Sharp Kabushiki Kaisha Corporation

Pixart Imaging Incorporated

Sharp Kabushiki Kaisah

Masaru Kubo

Takahiro Takimoto

Naoki Fukunaga

Isamu Ohkubo

Akifumi Yamaguchi

Toshihiko Fukushima

Hideo Wada

Toshimitsu Kasamatsu

Motohiko Yamamoto

Mutsumi Oka

Zenpei Tani

Mitsuru Mariyama

Norihisa Fujii

Makoto Hosokawa

Hiroki Nakamura

Kazuhiro Natsuaki

Shigeki Hayashida

Takamitsu Suzuki

Toshio Naka

Masaya Isobe

Tetsuzo Nagahisa

Masayuki Fukumi

Shinji Kamiya

Hisao Ichijoh

Shohhei Ohsawa

Toshifumi Yoshikawa

(Jason) Chih-Hung Lu

Isamu Okubo

Takuya Itou

A nitride semiconductor device includes a second insulating film () covering at least a drain electrode () and a thermal stress reducer that reduces thermal stress in a place where thermal stress that is generated between the drain electrode () and the second insulating film () reaches its maximum at the time of a load short. The thermal stress reducer () is a drain field plate portion () formed by an extension of an upper part of the drain electrode () toward a source electrode ().

Nitride semiconductor device

A field-effect transistor (a GaN-based HFET) includes a gate electrode, a gate electrode pad, a first wiring line connecting one end of the gate electrode and the gate electrode pad, a second wiring line connecting the other end of the gate electrode and the gate electrode pad, and a resistance element that is connected to the first wiring line and is capable of adjusting the impedance of the first wiring line.

Field effect transistor

A heterojunction field effect transistor includes a first contact portion and a second contact portion. A length of the first contact portion in a longitudinal direction is smaller than a length of source electrodes in the longitudinal direction, and a length of the second contact portion in the longitudinal direction is smaller than a length of drain electrodes in the longitudinal direction. For each drain electrode, a distance from ends of the second contact portion to ends of the drain electrode, the ends being outside of the second contact portion, is greater than a distance from ends of the first contact portion to ends of the source electrode, the ends being outside of the first contact portion.

Heterojunction field effect transistor

A lens frame, made from metal, retaining a light-emitting lens and a light-receiving lens is retained between a second mold and a third mold both of which are made from light-shielding resins. Anchors are formed by filling light-shielding resin for forming the third mold into fixing slots formed in an upper surface of the second mold and through holes formed in the lens frame. Since the lens frame is made from metal, thermal expansion of the lens frame is hardly caused by ambient temperature changes and self-heating. This causes little difference in the amount of change in difference between the lenses. Further, the lens frame is fixed with anchors between the second mold and the third mold. This suppresses the occurrence of sliding caused by difference in thermal expansion coefficient between the lens frame and the second and third molds.

Optical distance-measuring device and electronic device

A lens frame, made from metal, retaining a light-emitting lens and a light-receiving lens is retained between a second mold and a third mold both of which are made from light-shielding resins. The lens frame has an asperity structure on its front and back surfaces. This greatly enhances adhesiveness between the light-emitting lens and the lens frame and adhesiveness between the light-receiving lens and the lens frame, thus preventing sliding of the light-emitting lens and the light-receiving lens over the lens frame.

An optical ranging sensor includes a light emitting unit for projecting a light beam on an object to be measured, a light receiving unit on which a light spot of reflected light of the light beam from the object is formed, and a processing circuit unit for processing output signals from the light receiving unit and detecting a distance to the object. The light receiving unit includes an effective light receiving part having light receiving cells arranged in matrix form in a first direction in which a position of the light spot moves as the object moves along a direction of an optical axis of the light emitting unit, and in a second direction orthogonal to the first direction. A size of the effective light receiving part in the second direction is not smaller than a radius of the light spot but not larger than a diameter thereof.

Optical ranging sensor and electronic equipment

An optical detection device includes a light emitting element, which is an area sensor, a light emitting lens part for irradiating an object to be measured with a bundle of emission rays emitted from the light emitting element, a light receiving lens part for condensing reflected light from the object, a light receiving element for detecting reflected light from the object condensed by the light receiving lens part, and a signal processing section for processing a light-reception signal from the light receiving element. Based on the light-reception signal from the light receiving element, the signal processing section detects at least one of an x-coordinate or a y-coordinate of the object on an x-y coordinate plane from at least one of a light-spot position or a light-spot shape on the light receiving element.

