Tdk Corporation

Masaru Nanao

Masahito Furukawa

Kenta Ishii

Takeo Tsukada

Hideya Sakamoto

Tomohisa Azuma

Masahiro Kitajima

Satoshi Sasaki

Takao Noguchi

Nobuo Kobayashi

Masakazu Hirose

Hitoshi Sakuma

Satoshi Ozawa

Yasuharu Miyauchi

Etsuo Mitsuhashi

Tomofumi Kuroda

Shogo Murosawa

Masatada Yodogawa

Junichi Yamazaki

Tamotsu Ishiyama

Mitsunao Homma

Kentaro Sawamura

Nobuyuki Miki

Norimasa Sakamoto

Tomohiro Sogabe

Tatsuji Sano

Masayoshi Inoue

Keisuke Itakura

Yoshiko Gokita

Noriaki Hirano

Kumiko Iezumi

Kouhei Ohhashi

Yumiko Kozasa

Naoyoshi Satou

Shougo Murosawa

A thin film laminate comprises a metal layer consisting of a metal, and a thin film laminated on the surface of the metal layer, wherein a first direction is defined as one direction parallel to the surface of the metal layer, and a second direction is defined as one direction parallel to the surface of the metal layer and crossing the first direction; and the metal layer contains a plurality of first metal grains consisting of the metal and extending in the first direction on the surface of the metal layer, and a plurality of second metal grains consisting of the metal and extending in the second direction on the surface of the metal layer.

Thin film laminate, thin film device and multilayer substrate

A piezoelectric thin film-stacked body is provided. A piezoelectric thin film-stacked body has a first electrode layer, a first intermediate layer stacked on the first electrode layer, a second intermediate layer stacked on the first intermediate layer, and a piezoelectric thin film stacked on the second intermediate layer, the first intermediate layer includes K, Na, and Nb, the second intermediate layer is a layer causing stress in a compression direction in the piezoelectric thin film, and the piezoelectric thin film includes (K,Na)NbO.

Piezoelectric thin film-stacked body, piezoelectric thin film substrate, piezoelectric thin film device, piezoelectric actuator, piezoelectric sensor, head assembly, head stack assembly, hard disk drive, printer head, and ink-jet printer device

A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABOas a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least Nb (niobium), the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains; and the average particle diameter of the crystal grains is larger than 3 &#x3bc;m and not larger than 30 &#x3bc;m.

Piezoelectric ceramic sputtering target, lead-free piezoelectric thin film and piezoelectric thin film element using the same

A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABOas a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least one selected from the group consisting of Nb (niobium), Ta (tantalum) and Zr (zirconium) with Nb (niobium) as a necessity, the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains and grain boundaries existing among the crystal grains, and in the grain boundary, the molar ratio of at least one of Nb (niobium), Ta (tantalum), and Zr (zirconium) in the B components is higher than the molar ratio in the interior of the crystal grains by 30% or more.

The present invention aims to provide a piezoelectric composition containing a composition represented by formula (5) as the main component, wherein the composition represented by formula (5) contains a first perovskite-type oxide represented by formula (1), a second perovskite-type oxide represented by formula (2), a tungsten bronze-type oxide represented by formula (3) and a third perovskite-type oxide represented by formula (4), (KNaLi)(NbTa)O(1), SrZrO(2), Ba(NbTa)O(3), (BiNa)TiOand/or (BiK)TiO(4), (1&#x2212;m&#x2212;n&#x2212;p)A+mB+nC+pD (5); in formula (1), 0.20&#x2264;x&#x2264;0.80, 0.02&#x2264;y&#x2264;0.10, 0.01&#x2264;z&#x2264;0.30 and 0.800&#x2264;q&#x2264;1.050; in formula (3), 0.01&#x2264;w&#x2264;0.30; and in formula (5), A represents the composite oxide represented by formula (1), B represents the composite oxide represented by formula (2), C represents the composite oxide represented by formula (3), D represents the composite oxide represented by formula (4), and 0.04&#x2264;m&#x2264;0.07, 0&#x2264;n&#x2264;0.010 and 0.001&#x2264;p&#x2264;0.020.

Piezoelectric composition, piezoelectric element and sputtering target

A piezoelectric element is provided with an element body, which has a pair of principal faces opposed to each other and an end face extending in a direction in which the pair of principal faces are opposed to each other, so as to connect the pair of principal faces, and which is comprised of a piezoelectric ceramic material; a pair of electrodes arranged respectively on the pair of principal faces; and a resin covering an entire area of the end face and arranged so as to make contact with the pair of electrodes. The resin has two edges in the aforementioned direction projecting outward in the aforementioned direction from the respective electrodes.

