Tokyo Electron Limited

Masaru Amai

Takehiko Orii

Takayuki Toshima

Masahiro Mukoyama

Satoru Tanaka

Takuya Mori

Hiroki Ohno

Kenji Sekiguchi

Kazuya Dobashi

Koji Kagawa

Syuhei Yonezawa

Toshihide Takashima

A liquid processing apparatus includes a heating member, a substrate holder, a processing liquid supply and a coil. The heating member is disposed adjacent to a portion of a substrate and has an insulating member. The substrate holder is configured to hold the substrate. The processing liquid supply is configured to supply a processing liquid onto the substrate held by the substrate holder. The coil is configured to heat the heating member inductively to heat the portion of the substrate.

Liquid processing apparatus and liquid processing method

A substrate processing method according to exemplary embodiments includes bringing removal solution obtained by mixing a nitric acid, a strong acid stronger than the nitric acid, and water into contact with a substrate in which a boron monofilm is formed on a film including a silicon-based film so as to remove the boron monofilm from the substrate.

Method and apparatus for substrate processing

In a substrate cleaning method and a substrate cleaning method according to the present invention, a brushis brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brushis moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzleonto the substrate W, and a cleaning position Sn of the two-fluid nozzleis moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brushfrom the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center Pthan the cleaning position Sb of the brush. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.

Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method

A substrate processing apparatus includes a substrate processing partfor processing a substrate by a processing liquid and a processing-liquid recovery pathallowing of a passage of the processing liquid discharged from the substrate processing part. The processing-liquid recovery pathis provided with foreign substance removal linesincluding filtersfor removing an foreign substance from the processing liquid and cleanersfor cleaning the filtersrespectively. With this constitution, it is possible to cancel the blocking of foreign substances in pipes etc. and also possible to lengthen the life span of the filters.

Substrate processing apparatus

A substrate processing apparatus and a substrate processing method are provided wherein an oxide film which is thinner than the conventional films can be formed with uniform thickness when forming an oxide film on the front-side surface of a substrate. A substrate processing apparatus () for processing a substrate (W) by feeding a processing liquid comprises: a temperature regulator () to regulate the temperature of said processing liquid; and a underplate temperature adjuster () to adjust the temperature of an underplate () which is placed in proximity to the backside surface of said substrate W.

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Tokyo-to, Japan

Masaru Amai