Shimadzu Corporation

Nippon Packing Co., Ltd.

Masaru Koeda

Tetsuya Nagano

Shinji Miyauchi

Kichiya Tanino

Makoto Sato

Ryo Tateno

Satoshi Irikuchi

Kazuo Sano

Yasuhiro Akune

Akira Sato

Akio Soejima

Eiji Ishiguro

Yuji Tanaka

A grating of the present invention has a groove cross section shaped, for example, like a sinusoidal wave or a sawtooth other than a laminar shape, and a groove bottom part shaped as a flat form. In a region wherein the groove cycle and the used wavelength are the same degree for wavelengths from near infrared to infrared, the grating of the present invention has the excellent spectrum performance (high efficiency in balance in a wide wavelength zone) more than a holographic grating and an echellette grating in related arts. When replicas for the grating of the present invention are manufactured, the engagement force of grooves with each other is small as the groove aspect ratio is small, and a release agent sufficiently reaches the groove bottom as the groove bottom is large.

Grating, negative and replica gratings of the grating, and method of manufacturing the same

A substrate is subjected to holographic exposure to a sinusoidal or half-sinusoidal resist pattern corresponding to grating groove thereon. Thereafter, the substrate and the resist pattern are subjected to a first etching step at which they are irradiated with an ion beam obliquely at an angle that is identical to the blaze angle in the presence of CFas an etching gas, whereby they are cut until the height of the resist is about &#x2153; of the initial value. Thereafter, the substrate is subjected to a second etching step at which the substrate is irradiated with an ion beam in the direction corresponding to the bisector of the vertex in the presence of a mixture of CFand Oas an etching gas, whereby the substrate is cut until the resist disappears completely to an extent such that some overetching occurs.

Blazed holographic grating, method for producing the same and replica grating

In a method of forming a holographic grating, a photoresist layer is formed on an optical substrate, and a resist pattern is formed in the photoresist layer to have grooves depth deeper than a predetermined depth of diffraction grating grooves to be formed. Then, the photoresist layer with the resist pattern is etched by an ion beam generated by a mixed gas containing a fluorine based gas and oxygen until the resist pattern is substantially completely disappears. Thus, the diffraction grating grooves having the predetermined depth are directly engraved on the optical glass plate.

Method of forming holographic grating

In producing an etalon, a thickness of an etalon base plate is measured, and the etalon base plate is placed in a process chamber. Then, a gas having a chemical reactivity with respect to a material of the etalon base plate is introduced into the process chamber, and a surface of the etalon base plate is etched for only a predetermined time corresponding to a thickness of the etalon base plate, thereby obtaining the etalon having a desired thickness.

Method of manufacturing etalon

The present invention discloses diffraction gratings which do not generate any thermal strain and can perform extremely high-precision and high-efficiency diffraction nearly free from scattered beams. The diffraction gratings are built by allowing the chemically deposited film of silicon carbide whose crystal planes are strongly oriented to the (220) planes in terms of Miller indices to form on the substrate comprising sintered silicon carbide, polishing the surface of the deposited film to 5 .ANG. RMS or less, and directly etched laminar-type grating grooves on that surface by using ion-beam etching.

Diffraction grating

A dry etching method for etching a surface of a substrate with plasma of mixed gas including i) gas that is reactive to the material of the substrate, and ii) inert gas. Accumulation of reaction products between the substrate and the reactive gas ions on the substrate is effectively eliminated by the ions of the inert gas plasma. Accordingly the etching rate of the substrate is not lowered. Silicon carbide (SiC) is one of the most suitable object of the plasma etching of the present invention, since it is hard to engrave by conventional dry etching methods.

Growing community of inventors

Kyoto, Japan

Masaru Koeda