Piezoelectric element and method for manufacturing piezoelectric element

Provided is a piezoelectric ceramic composition capable of being sintered at low temperatures and in a low-oxygen reductive atmosphere and capable of attaining a sufficient displacement even at high voltages of 1 kV/mm or more. The piezoelectric ceramic composition includes: a composite oxide, as a main constituent thereof, represented by the following composition formula; Cu and/or Ag, each as a first additive, Cu being included in a content &#x3b1;, in terms of CuO, falling within a range 0&#x3c;&#x3b1;&#x2266;0.5% by mass and Ag being included in a content &#x3b2;, in terms of AgO, falling within a range 0&#x3c;&#x3b2;&#x2266;0.4% by mass, in relation to the main constituent; wherein: composition formula: Pb[(ZnNb)TiZr]O, where 0.96&#x2266;a&#x2266;1.03, 0.005&#x2266;x&#x3c;0.05, 0.42&#x2266;y&#x2266;0.53, 0.45&#x2266;z&#x2266;0.56, and x+y+z=1.

Piezoelectric ceramic composition and laminated piezoelectric element

Provided is a piezoelectric ceramic with a wider operating temperature range capable of obtaining a larger amount of displacement and being easily sintered, as well as being superior in terms of ultra-low emission, environmental friendliness and ecology. A piezoelectric substratecomprises a composition including a perovskite-type oxide (NaKLiAg)(NbTa)Oand a tungsten bronze-type oxide M(NbTa)O(M is an element of Group 2 in the long form of the periodic table of the elements). The values of x, y and z are preferably within a range of 0.1&#x2266;x&#x2266;0.9, 0&#x2266;y&#x2266;0.2, and 0&#x2266;z&#x2266;0.05, respectively. The content of the tungsten bronze-type oxide is preferably 5.3 mol % or less. Thereby, a higher Curie temperature and a larger amount of displacement can be obtained, and sintering can be more easily carried out.

Piezoelectric porcelain and method for preparation thereof

A piezoelectric ceramic and a piezoelectric device capable of being fired at a low temperature and improving piezoelectric properties are provided. The piezoelectric ceramic and the piezoelectric device includes Pb[(ZnNb)TiZr]O(where 0.94&#x2266;a&#x2266;1.02, 1&#x3c;b&#x2266;3, x+y+z=1, 0.05&#x2266;x&#x3c;0.125, 0.275&#x3c;y&#x2266;0.5, 0.375&#x3c;z&#x2266;0.6) or (PbMe)[(ZnNb)TiZr]O(where 0.96&#x2266;e&#x2266;1.03, 0.01&#x2266;f&#x2266;0.1, 1&#x3c;g&#x2266;3, u+v+w=1, 0.05&#x2266;u&#x3c;0.125, 0.275&#x3c;v&#x2266;0.5, 0.375&#x3c;w&#x2266;0.6, and Me indicates Sr, Ba or Ca). When an excessive amount of Zn is included, the firing temperature can be lower, and the piezoelectric properties can be improved.

Piezoelectric ceramic and piezoelectric device

The invention provides a piezoelectric ceramic material comprising a Bi TiNbO crystal and/or an MBi Nb O crystal which are each a bismuth layer compound, where M represents at least one element selected from Sr, Ba and Ca. The ceramic material contains Bi, Ti, M and Nb as main component elements. The molar ratio as oxides of the main component elements is given by (Bi M ) (Nb Ti provided that 0<x, y&lE;0.8 and 0.95&lE;z&lE;1.05. When the molar ratio of Ba/(M&plus;Bi) is given by x /3 and the molar ratio of Ca/(M&plus;Bi) is given by x /3, it is required that 0&lE;x &lE;0.5 and 0&lE;x <0.4. This piezoelectric ceramic material, free from any lead whatsoever, has a sufficiently high Curie point, and exhibits ever more improved piezoelectric properties.

Piezoelectric ceramic material

A piezoelectric ceramic composition which contains a main component represented by the general formula of x(Pb.sub.2 Me.sub.2 O.sub.7).sub.1/2 .multidot.(1-x)[Pb(Zr.sub.1-y Ti.sub.y)O.sub.3 ] in which x and y are numerical values satisfying the relations 0.01.ltoreq.x.ltoreq.0.05 and 0.40.ltoreq.y.ltoreq.0.55, and Me is at least one of Sb, Nb and Ta. In the component, 0.1 to 0.8% by weight of Cr calculated in terms of chrome oxide and 0.01 to 0.1% by weight of Si calculated in terms of silicon oxide with respect to the weight of 1 mol of the main component are added as subsidiary components.

Piezoelectric ceramic composition

The invention provides a rapid temperature rise heater element comprising an exothermic section (1) and a lead section (2), the exothermic section (1) comprising an exothermic section conductor of ceramic material which includes at least four stacked exothermic section conductive layers (1a) with an exothermic section insulating layer (1c) of ceramic material interposed therebetween and connections (1b) each for connecting adjacent exothermic section conductive layers (1a). The lead section (2) includes first and second lead section conductive layers (2a and 2b) electrically connected to the uppermost and lowermost exothermic section conductive layers (1a), respectively, the first and second lead section conductive layers (2a and 2b) being stacked with a lead section insulating layer (2c) of ceramic material interposed therebetween. A durable rapid temperature rise heater element can be efficiently fabricated at low cost while maintaining heater performance.

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Tokyo, Japan

Masaru Nanao