Renesas Technology Corp.

Ap Memory Technology Corporation

Mitsubishi Denki Kabushiki Kaisha

Renesas Electronics Corporation

Zentel Japan Corporation

Ap Memory Technology (hangzhou) Limited Co.

Other

Masaru Haraguchi

Takashi Kubo

Katsumi Dosaka

Tetsushi Tanizaki

Wenliang Chen

Takeshi Hamamoto

Takeshi Fujino

Tokuya Osawa

Hironori Iga

Yoshitaka Fujiishi

Chun Yi Lin

Jun Gu

Hideyuki Noda

Yasuhiko Tsukikawa

Kenichi Yasuda

Isamu Hayashi

Chien-An Yu

Hiroyuki Kawai

Akira Yamazaki

Fukashi Morishita

Tadaaki Yamauchi

Yasuhiro Konishi

Yasuhiko Taito

Mitsuya Kinoshita

Kyoji Yamasaki

Yoshikazu Morooka

Chikayoshi Morishima

Kei Hamade

Bunsho Kuramori

Akihiro Hirota

Jun Setogawa

Yoshito Nakaoka

Yasumitsu Murai

Mineo Noguchi

Atsuo Mangyo

Kan Murata

Hiroshi Kinoshita

Takayuki Gyohten

Chien An Yu

Masahiro Ishihara

Yoshihiro Yamashita

Mitsuru Yoneyama

A capacitor device includes: a substrate; an insulation film, disposed on the substrate; at least one capacitor unit cell, being covered by the insulation film on the substrate, the at least one capacitor unit cell having at least one first electrode and at least one second electrode disposed over the first electrode; an exposed conductive layer, disposed on the at least one capacitor unit cell and the insulation film, the exposed conductive layer having a first conductive pad formed on a first side of the exposed conductive layer and a second conductive pad formed on a second side different from the first side; wherein the first conductive pad and the second conductive pad are electrically connected to the at least one first electrodes and the at least one second electrodes of the at least one capacitor unit cell respectively.

Capacitor device and manufacturing method therefor

A circuit assembly includes an integrated circuit (IC) die and a capacitor die. The IC die has a first hybrid bonding layer. The capacitor die is stacked with the IC die, and is configured to include a capacitor coupled to the IC die, and has a second hybrid bonding layer in contact with the first hybrid bonding layer; wherein the IC die is electrically coupled to the capacitor die through the first hybrid bonding layer and the second hybrid bonding layer.

Circuit assembly

A method for manufacturing a semiconductor structures is provided. The method includes forming a first hybrid bonding layer over a first wafer having a logic structure, forming a second hybrid bonding layer over a second wafer having a first capacitor structure, bonding the first wafer and the second wafer through a hybrid bonding operation to connect the first hybrid bonding layer and the second hybrid bonding layer, thereby obtaining a first bonded wafer, and the first capacitor structure is electrically connected to the logic structure through the first hybrid bonding layer and the second hybrid bonding layer, and singulating the first bonded wafer to obtain a plurality of semiconductor structures.

Method for manufacturing semiconductor structure

A circuit assembly includes an integrated circuit (IC) die and a first capacitor die. The IC die provides an IC and includes a plurality of first conductive pads. The first capacitor die provides a plurality of capacitors, and includes a plurality of second conductive pads at the first side and a plurality of conductive vias at the second side. At least one of the second conductive pads electrically connects to the capacitors. The conductive vias is adapted to form a plurality of external signal connections of the IC die and the first capacitor die. The IC die is stacked with the first capacitor die in such a way that the first conductive pads electrically connect to the second conductive pads, and surfaces of the IC die and the first capacitor die attaching to each other are substantially of the same size.

A plurality of memory cells are arranged along a plurality of bit lines and a plurality of word lines. A sense amplifier is connected to each of the bit lines. Arranged along each bit line are at least four memory cells including first to fourth memory cells that are either connected to or disconnected from one of the bit lines by means of first to fourth switching elements according to an active or inactive state of first to fourth word lines. The first memory cell stores a first bit value, the second memory cell stores a second bit value, and the third and fourth memory cells each store a third bit value. A memory cell array control circuit activates and then deactivates the third and fourth word lines, subsequently activates the first and second word lines, and then activates the sense amplifier.

Semiconductor memory device

In the present invention, lower electrodes () are disposed at a period din an X direction and at a period din a Y direction. Upper electrodes () are disposed so as to be shifted by half the length of the period (d) in the X direction with respect to the lower electrodes (), and are disposed so as to be shifted by half the length of the period (d) in the Y direction with respect to the lower electrodes (). Each pair of a lower electrode () and an upper electrode (), which face each other and capacitively couple with each other, form a capacitor cell (C). Cell terminals () are disposed at the period (d) in the X direction, disposed at the period (d) in the Y direction, and respectively electrically connected to the lower electrodes () and the upper electrodes (). The cell terminals () are disposed so as to be shifted by half the length of the period (d) in the X direction with respect to the cell terminals (), and are disposed so as to be shifted by half the length of the period (d) in the Y direction with respect to the cell terminals ().

A control device of the invention for a semiconductor memory device comprising an interface conforming to JEDEC standard of DDRx-SDRAM or LPDDRx-SDRAM, comprises banks, a read/write control circuit, and a transfer control circuit. Each bank comprises subarrays. Each subarray comprises memory cells arranged along bit lines and word lines. The read/write control circuit controls reading of data from and writing of data to the semiconductor memory device. The transfer control circuit controls data transfer inside the semiconductor memory device and sets to enable an additional transfer command not specified in the JEDEC standard and a transfer command for writing data, read from a transfer source memory cell, to a transfer destination memory cell without passing outside the semiconductor memory device by transmitting a first signal value not used in the JEDEC standard to the semiconductor memory device via at least one signal line of the interface.

