Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Other

Nec Corporation

Taiyo Yuden Co., Ltd.

Trivale Technologies

Masaru Aoki

Kazunori Inoue

Masami Hayashi

Toshihiko Iwasaka

Yuichi Masutani

Kenichi Miyamoto

Manabu Tanahara

Shigeaki Noumi

Reiko Noguchi

Ryoma Oami

Koji Saito

Kiyoshi Murase

Yusuke Yamagata

Yasuyoshi Itoh

Taro Yasuda

Toru Takeguchi

Takeshi Shimamura

Kikuji Fukai

Katsuaki Murakami

Munehito Kumagai

Kazushige Koyama

Taro Maejima

Michinari Tsutsumi

Toshio Yada

Masanao Kobayashi

Tohru Takeguchi

Takeshi Terazono

Tsuyoshi Tabuchi

Kumi Tsuda

There is provided a repair technique capable of repairing interconnect lines and the like in an electronic device with ease and with reliability and capable of suppressing the increase in the number of manufacturing steps associated with the repair to suppress the increase in manufacturing costs. The electronic device having a multi-layer interconnection structure includes: a foundation layer; a patterned interconnect line provided on the foundation layer; and an insulation film formed on the foundation layer and the interconnect line. The insulation film includes at least one thin film part in which at least part of the insulation film which lies on the interconnect line has a thickness less than that of its surroundings.

Electronic device, method of manufacturing same and method of repairing same

The insulating properties of terminal lines on an array substrate can be maintained without adding any steps for avoiding formation of a counter electrode on the peripheral portion of a color filter substrate. A display includes an insulation film formed to cover an electrode formed on a surface of an array substrate, an oxide semiconductor film formed on a surface of a color filter substrate, and a seal member that is located between the insulation film and the oxide semiconductor film, which face each other, and that bonds the insulation film and the oxide semiconductor film together. An area surrounded by the seal member in plan view is taken as a display area. A portion of the oxide semiconductor film that corresponds to the display area is a conductor, and a portion of the oxide semiconductor film that corresponds to the outside of the display area is an insulator.

Display and method for manufacturing display

A contact hole that penetrates a protective insulating film, an interlayer insulating film, and a transparent cap film and has a surface of a low-reflection film uncovered as a bottom surface is formed in a lead-out wiring region. A lower-layer terminal portion is formed by the low-reflection film and a low-resistance conductive film below the bottom surface of the contact hole. A contact hole that penetrates the protective insulating film and a transparent cap film and has a surface of a low-reflection film uncovered as a bottom surface is formed in the lead-out wiring region. An upper-layer terminal portion is formed by the low-reflection film and a low-resistance conductive film below the bottom surface of the contact hole.

Method for manufacturing touch panel structure, and method for manufacturing display apparatus

In a lead-out wiring area, a protective conductive film is formed on a bottom surface and a side surface of a first contact hole including a surface of a first low resistance conductive film, and a part of a surface of an upper interlayer insulating film, and a second protective conductive film is formed on a bottom surface and a side surface of a second contact hole including a surface of a second low resistance conductive film, and a part of the surface of the upper interlayer insulating film. Then, a lower layer terminal part for a lower layer wiring line is formed of a laminated structure of the first low resistance conductive film and the first protective conductive film, and an upper layer terminal part for an upper layer wiring line is formed of a laminated structure of the second low resistance conductive film and the second protective conductive film.

Touch panel structure, method for manufacturing touch panel structure and method for manufacturing display apparatus

An image processing system, an image processing method, and a program capable of suppressing errors related to association of a person appearing in a video are provided. An image processing system includes: an image acquiring unit which accepts input of videos captured by a plurality of video cameras; a next camera predicting unit which predicts a video camera on which an object detected in a video is to appear next; and a display control unit which announces a confusability of an object according to a similarity between the detected object and another object that is likely to appear in a video of the video camera predicted by the next camera predicting unit and which causes a display device to display a video from the video camera predicted by the next camera predicting unit.

Image processing system, image processing method, and program

An array substrate has regions in which an intermediate resist film thickness is formed and processed by an intermediate exposure amount which does not completely expose a resist, respectively on a drain electrode, source terminal, and a common connection wiring which are made of a second conductive film. Thin film patterns or a common wiring made of a first conductive film is formed in substantially entire regions on the bottom layers of the regions so that the heights from a substrate are substantially the same.

Array substrate, display device, and method for manufacturing the array substrate

A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.

