Fuji Electric Co., Ltd.

Fuji Electric Systems Co. Ltd.

Fuji Electric Holdings Co., Ltd.

Masaru Saito

Gen Tada

Naoto Fujishima

Akio Kitamura

Osamu Sasaki

Masaharu Yamaji

Hitoshi Sumida

Kazuo Matsuzaki

Taichi Karino

Koji Sonobe

Masahiro Sasaki

Akira Nakamori

Takahiro Mori

Wataru Tomita

A semiconductor device has a configuration wherein a resistor that restricts overvoltage is inserted between an input terminal and the drain of JFETs, and the resistor is disposed on the JFETs. Also, the resistor is formed contiguously and integrally with a spiral form high breakdown voltage high resistance element that configures a resistive voltage divider circuit.

Semiconductor device, switching power supply control IC, and switching power supply device

Provided is a resistance element, including: a semiconductor substrate; a first insulating film stacked on the semiconductor substrate; a resistance layer selectively stacked on the first insulating film; a first auxiliary film separated from the resistance layer; a second auxiliary film separated from the resistance layer in a direction different from that of the first auxiliary film; a second insulating film stacked on the first insulating film to cover the resistance layer, and the first auxiliary film and the second auxiliary film; a first electrode connected to the resistance layer and stacked on the second insulating film disposed on an upper side of the first auxiliary film; and a second electrode connected to the resistance layer by being separated from the first electrode and stacked on the second insulating film on the upper side of the second auxiliary film.

Resistance element and manufacturing method of resistance element

A dummy element includes: a semiconductor substrate; a lower insulating film deposited on the semiconductor substrate; a first resistive layer deposited on the lower insulating film; an interlayer insulating film covering the first resistive layer; a first pad-forming electrode deposited on the interlayer insulating film so as to be connected to the first resistive layer, and including an extending portion to be in Schottky contact with the semiconductor substrate; a relay wire connected to the first resistive layer and connected to the semiconductor substrate with an ohmic contact; and a counter electrode allocated under the semiconductor substrate, the dummy element simulating a defective state in the lower insulating film and the interlayer insulating film immediately under the first pad-forming electrode included in a corresponding resistive element as a target to be examined.

Dummy element and method of examining defect of resistive element

A resistive element includes: a semiconductor substrate; a first insulating film deposited on the semiconductor substrate; a resistive layer deposited on the first insulating film; a second insulating film deposited to cover the first insulating film and the resistive layer; a first electrode deposited on the second insulating film and electrically connected to the resistive layer; a relay wire deposited on the second insulating film without being in contact with the first electrode, and including a resistive-layer connection terminal electrically connected to the resistive layer and a substrate connection terminal connected to the semiconductor substrate with an ohmic contact; and a second electrode deposited on a bottom side of the semiconductor substrate, wherein a resistor is provided between the first electrode and the second electrode.

Resistive element and method of manufacturing the resistive element

To provide a semiconductor integrated device capable of a gate screening test with no need for any additional circuit and without adding any gate screening terminal. The semiconductor integrated device includes a gate drive unit configured to drive the gate of a voltage controlled semiconductor element and a regulator configured to supply a gate drive voltage to the gate drive unit. The regulator includes an external connection terminal capable of receiving a gate screening voltage for the voltage controlled semiconductor element in a gate screening test.

Semiconductor integrated device and gate screening test method of the same

A resistive element includes: a resistive layer having a rectangular shape defined by a resistance length direction and a resistance width direction orthogonal to the resistance length direction; a first outer contact and a first inner contact allocated on one side of the resistive layer defined in the resistive length direction; and a second outer contact and a second inner contact allocated on another side of the resistive layer defined in the resistive length direction, wherein, as viewed in the resistance length direction, the first inner contact is shifted from the second inner contact, the first inner contact is at least partly opposed to the second outer contact, and the second inner contact is at least partly opposed to the first outer contact.

