Canon Kabushiki Kaisha

Masaru Fujimura

Toru Koizumi

Katsuhito Sakurai

Hiroki Hiyama

Masanori Ogura

Fumihiro Inui

Tomoko Eguchi

Tomoyuki Noda

Shinichiro Shimizu

Yuichiro Yamashita

Shin Kikuchi

Yu Arishima

Shoji Kono

Shintaro Takenaka

Kazuhiro Sonoda

Hidekazu Takahashi

Akira Okita

Yasuo Yamazaki

Akira Ohtani

Taikan Kanou

A solid-state imaging apparatus includes: a photoelectric conversion unit configured to convert light into an electric charge; a floating diffusion region configured to convert the electric charge into a voltage; a transfer transistor configured to transfer the electric charge from the photoelectric conversion unit to the floating diffusion region; and a transfer transistor driving circuit configured to control a gate potential of the transfer transistor, wherein the transfer transistor driving circuit controls the gate potential so as to be changed in at least two changing rates during a period of transition from the ON state to the OFF state of the transfer transistor, and the second changing rate out of the two changing rates is higher than the first changing rate.

Solid-state imaging apparatus changing a gate voltage of a transfer transistor, driving method for the same, and imaging system

A method of manufacturing a semiconductor device including a first region and a second region contacting the first region along a boundary line, includes forming a pattern having an on-boundary-line line portion with a width defined by a first line which is arranged in the first region and is parallel to the boundary line, and a second line which is arranged in the second region and is parallel to the boundary line. The forming the pattern includes independently performing, for a photoresist applied on a substrate, first exposure for defining the first line, and second exposure for defining the second line, and developing the photoresist having undergone the individually performing the first exposure and the second exposure.

Method of manufacturing forming conductive line pattern in boundary region

A solid-state imaging apparatus has a pixel array in which a plurality of pixels are arranged to form a plurality of rows and a plurality of columns, and a plurality of column signal lines are arranged, wherein each of the plurality of pixels includes a photoelectric converter including a first well formed in a semiconductor substrate and having a first conductivity type, and an impurity region arranged in the first well and having a second conductivity type different from the first conductivity type, and an in-pixel readout circuit which outputs, to the column signal line, a signal corresponding to charges generated in the photoelectric converter, the in-pixel readout circuit including a circuit element arranged in a second well having the first conductivity type, and wherein the first well and the second well are isolated by a semiconductor region having the second conductivity type.

Solid-state imaging apparatus having pixels with plural semiconductor regions

An imaging apparatus has an imaging area formed by arranging a plurality of imaging blocks each including a pixel array, a plurality of vertical signal lines, a horizontal output line commonly provided for the plurality of vertical signal lines to read out signals read out to the plurality of vertical signal lines, a first scanning circuit, and a second scanning circuit, wherein signals of the pixels of a selected row in the pixel array are read out to the plurality of vertical signal lines in accordance with a driving pulse from the first scanning circuit, the signals read out to the plurality of vertical signal lines are sequentially read out to the horizontal output line in accordance with a driving pulse from the second scanning circuit, and a length in a row direction of the pixel array is smaller than a length in a column direction of the pixel array.

Solid-state imaging apparatus and imaging system

There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor.

Image pickup apparatus

A solid-state image pickup apparatus includes a reading unit having a plurality of pixels connected thereto, holding signals from the pixels, and a control unit capable of controlling operations of the pixels and reading unit. The control unit controls the pixels and reading unit in a first operation mode without addition, in a second operation mode in which signals from aa of the pixels are added, aa being an integer greater than one, and in a third operation mode in which signals from bb of the pixels are added, bb being an integer greater than aa. The reading unit includes a holding unit having a capacitance value of C, and the holding unit includes a first capacitor having a capacitance value of C/bb and a second capacitor having a capacitance value of C/p, p being a common multiple of aa and bb.

Solid-state image pickup apparatus and image pickup system

A solid-state imaging apparatus including pixels each including a photoelectric conversion element, and a light shielding layer covering the photoelectric conversion element is provided. For each of the photoelectric conversion elements, the light shielding layer includes a light shielding portion which shields a portion of incident light to the photoelectric conversion element, and an aperture which passes another portion of the incident light. The pixels include first and second pixels which have different areas on a planar view of the photoelectric conversion element. The area of the photoelectric conversion element in the first pixel is larger than the area of the photoelectric conversion element in the second pixel on the planar view. An area of the light shielding portion included in the first pixel is larger than an area of the light shielding portion included in the second pixel.