Thin film transistor including a light-transmitting semiconductor film and active matrix substrate

Provided is a thin film transistor having a semiconductor film disposed in a plurality of portions on a substrate, a source electrode and a drain electrode which are disposed, on a semiconductor film, in contact with the semiconductor film while being spaced from each other, and a gate electrode which is disposed across the source electrode and the drain electrode via a gate insulating film; an auxiliary capacitance electrode which is disposed on the semiconductor film while in contact with the semiconductor film; a source line which has the semiconductor film in a lower layer, extends from the source electrode; a gate line which extends from the gate electrode; a pixel electrode which is electrically connected to the drain electrode; and an auxiliary capacitance electrode connecting line which electrically connects the auxiliary capacitance electrodes to each other in the adjacent pixels.

Thin film transistor substrate and manufacturing method for the same

A liquid crystal display device has pixel electrodes including a transmissive pixel electrode and a reflective pixel electrode. The liquid crystal display device includes a TFT array substrate, an opposing substrate, a sealing material that bonds both substrates, an organic film formed on the TFT array substrate and having a thick film portion provided below the pixel electrode and a thin film portion provided outside the thick film portion, a columnar spacer formed on the opposing substrate and holding substrate gap between the both substrates, and a gap retaining pad formed in a region outside the display region and inside the sealing material to adjust the substrate gap outside the display region according to the substrate gap on the pixel electrode. The columnar spacer holds the substrate gap between both substrates over the gap retaining pad and over the pixel electrode.

Liquid crystal display device

There is provided a TFT substrate including a gate electrode having a thick film part and a thin film part with a smaller film thickness than the thick film part, a semiconductor active film formed above the thick film part and the thin film part of the gate electrode, an ohmic contact film formed on an inside of the semiconductor active film and on the semiconductor active film corresponding to the thin film part on an outside of the thick film part, and an electrode film constituting a source electrode and a drain electrode, having a planar shape identical to or on an inside of the ohmic contact film, and formed on the ohmic contact film.

TFT substrate and method of manufacturing the same

There is provided a liquid crystal display device having a pixel electrode including a transmissive pixel electrode and a reflective pixel electrode. The liquid crystal display device includes a TFT array substrate, an opposing substrate, a sealing material that bonds the both substrates, an organic film formed on the TFT array substrate and having a thick film portion provided below the pixel electrode and a thin film portion provided outside the thick film portion, a columnar spacer formed on the opposing substrate and holding substrate gap between the both substrates, and a gap retaining pad formed in a region outside the display region and inside the sealing material to adjust the substrate gap outside the display region according to the substrate gap on the pixel electrode. The columnar spacer holds the substrate gap between the both substrates over the gap retaining pad and over the pixel electrode.

In forming a thin film transistor using multi-tone exposure, a wiring width of a foundational wiring is 40 &#x3bc;m or less, and a ratio of a wiring width of a foundational wiring in a dense case to a space between adjacent wirings is 1.7, preferably 1.0 or less.

Thin film transistor substrate with divided gate electrode

A liquid crystal display apparatus in which an arrangement possibly susceptible to degradation in display quality by a miss shot of a laser used for turning amorphous silicon into polycrystalline silicon is avoided and a narrow peripheral frame can be attained. A gate interconnection for transistors in a driving circuit area is arranged along a folded line having two lines extending in two different directions and a bent portion. Channel regions of the transistors are arranged along the two lines, such that the channel regions do not overlap the bent portion.

Liquid crystal display apparatus and TFT panel

To provide a method of producing a TFT array and a liquid crystal display apparatus in which a contact resistivity of a pixel electrode and a drain electrode through a contact hole in an interlayer insulating film can be not more than 10E4&OHgr; stably. A method of producing TFT of the present invention for a liquid crystal display apparatus includes the step of forming TFT, the step of forming an interlayer insulating film, in which the surface is made to be flat so that a level difference due to the TFT area is eliminated, on a transparent insulating substrate, the step of providing a contact hole on a drain electrode of the interlayer insulating film so as to forming a pixel electrode on the interlayer insulating film so that the pixel electrode is electrically connected with the drain electrode through the contact hole, and the step of after forming the contact hole on the interlayer insulating film, applying a surface treatment for cleaning the surface of the contact portion to the surface of the substrate including the surface of the drain electrode exposed from the contact hole.

Method for producing thin film transistor and thin film transistor using the same

In an electronic component placing apparatus, four magazines are mounted on a head, and yet electronic components are housed in each magazine. In this apparatus, by an operation of selectively inserting a suction nozzle into four insertion openings in the magazines, it is possible to load a desired electronic component on a substrate, and this component loading can be repeatedly performed until the housed components are exhausted.

Growing community of inventors

Kumamoto, Japan

Masaru Aoki