Optical detection device and electronic equipment for detecting at least one of an X-coordinate and a Y-coordinate of an object

An optical ranging sensor includes an infrared LED encapsulated in a first light-permeable resin section, a light receiving device encapsulated in a second light-permeable resin section, a light-shielding resin member in contact with the first and second resin sections, a drive circuit section for driving the LED, a light receiving device control section for controlling the light receiving device, and a control section for the drive circuit section and light receiving device control section. Under control of the control section, a driving time of the LED coincides with an exposure time of the light receiving device. Further, while the LED is not driven, the light receiving device is also exposed for a time identical to the exposure time. An output difference between outputs at the exposure with driving the LED and at the exposure without driving the LED is calculated, and ranging is performed based on the output difference.

Optical ranging sensor and electronic device

An optical distance measuring sensor includes a light receiving element arranged on the same plane as a light emitting element. The light receiving element includes a light receiving unit having a plurality of cells and collecting the light emitted from the light emitting element and reflected by a target object, a flash memory unit storing a predetermined position on the light receiving unit, and a signal processing circuit unit sensing the collection position of the light on the light receiving unit, and measuring the distance to the target object based on a relative positional relationship between the predetermined position stored in the flash memory unit and the collection position of the light on light receiving unit.

Optical distance measuring sensor and electronic device

In one embodiment of the present invention, an output control device is disclosed capable of reducing a chip size and realizing a low cost. An output control device includes a switching transistor controlling an output voltage by having an on/off time ratio controlled and a control IC controlling the on/off time ratio of the switching transistor on the basis of the output voltage controlled by the switching transistor. The switching transistor is made of a lateral power MOSFET.

Output control device, and AC/DC power source device, circuit device, LED backlight circuit device, and switching DC/DC converter device each using output control device

A channel isolation regionis formed over the entire width of an N-type silicon substrate, and photothyristors, in each of which an anode diffusion region, a P-gate diffusion region, a cathode diffusion regionare formed parallel to the channel isolation regionover almost the entire width of the N-type silicon substrate, are formed in a left-hand portionand in a right-hand portionand are wired inversely parallel. Thus, the inter-channel movement of residual holes during commutation is restrained by the channel isolation region, by which commutation failure is suppressed to improve a commutation characteristic. Further, an operating current large enough for controlling a load current of approx. 0.2 A is obtained although a chip is divided by the channel isolation region. Therefore, using this bidirectional photothyristor chip makes it possible to implement an inexpensive SSR with a main thyristor eliminated.

Bidirectional photothyristor chip, light-fired coupler and solid state relay

A Schottky barrier diodeis formed between a P-gate diffusion regionand an N-type silicon substratein a photothyristor on a CHside and a photothyristor on a CHside. With this arrangement, the injection of minority carriers from the P-gate diffusion regionto the N-type silicon substrateis restrained to reduce the amount of remaining carriers, and an excessive amount of carriers remaining in the N-type silicon substrateduring commutation has a reduced chance of moving toward the opposite channel side, allowing the commutation characteristic to be improved. Therefore, by a combination with an LED, there can be provided a light-fired coupler for firing and controlling the load.

Bidirectional photothyristor chip

A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer in the semiconductor structure, a second, second conductivity type semiconductor layer having an impurity concentration lower than that of the first, second conductivity type semiconductor layer, a second, first conductivity type semiconductor layer provided on the second, second conductivity type semiconductor layer, or a second, first conductivity type semiconductor layer provided within the second, second conductivity type semiconductor layer.

Light receiving element, light detector with built-in circuitry and optical pickup

A photodetector with a built-in circuit includes a semiconductor substrate, an integrated circuit provided on the semiconductor substrate, and a photodiode provided on the semiconductor substrate. The integrated circuit includes a SiGe layer provided on at least a portion of the integrated circuit.

Photodetector with built-in circuit

A corrosion-resistant conductive layer (TiW layer) formed of a corrosion-resistant material is formed to extend from a bonding pad portion to an interconnection portion of a light receiving element. A semiconductor laser device according to the present invention includes the light receiving element.

Growing community of inventors

Kitakatsuragi-gun, Japan

Masaru Kubo