Other

Frontec Incorporated

Masaru Kubota

Tadahiro Ohmi

Yasuhiko Kasama

Akira Nakano

Osamu Yoshida

Hirofumi Fukui

Hitoshi Kitagawa

Chisato Iwasaki

Koichi Fukuda

Tomofumi Oba

Masanori Miyazaki

There is provided an electronic device like a TFT using a silicon nitride insulating film of a single layer structure having an excellent dielectric voltage, and a method of producing the electronic device with reliability. In the electronic device, a conductive wiring pattern is deposited on a surface of an electrically insulated substrate, and an insulating layer is formed to cover the wiring pattern and the substrate. The insulating layer is made of a silicon nitride insulating film. A contact angle .theta. between the wiring pattern and the substrate is equals 60.degree. or more, and a value Tn1/Tg of a thickness Tn1 of the silicon nitride insulating film and a thickness Tg of the wiring pattern equals 2 or more. A horizontal distance Tn2 between a rise start position, where the silicon nitride film rises because of a step of the wiring pattern and the top end of the wiring pattern, and Tn1 are in a relation where 0.6.ltoreq.Tn2/Tn1.

Method of sputtering a silicon nitride film

Growing community of inventors

Miyagi-ken, Japan

Masaru Kubota