A solid-state imaging apparatus includes a pixel array in which a plurality of unit cells are arranged to form a plurality of rows and a plurality of columns, wherein each of the plurality of unit cells includes a pixel, and the pixel comprising a photoelectric conversion element and an in-pixel readout circuit which outputs a signal corresponding to charges generated in the photoelectric conversion element, power is supplied to the plurality of unit cells via a power supply line and a ground line, and at least one of the plurality of unit cells includes at least a part of a capacitive element having a first electrode connected to the power supply line and a second electrode connected to the ground line.

A solid-state image pickup apparatus has: a pixel area having unit pixels arranged in a two-dimensional matrix; a plurality of analog/digital converters, each provided for the unit pixels on the same column; a plurality of first/second memory units, provided to respective analog/digital converters, for storing the digital signals of one/another row; and a digital signal processing unit for generating an output signal based on the signals from the first and second memory units, wherein the first and second memory units store the digital signals of a same row at a non-addition operation and store the digital signals of different rows at an addition operation, and wherein, at the non-addition operation, if one of the first and second memory units on a same column is defective, the digital signal processing unit generates the output signal based on the signal from the other one of the units on the same column.

Solid-state image pickup apparatus and method for driving the same

In a solid-state imaging apparatus, if the total read out time of all pixels is shortened when effective pixels are thinned out without thinning out OB pixels, then the rows have different reset time periods, and the problem of uneven charge accumulation time periods arises. An improvement by the present invention is that, if no signals are read out from a part of the rows in an effective pixel region to skip the rows, then the time period in which the rows to be skipped are selected is made shorter than that in which the rows from which signals are read out are selected, and the pixels in the optical black pixel region and those in the effective pixel region are driven by the drive pulses of patterns different from each other.

Solid-state imaging apparatus, imaging system, and drive method of solid-state imaging apparatus

A solid-state image sensing device comprises a first readout circuit configured to read out a signal from a pixel array including a plurality of pixels, a signal holding unit configured to hold the signal read out from the first readout circuit, a second readout circuit configured to read out the signal held in the signal holding unit, and a current control unit configured to control an electric current flowing through at least part of the first readout circuit while the first readout circuit reads out the signal. The current control unit controls an electric current flowing through the at least part of the first readout circuit in a moving image capturing mode to be smaller than an electric current flowing through the at least part of the first readout circuit in a still image capturing mode.

Solid-state image sensing device and image sensing system

A solid-state imaging apparatus comprising a plurality of pixels each including a photoelectric conversion element, and a light shielding layer which covers the photoelectric conversion element is provided. The light shielding layer comprises a first light shielding portion which covers at least part of a region between the photoelectric conversion elements that are adjacent to each other, and a second light shielding portion for partially shielding light incident on the photoelectric conversion element of each of the plurality of pixels. An aperture is provided for the light shielding layer, the remaining component of the incident light passing through the aperture. A shape of the aperture includes a cruciform portion including a portion extending in a first direction and a portion extending in a second direction that intersects the first direction.

A photoelectric conversion device prevents a pseudo signal caused by the parasitic capacitance of a transfer switch from being input to an amplifier. A photoelectric conversion device () includes a pixel () which outputs a signal to a signal line (), an amplifier which amplifies the signal supplied via the signal line (), and an isolation switch () inserted between a signal line () and the input node of the amplifier. The pixel () includes a photodiode, a floating diffusion (FD), a transfer switch which transfers the charge of the photodiode to the FD, and an amplification transistor which outputs a signal to a signal line () in accordance with the potential of the FD. The isolation switch () is turned off at least in a period when a transfer pulse for controlling the transfer switch of the pixel () transits.

Method for driving a photoelectric conversion device with isolation switches arranged between signal lines and amplifiers

In an amplifying type MOS sensor having a 3-transistor construction, when a frame rate is raised, an accumulation time of a frame just after the switching of a drive mode becomes short. When a gain correction is made to compensate a lack of accumulation time, a deterioration in picture quality is caused. A read out scan and a reset scan are executed in parallel in the frame before the switching of the drive mode, thereby preventing that a time period for resetting a pixel is overlapped with a time period for holding a pixel signal into a holding unit.

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Sagamihara, Japan

Masaru Fujimura