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Tokyo Electron Limited

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Casio Computer Co., Ltd.

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Eagle Industry Co., Ltd.

Osaka Gas Company Limited

Gc Corporation

Masaru Nakamura

Yusuke Nagai

Norihide Sugiyama

Satoshi Kobayashi

Ko Aosaki

Masashi Matsuo

Masao Unoki

Shoji Tanaka

Kazuya Oharu

Atsushi Watakabe

Yosuke Watanabe

Isamu Kaneko

Shunichi Samejima

Yuya Matsuoka

Gen Kojima

Yasuji Yamada

Shunsuke Yokotsuka

Hideaki Usui

Hidaka Furuya

Motoi Kamba

Toru Kawasaki

Atsuo Hiroi

Kazuto Sanada

Yoshio Imahori

Yoshinori Sugawara

Shinichi Takei

Kazuma Sekiya

Masao Yamaguchi

Kenji Kobayashi

Keiji Nomaru

Toshiaki Watanabe

Hideyuki Inoue

Yukihiro Sato

Masamitsu Agari

Hirokazu Matsumoto

Masahiro Inoue

Yukio Morishige

Masaaki Yamabe

Takashige Maekawa

Yuh Shiohara

Hiroyuki Watanabe

Ryo Fujii

Toshiyuki Yoshikawa

Hiroshi Kitamura

Naoko Shirota

Yoshihiro Teshima

Kohei Matsumoto

Kentaro Iizuka

Haruo Shida

Shuichi Matsuzaki

Ryugo Oba

Noriyuki Yoshihara

Kohji Oshikiri

Hideki Miyazaki

Kouzou Uekido

Satoshi Genda

Naoki Ohmiya

Shigeyoshi Kobayashi

Hiroyuki Fujimoto

Masaki Naritomi

Minoru Tagami

Masatoshi Wakahara

Jian-Guo Wen

Takao Itoh

Kiyoshi Ohsuga

Takafumi Hasegawa

Yoshihiro Kawaguchi

Nobumori Ogoshi

Fumihiro Sasaki

Takuji Matsuki

Kumiko Yokonuma

Shinsuke Kato

Naozo Sugimoto

Mikio Sasabe

Tsuyako Takeyoshi

Hiroshi Aoike

Kimitake Mantoku

Satoshi Usuda

Youko Suda

Toshitaka Fujioka

Yuki Nakamura

Ryuta Tamura

Koichi Mitani

Taizo Kise

Tatsuya Inaoka

Shigeo Shioda

Hisayuki Yamaoka

Saki Kozuma

Tsunekazu Ukai

Toshihiko Nishizaki

Shinzou Nomura

Masuo Amma

Hiroshi Katsushima

Sumihiro Moriyama

Fumiko Nonaka

Masaharu Hoshi

Aya Yamaguti

A method of processing a wafer having a plurality of devices formed in respective areas on a face side of the wafer, the areas being demarcated by a plurality of intersecting projected dicing lines, includes a resin applying step of coating the face side of the wafer with a liquid resin to cover an area of the wafer where the plurality of devices are present, a resin curing step of curing the liquid resin into a protective film, a protective tape laying step of laying a protective tape on an upper surface of the protective film, and a planarizing step of planarizing a face side of the protective tape.

Method of processing wafer

Provided is a dental floss that keeps cleaning performance thereof on one hand, and that is easy to handle because of a high rigid portion thereof on the other hand. Dental floss includes: a floss part that is formed by twisting a plurality of filaments together but not tying up the filaments; and tied-up parts that are provided continuously with the floss part, and are formed by tying up the plurality of the filaments, wherein each of the tied-up parts is formed in such a manner that filaments are covered with a contour part in a cross section thereof.

Dental floss, continuous dental floss, and method for manufacturing continuous dental floss

A method of processing a wafer to divide the wafer into individual device chips, includes a second modified layer forming step of applying a laser beam to the wafer while positioning a focused spot of the laser beam inside the wafer along the projected dicing lines extending in a second direction intersecting with a first direction, thereby forming second modified layers in the wafer along the projected dicing lines extending in the second direction. In the second modified layer forming step, when the focused spot of the laser beam along the projected dicing lines extending in the second direction reaches first modified layers, the focused spot of the laser beam is shifted along the first modified layers to thereby undulate the laser beam in a staggered pattern to prevent the second modified layers from being formed straight in the wafer along the projected dicing lines extending in the second direction.

Method of processing wafer and processing apparatus for wafer

A wafer processing method includes a holding step of holding a wafer on a chuck table; a dressing step of cutting a peripheral marginal area of the wafer by a cutting blade mounted to a cutting unit to condition a state of a cutting edge; and a dividing step of cutting streets by the cutting blade mounted to the cutting unit to divide the wafer into individual device chips.

Wafer processing method

A processing method of a wafer includes trimming the wafer along its outer peripheral edge while causing a cutting blade to cut from a front surface into a chamfered portion to a depth greater than a finish thickness, so that an annular stepped portion is formed in an outer peripheral surplus region. A protective member is bonded to a side of the front surface of the wafer, and the wafer is ground from its back surface to thin the wafer to a finish thickness. Between trimming and grinding, a laser beam is applied to the stepped portion, so that annular modified layers which are to be fractured under a pressing force to be applied by the grinding are formed in the stepped portion, whereby the fractured fragments of the stepped portion are subdivided.