Semiconductor memory device comprising an interface conforming to JEDEC standard and control device therefor

A circuit system having compact decoupling structure, including: a mother board; at least one circuit unit, each having a substrate, a logic-circuit die, a plurality of first metal contacts, and a plurality of second metal contacts, the substrate having a first surface and a second surface, the first metal contacts being formed on the first surface and soldered onto the mother board, the second metal contacts being formed on the logic-circuit die and soldered onto the second surface to form flip-chip pillars, and the flip-chip pillars determining a height of a gap between the die and the substrate; and at least one decoupling unit for providing an AC signals decoupling function for the at least one circuit unit; wherein each of the at least one decoupling unit is placed in the gap of one said circuit unit and includes a mother die and at least one stack-type integrated-passive-device die.

Circuit system having compact decoupling structure

A semiconductor memory device is provided with a row control circuit, in order to dissolve a Row Hammer issue. The row control circuit is configured to: (A) latches one of (a) a target address upon issuing of an ACTIVE command to the semiconductor memory device, and (b) a row address of a victim cell in which data of a memory cell is affected by the target address, as a victim address by using a predetermined row address latch method; and then, (B) refreshes the victim cell having the victim address by a predetermined refresh method upon issuing of a REFRESH command.

Semiconductor memory device for preventing occurrence of row hammer issue

The data processing system has: a plurality of hardware resources each having at least one standby mode; a control part for controlling execution of a task achieved by using, of the plurality of hardware resources, predetermined ones, and a working status of each hardware resource; and a power-source part for controlling supply of a power source to each hardware resource. The control part performs the scheduling of a scheduled execution time of the task based on information for determining a timing of executing the task, and calculates a standby time of the hardware resource based on a result of the scheduling. The control part compares the standby time with a break-even time depending on the standby mode, thereby deciding whether or not to cause each hardware resource to transition to the standby mode.

Data processing system with selective engagement of standby mode based on comparison with a break-even time

Disclosed is a data processing device capable of efficiently performing an arithmetic process on variable-length data and an arithmetic process on fixed-length data. The data processing device includes first PEs of SIMD type, SRAMs provided respectively for the first PEs, and second PEs. The first PEs each perform an arithmetic operation on data stored in a corresponding one of the SRAMs. The second PEs each perform an arithmetic operation on data stored in corresponding ones of the SRAMs. Therefore, the SRAMs can be shared so as to efficiently perform the arithmetic process on variable-length data and the arithmetic process on fixed-length data.

Data processing device and data processing method thereof

In order to perform easily power cutoff of a device configuring a data processing system and to improve the power reduction effect at standby, the data processing system is configured with a microcontroller, a memory IC including a nonvolatile RAM array, and a power supply unit capable of controlling the power supply to the microcontroller and the memory IC, separately. When a control signal to control read and write of data to the nonvolatile RAM array is at a high level, the memory IC is enabled read and write of data to the nonvolatile RAM array. When the control signal is at a low level, the memory IC is disenabled read and write of data to the nonvolatile RAM array. The microcontroller sets the control signal at a low level, when the memory IC is shifted to a standby state by the power supply unit.

Data processing system, microcontroller and semiconductor device

A semiconductor device in the present invention includes a DLL circuit which determines a phase shift amount, an arithmetic circuit which shifts the phase shift amount by a predetermined phase at test mode time, registers which set the phase shift amount, and a transmission circuit which shifts a phase to the set phase to transmit or receive a signal. The transmission circuit has a first phase shifter which shifts a first signal to the set phase, a first bidirectional buffer which loops back the first signal at the test mode time, a second phase shifter which phase-shifts the signal outputted from the first bidirectional buffer, a third phase shifter which phase-shifts a third signal, a second bidirectional buffer which loops back the third signal at the test mode time, a fourth phase shifter which phase-shifts the signal outputted from the second bidirectional buffer, and a FIFO which takes out an output signal of the second phase shifter or the fourth phase shifter.

Semiconductor device which transmits or receives a signal to or from an external memory by a DDR system

A variable delay line receives and delays a data strobe signal transferred from a data source side in synchronization with a transfer data by a predetermined period, and produces a delayed data strobe signal and the non-delayed data strobe signal to a detector. The detector determines that a preamble period ends and effective data is transferred, when the delayed data strobe signal is at the L level at the time of rising of the non-delayed data strobe signal from the L level to the H level. According to a result of detection, an interface circuit unit takes in the transfer data and initializes a take-in address. The data strobe signal changes to a high-impedance state when a postamble ends. An influence of a glitch noise is avoided upon this change of the data strobe signal, and the data transfer can be executed fast and accurately.

Interface circuit

There is provided a semiconductor device including an output buffer circuit which reduces an area occupied by a circuit for impedance adjustment and allows high-speed impedance adjustment. In an impedance measuring circuit, the impedance values of reference transistors having the same sizes as those of a plurality of transistors composing the output buffer circuit which are equal in size are measured. An impedance code generating circuit outputs impedance codes corresponding to the impedance values of the reference transistors to an output buffer code generating circuit based on the result of the measurement from the impedance measuring circuit. The output buffer code generating circuit generates output buffer codes for adjusting the impedance of the output buffer circuit by performing an arithmetic operation process to provide an objective impedance based on the impedance codes.

Semiconductor device and impedance adjusting method thereof

Growing community of inventors

Tokyo, Japan

Masaru Haraguchi