Resistive element

In a constant voltage clamping circuit, a p-type anode region and an n-type pickup region are provided separated from each other in an n-type well region. In the p-type anode region, a p-type low-concentration anode region is provided. In the p-type low-concentration anode region, an n-type cathode region is provided. A first Zener diode of a highest potential of the constant voltage clamping circuit is formed by a pn junction of the p-type anode region, the p-type low-concentration anode region and the n-type cathode region. An n-type pickup contact region in the n-type pickup region is arranged at a position near the n-type cathode region and separated farther the n-type cathode region, from p-type anode contact region. The n-type pickup contact region and the p-type anode contact region are short-circuited.

Semiconductor device and semiconductor circuit device

Aspects of the invention can include a semiconductor device, control IC for switching power supply and switching power supply unit, which allow input voltage detecting function to be realized without resistor-voltage dividing circuit. An npn-type element consisting of p-type region, collector region and emitter region is included inside of drain region of starting element. On a first interlayer insulating film, aspects of the invention can provide collector electrode wiring of npn-type element, emitter-drain electrode wiring serving as both emitter electrode wiring of npn-type electrode and drain electrode wiring of starting element, source electrode wiring of starting element, and gate electrode wiring of starting element. A first metal wiring can serve both as input terminal of starting element and input terminal of npn-type element is connected to collector electrode wiring. The npn-type element can function as input voltage detecting means for detecting input voltage drop applied to the first wiring.

Semiconductor device, control IC for switching power supply, and switching power supply unit

A semiconductor device includes a first conductive type first main electrode region, a first conductive type drift region which makes contact with the first main electrode region, a first conductive type second main electrode region which makes contact with the drift region, a second conductive type well region which is provided in a part of a surface layer portion of the drift region and to which a reference potential is applied, and a first conductive type potential extracting region which is provided in a surface layer portion of the well region and to which the reference potential is applied. The well region serves as a base region which controls a current flowing between the potential extracting region and the drift region. Thus, it is possible to provide a novel semiconductor device which is high in reliability while the increase of the chip size can be suppressed.

Semiconductor device

A semiconductor substrate of a first conductivity type having a first region of a second conductivity type formed in a surface thereof; an insulating film on the semiconductor substrate; a primary wiring line connected to the first region and configured to receive a voltage from outside; a plurality of diodes connected in series on the insulating film and having a spiral shape generally centering around the first region in a plan view, the diodes having one end of the series thereof connected to the primary wiring line and serving as a cathode; a resistor voltage divider having one end connected to another end of the series of diodes; a first connection wiring line connected to another end of the resistor voltage divider; and a second connection wiring line connected to a midpoint between the another end of the series of diodes and the another end of the resistor voltage divider.

Semiconductor device with serially and spirally connected diodes

A semiconductor device includes: a semiconductor substrate; and a thin film resistor formed over an upper surface of the semiconductor substrate, the thin film resistor including first thin film resistor units and second thin film resistor units alternately connected in series, each of the first thin film resistor units having an elongated main portion and end portions that are connected to the elongated main portion, the end portions each forming a U-shape together with the elongated main portion in a plan view, and respectively overlapping with two of the second thin film resistor units that are adjacent to and connected to the first thin film resistor unit in series.

A switching power supply has a start-up circuit that includes a field effect transistor (JFET), which has a gate region (a p-type well region) formed in a surface layer of a p-type substrate and a drift region (a first n-type well region). A plurality of source regions (second n-type well regions) are formed circumferentially around the drift region. A drain region (a third n-type well region) is formed centrally of the source region. The drain region and the source regions can be formed at the same time. A metal wiring of the source electrode wiring connected to source regions is divided into at least two groups to form at least two junction field effect transistors.

Junction field effect transistor, integrated circuit for switching power supply, and switching power supply

A semiconductor device incorporates a resistor on a structure that uses diffusion layers for sustaining the breakdown voltage thereof to realizes a very resistive element that exhibits a high breakdown voltage and high electrical resistance, includes a spiral very resistive element buried in an interlayer insulator film. A first end of the very resistive element is connected to a drain electrode wiring and the second end of the very resistive element is grounded. An intermediate point of the very resistive element is connected to ae voltage comparator of a control IC. The semiconductor device according to the invention facilitates reducing the components parts costs, assembly costs and size of a switching power supply that includes a very resistive element.

Growing community of inventors

Matsumoto, Japan

Masaru Saito