Processing method of wafer

A control unit of a laser processing apparatus includes: a reference image storage section that images streets before formation of modified layers by an imaging unit and stores the captured image as a reference image; a calculation section that compares the reference image stored in the reference image storage section with an image of a wafer held by a chuck table that is captured by the imaging unit, and calculates the degree of agreement of the two images; and a decision section that decides whether the wafer is an unprocessed wafer not formed with the modified layers in the case where the degree of agreement calculated by the calculation section is more than a first predetermined value, and decides whether the wafer is a processed wafer formed with the modified layers in the case where the degree of agreement is equal to or less than a second predetermined value.

Laser processing apparatus

A processing method of a wafer includes a modified layer forming step of positioning the focal point of a laser beam with a wavelength having transmissibility with respect to the wafer to the inside of a planned dividing line and executing irradiation along the planned dividing line to form modified layers inside and a water-soluble resin coating step of coating the front surface of the wafer with a water-soluble resin before or after the modified layer forming step. The processing method also includes a dividing step of expanding a dicing tape to divide the wafer into individual device chips together with the water-soluble resin with which the front surface of the wafer is coated and a modified layer removal step of executing plasma etching and removing the modified layers that remain at the side surfaces of the device chips in a state in which the dicing tape is expanded and the front surfaces of the individual device chips are coated with the water-soluble resin.

A holding table manufacturing method includes forming a plurality of first grooves in a front surface of a plate-shaped body, forming a plurality of second grooves in a back surface of the plate-shaped body, laying, on one another, a plurality of the plate-shaped bodies formed respectively with a plurality of the first grooves and a plurality of the second grooves and uniting the plate-shaped bodies together to form a suction plate, and accommodating the suction plate in an accommodating recess of a frame body to form a holding table. The first grooves and the second grooves do not reach side surfaces of the plate-shaped body, the first grooves and the second grooves communicate with each other, and the thickness of the suction plate is larger than the depth of the accommodating recess.

Holding table manufacturing method

A crack detection method includes a crack forming step of applying a laser beam to a plate-shaped workpiece that has a first side and a second side opposite to the first side linearly from the first side with a focal point of the laser beam positioned inside the workpiece, the laser beam being of a wavelength having a transmitting property to the workpiece, to thereby form a modified layer inside the workpiece and further form a crack extending from the modified layer toward the second side, a coating material applying step of applying a coating material to the second side, and a crack detecting step of detecting the crack by searching for a portion where the coating material is linearly repelled.

Crack detection method

A processing apparatus includes a chuck table that holds a workpiece, a processing unit that processes the workpiece held by the chuck table, and a panel that surrounds components including the chuck table and the processing unit. Power source sockets are disposed on the panel, and electric apparatuses including an inspection device, a personal computer, a fan, and a cleaner are connected to the power source sockets and are used.

Processing apparatus

There is provided a wafer processing method including a protective member disposing step of disposing a protective member on a top surface of a wafer; a modified layer forming step of forming an annular modified layer by irradiating the wafer with a laser beam so as to position, within a peripheral surplus region, a condensing point of the laser beam having a wavelength transmissible through the wafer; a separating step of separating a part or a whole of the peripheral surplus region from the wafer by dividing the wafer with the annular modified layer as a starting point; and a grinding step of thinning the wafer by grinding an undersurface of the wafer. In the modified layer forming step, the modified layer is formed in a shape of a circular truncated cone whose diameter is decreased from the top surface to the undersurface of the wafer.

A wafer processing method includes a modified layer forming step, a protective member disposing step, a reinforcing portion forming step, and an undersurface processing step. The modified layer forming step forms, in a ring shape, a modified layer not reaching a finished thickness of a wafer by irradiating the wafer with a laser beam such that a condensing point of the laser beam is positioned in an inner part of the wafer, the inner part corresponding to a peripheral surplus region. The reinforcing portion forming step makes a cleavage plane reach the top surface from the modified layer formed in a ring shape, removes the modified layer, thins a region corresponding to a device region of the wafer to the finished thickness, and forms a ring-shaped reinforcing portion in a region corresponding to the peripheral surplus region of the wafer by grinding the undersurface of the wafer.

A wafer processing method for processing a wafer of a two-layer structure having a second wafer laminated on a front surface of a first wafer includes a stepped part forming step of cutting from the second wafer side to a peripheral surplus region of the first wafer to a depth corresponding to a finished thickness of the first wafer, thereby removing a chamfered part formed at a peripheral end of the second wafer and forming an annular stepped part in the peripheral surplus region of the first wafer, and a second wafer griding step of, after the stepped part forming step is carried out, grinding an exposed surface of the second wafer to make the second wafer to have a predetermined thickness.

A method of shaping a cutting blade, includes a modified layer forming step of forming a plurality of modified layers at different heights within a dressing member by irradiating the dressing member with a laser beam having a wavelength transmissible through the dressing member from one surface of the dressing member a plurality of times while a focusing point of the laser beam is positioned within the dressing member, and a blade shaping step of shaping the cutting blade into a predetermined shape formed by the plurality of modified layers by cutting the dressing member by the cutting blade until the cutting blade reaches the modified layers after performing the modified layer forming step.

Cutting blade shaping method

A laser processing apparatus includes an unloading/loading mechanism for unloading a wafer from and loading a wafer into a cassette placed on a cassette placing stand, a chuck table for rotatably holding the wafer unloaded from the cassette by the unloading/loading mechanism, an image capturing unit for capturing an image of a wafer, and a control unit. The control unit controls the unloading/loading mechanism to orient a mark indicating the crystal orientation of a processed wafer in a predetermined direction different from a direction in which the mark of an unprocessed wafer in the cassette is oriented, when the unloading/loading mechanism houses the processed wafer into the cassette.

Laser processing apparatus including imager of mark of processed workpiece

Growing community of inventors

Tokyo, Japan

Masaru Nakamura