable film deposition rate once sputtering has begun is provided. An indium sputtering target having a surface to be sputtered with an arithmetic average roughness Ra of from 5 &#x3bc;m to 70 &#x3bc;m prior to sputtering.

Indium sputtering target and method for manufacturing same

A quaternary alloy sputtering target composed of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein a composition ratio of the respective elements is represented by a formula of CuInGaSe(in the formula, 0.84&#x2266;x&#x2266;0.98, 0&#x3c;y&#x2266;0.5, a=(1/2)x+3/2), and a structure observed via EPMA is configured only from a Cu(In, Ga)Sephase without any heterogenous phase of CuSe or Cu(In, Ga)Se. Provided is a CIGS quaternary alloy sputtering target which is subject to hardly any abnormal discharge even when sputtered for a long period, which is free of any heterogenous phase of CuSe or Cu(In, Ga)Sewhich causes the deterioration in the conversion efficiency of the film after being sputter-deposited, and which can produce a film having superior in-plane uniformity. Additionally provided is a CIGS quaternary alloy sputtering target having a predetermined bulk resistance and a high density.

Cu&#x2014;In&#x2014;Ga&#x2014;Se quaternary alloy sputtering target

The present invention provides an indium target and manufacturing method thereof, where deposition rate is high, initial discharge voltage is low, and deposition rate and discharge voltage, from the start of sputtering to the end of sputtering, are stable. In the indium target, an aspect ratio (length of longer direction/length of shorter direction) of crystal particle, observed from cross-section direction of the target, is 2.0 or less.

Indium target and manufacturing method thereof

Provided by the present invention is a laminated structure with good use efficiency, in which diffusion of tin from an indium-tin solder material to an indium target is favorably suppressed, and a method for producing the same. The laminated structure has a backing plate, an indium-tin solder material, and an indium target laminated in this order, and the concentration of tin in the 2.5 to 3.0 mm thickness range of the indium target from the indium-tin solder material side surface is 5 wtppm or less.

Laminated structure and method for producing the same

There is provided a copper clad laminate which makes laser beam drilling extremely easy and is suitable for forming an interlayer connection microhole by improving a surface of its copper foil, which is to be used as the surface which a laser beam enters, in the production of printed circuit boards. Specifically, the copper clad laminate is such that it includes electrodeposited copper foil for use in the laser beam drilling and is characterized in that the matte side of the above electrodeposited copper foil is used as the surface which the laser beam enters.

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Ibaraki, Japan

Masaru Sakamoto