Kabushiki Kaisha Toshiba

Masaru Kido

Hideaki Aochi

Masaru Kito

Ryota Katsumata

Hiroyasu Tanaka

Mitsuru Sato

Yoshiaki Fukuzumi

Yasuyuki Matsuoka

Toshiharu Tanaka

Hideki Inokuma

Yoichi Takegawa

The semiconductor memory device of the present invention includes a plurality of memory strings having a plurality of electrically reprogrammable memory cells connected in series, the memory strings having a column shaped semiconductor, a first insulation film formed around the column shaped semiconductor, a charge accumulation layer formed around the first insulation film, a second insulation film formed around the charge accumulation film and a plurality of electrodes formed around the second insulation film, a bit line connected to one end of the memory strings via a plurality of selection transistors, and a conducting layer extending in two dimensions and in which the plurality of electrodes of the memory strings and the plurality of electrodes of different memory strings are shared respectively, wherein each end part of the conducting layer is formed in step shapes in a direction parallel with the bit line.

Semiconductor memory device and manufacturing method thereof

A non-volatile semiconductor storage devicehas a plurality of memory stringswith a plurality of electrically rewritable memory transistors MTr-MTrconnected in series. The memory stringincludes a columnar semiconductor CLmn extending in a direction perpendicular to a substrate, a plurality of charge accumulation layers formed around the columnar semiconductor CLmn via insulating films, and selection gate lines on the drain side SGD contacting the columnar semiconductor to configure transistors. The selection gate lines on the drain side SGD have lower selection gate lines on the drain side SGDd, each of which is arranged with an interval with a certain pitch, and upper selection gate lines on the drain side SGDu located on a higher layer than the lower selection gate lines on the drain side SGDd, each of which is arranged on gaps between the lower selection gate lines on the drain side SGDd.

Non-volatile semiconductor storage device and method of manufacturing the same

A semiconductor device includes a semiconductor substrate with a trench; a capacitor; a collar oxide film arranged on a portion of a side of the trench above the capacitor; a storage node arranged on a side of the collar oxide film in an upper portion of the trench and electrically connected to a storage electrode of the capacitor; a select transistor provided on a surface of the semiconductor substrate and having a source region in contact with the trench; a spacer covering a side of the source region; and a surface strap contact arranged upon the spacers, the source region and the storage node.

Semiconductor device having trench capacitor and fabrication method for the same

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Komae, Japan

Masaru Kido