Sony Corporation

Tohoku University

Nec Corporation

Stanley Electric Co., Ltd

Kyoto University

Meijo University

Sony Group Corporation

Masaru Kuramoto

Hideki Watanabe

Tatsushi Hamaguchi

Hiroyuki Yokoyama

Rintaro Koda

Noriyuki Futagawa

Tomoyuki Oki

Takao Miyajima

Shunsuke Kono

Masao Ikeda

Shoichiro Izumi

Atsushi Yamaguchi

Eiji Nakayama

Yuki Maeda

Masaaki Nido

Takashi Tange

Tsuyoshi Fujimoto

Seiichiro Kobayashi

Yoshitsugu Ohizumi

Hiroshi Yoshida

Yusuke Yokobayashi

Goro Fujita

Yoshihiro Wakita

Tetsuya Takeuchi

Jun Nakano

Hui Calvin Yang

Osamu Goto

Hiroshi Iwata

Shiro Uchida

Yutaka Imai

Shunsuke Murai

Kenichi Nishi

Haruo Sunakawa

Shinichi Wada

Masayuki Arimochi

Shulong Lu

Keijiro Takashima

Kaori Naganuma

Syousaku Kubo

Junji Sawahata

Xinhe Zheng

Tomoya Sugahara

Makoto Oota

Hiroyasu Ichinokura

Nozomi Ohashi

Keisuke Nakata

A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror formed on the substrate, a light-emitting structure layer formed on the first multilayer film reflecting mirror and including a light-emitting layer, and a second multilayer film reflecting mirror formed on the light-emitting structure layer. A resonator is constituted between the second multilayer film reflecting mirror and the first multilayer film reflecting mirror. The light-emitting structure layer includes a low resistance region and a high resistance region. The low resistance region is disposed in a ring shape between the first multilayer film reflecting mirror and the second multilayer film reflecting mirror. The high resistance region is formed inside the low resistance region and has an electrical resistance higher than an electrical resistance of the low resistance region.

Vertical cavity surface emitting device

A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror, a light-emitting structure layer with a light-emitting layer, and a second multilayer film reflecting mirror. The second multilayer film reflecting mirror constitutes a resonator between the first and second multilayer film reflecting mirrors. The second multilayer film reflecting mirror includes a first multilayer film, an intermediate film, and a second multilayer film. The first and second multilayer films have low refractive index films and high refractive index films that are alternately stacked. The intermediate film covers an upper surface of the first multilayer film and film has a translucency to a light emitted from the light-emitting layer. The second multilayer film partially covers an upper surface of the intermediate film. The intermediate film has a film thickness based on ½ of a wavelength inside the intermediate film of light emitted from the light-emitting layer.

A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror on the substrate, a first semiconductor layer on the first multilayer film reflecting mirror, a light-emitting layer on the first semiconductor layer, and a second semiconductor layer on the light-emitting layer. The second semiconductor layer includes a low resistance region and a high resistance region on an upper surface. The high resistance region is depressed from the low resistance region toward the light-emitting layer outside the low resistance region and impurities of the second conductivity type are inactivated in the high resistance region such that the high resistance region has an electrical resistance higher than an electrical resistance of the low resistance region. A light-transmitting electrode layer is in contact with the low resistance region and the high resistance region, and a second multilayer film reflecting mirror is on the light-transmitting electrode layer.

A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.

Light emitting element and method of manufacturing the same

An illumination device includes a light source configured to generate primary light having a Gaussian intensity distribution, an intensity-distribution converting member configured to convert the primary light to generate secondary light having a top-hat type intensity distribution, a wavelength converter configured to receive the secondary light from a light-receiving surface, generate tertiary light including the secondary light and wavelength-converted light in which a wavelength of the secondary light has been converted, and emit the tertiary light from an emission surface, and an antenna array having a plurality of optical antennas formed on the emission surface of the wavelength converter and arranged at a period larger than an optical wavelength of the secondary light in the wavelength converter.

Illumination device

A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.

Vertical cavity light-emitting element

A lighting apparatus includes a laser source configured to emit a laser beam, a homogenizer optical element that includes a light flux dividing section disposed to face the laser source, configured to divide the laser beam into a plurality of separate laser beams in a plane and make advancing directions of the plurality of separate laser beams different from each other, and a light flux superimposing section formed integrally with the light flux dividing section and superimposing the plurality of separate laser beams on each other in a common radiation region, and a fluorescent material disposed to face the homogenizer optical element, excited by the plurality of separate laser beams superimposed in the radiation region using the light flux superimposing section so as to emit fluorescence.

Lighting apparatus and lighting tool for vehicle

Provided is an optical semiconductor device including a laminate structural bodyin which an n-type compound semiconductor layer, an active layer, and a p-type compound semiconductor layerare laminated in this order. The active layerincludes a multiquantum well structure including a tunnel barrier layer, and a compositional variation of a well layeradjacent to the p-type compound semiconductor layeris greater than a compositional variation of another well layer. Band gap energy of the well layeradjacent to the p-type compound semiconductor layeris smaller than band gap energy of the other well layer. A thickness of the well layeradjacent to the p-type compound semiconductor layeris greater than a thickness of the other well layer.

Optical semiconductor device

A light emitting element includes at least a first light reflecting layer formed on a surface of a substrate, a laminated structural body made of a first compound semiconductor layer, an active layer and a second compound semiconductor layer formed on the first light reflecting layer, and a second electrode and a second light reflecting layer formed on the second compound semiconductor layer, the laminated structural body is configured from a plurality of laminated structural body units, a light emitting element unit is configured from each of the laminated structural body units, and a resonator length in the light emitting element unit is different in every light emitting element unit.

Light emitting element

A semiconductor optical device has a multilayer structureincluding a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. A second electrodeis formed on the second compound semiconductor layerthrough a contact layer. The contact layerhas a thickness of four or less atomic layers. When an interface between the contact layerand the second compound semiconductor layeris an xy-plane, a lattice constant along an x-axis of crystals constituting an interface layerA which is a part of the second compound semiconductor layer in contact with the contact layeris x, a lattice constant along a z-axis is z, a length along an x-axis in one unit of crystals constituting the contact layeris x', and a length along the z-axis is z&#x2032;, (z&#x2032;/x&#x2032;)&#x3e;(z/x) is satisfied.

Semiconductor optical device

A surface-emitting laser according to one embodiment of the technology includes a laser element section that includes a first multi-layer film reflecting mirror, a first semiconductor layer of a first conductivity type, an active layer, a second semiconductor layer of a second conductivity type, a second multi-layer film reflecting mirror, a nitride semiconductor layer of the second conductivity type, and a light output surface in this order. The laser element section further includes an electrode that injects a current into the active layer.

Surface light-emitting laser

A light-emitting element includes at least a GaN substrate; a first light reflecting layerformed on the GaN substrateand functioning as a selective growth mask layer; a first compound semiconductor layer, an active layer, and a second compound semiconductor layerthat are formed on the first light reflecting layer; and a second electrodeand a second light reflecting layerthat are formed on the second compound semiconductor layer. An off angle of the plane orientation of the surface of the GaN substrateis 0.4 degrees or less, the area of the first light reflecting layeris 0.8Sor less, where Srepresents the area of the GaN substrate, and as a bottom layerA of the first light reflecting layer, a thermal expansion relaxation filmis formed on the GaN substrate

Light-emitting element and manufacturing method thereof

Growing community of inventors

Kanagawa, Japan

Masaru Kuramoto