Kabushiki Kaisha Toshiba

Kioxia Corporation

Toshiba Memory Corporation

Masaru Kidoh

Ryota Katsumata

Masaru Kito

Hideaki Aochi

Hiroyasu Tanaka

Yoshiaki Fukuzumi

Megumi Ishiduki

Yosuke Komori

Ryouhei Kirisawa

Tomoko Fujiwara

Yasuyuki Matsuoka

Junya Matsunami

Yoshimasa Mikajiri

Shigeto Oota

Mitsuru Sato

Akihiro Nitayama

Yoshihisa Iwata

Tomoo Hishida

Kiyotaro Itagaki

Takashi Maeda

Tadashi Iguchi

Yoshihiro Akutsu

Hitoshi Ito

Tomo Ohsawa

Riichiro Shirota

Yoshio Ozawa

Nobutoshi Aoki

Masaki Kondo

Yoshihiro Uozumi

Katsunori Yahashi

Toshiyuki Enda

Hiroyoshi Tanimoto

Daigo Ichinose

Toru Matsuda

Tsuneo Uenaka

Takuji Kuniya

Sanae Ito

Naoki Kusunoki

Atsushi Konno

Soichiro Kitazaki

Hitomi Yasutake

Kazuhide Takamura

A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.

Nonvolatile semiconductor memory device and manufacturing method thereof

A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.

Nonvolatile semiconductor memory device and method for manufacturing same

According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, a charge storage film, and a drive circuit. The stacked body is provided on the substrate. The stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films. A through-hole is made in the stacked body to align in a stacking direction. The semiconductor pillar is buried in an interior of the through-hole. The charge storage film is provided between the electrode film and the semiconductor pillar. The drive circuit supplies a potential to the electrode film. The diameter of the through-hole differs by a position in the stacking direction. The drive circuit supplies a potential to reduce a potential difference with the semiconductor pillar as a diameter of the through-hole piercing the electrode film decreases.

Nonvolatile semiconductor memory device and method for driving same

A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.

Non-volatile semiconductor storage device and method of manufacturing the same

Method for reading data of a first memory cell transistor of a nonvolatile semiconductor memory device

Method for writing data of a first memory cell transistor of a nonvolatile semiconductor memory device

A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions a charge storage layer formed to surround the side surfaces of the columnar portions: and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.

Manufacturing method of a nonvolatile semiconductor memory device

Growing community of inventors

Tokyo, Japan

Masaru Kidoh