Kobelco Research Institute, Inc.

Kabushiki Kaisha Kobe Seiko Sho

Kobe Steel, Ltd.

Masaru Akamatsu

Hidehisa Hashizume

Yasuhide Nakai

Yuji Yamamoto

Eiji Takahashi

Masato Kannaka

Norio Suzuki

Masakazu Kajita

Noritsugu Fujii

Kunio Iba

Satoshi Yanai

Kenji Imanishi

A rotational misalignment between semiconductor wafers constituting a bonded wafer is calculated. A light source is arranged at a position which is on a front side of an opening of a notch and which is separated from an outer edge portion of a bonded wafer by a predetermined interval, and outputs light to irradiate the outer edge portion of the bonded wafer including the notch. A camera receives and photoelectrically converts reflected light that is specularly-reflected by the outer edge portion of the bonded wafer including the notch among the light outputted by the light source in order to output a brightness distribution of the reflected light as an image. A computer analyzes positions of notches from the image outputted by the camera to obtain a notch position misalignment, and further calculates a rotational misalignment between semiconductor wafers using a center position misalignment between the semiconductor wafers.

Rotational misalignment measuring device of bonded substrate, rotational misalignment measuring method of bonded substrate, and method of manufacturing bonded substrate

An apparatus and method are provided for measuring the end surface of a disk-shaped semiconductor wafer based on its projection image, without the influence of contaminants on the end surface. A rotation supporting mechanism supports a wafer between a first supporting position rotated by +&#x3b4;relative to a predetermined reference position and a second supporting position rotated by &#x2212;&#x3b4;degrees at two or more supporting positions. An image sensor picks up a projection image of the wafer's end surface. An index value for the end surface is calculated for each of a plurality of obtained projection images. One representative value of the calculated index values or an aggregate value is obtained, and a shape measurement of the wafer's end surface corresponding to the reference supporting position is derived. When the wafer's radius and a chamfer width are set as r and k, &#x3b4;&#x2267;cos((r-k)/r) is satisfied.

Shape measurement apparatus and shape measurement method

A shape measuring device including a light projecting device for projecting a light flux to a measurement portion, and image pickup device for picking up a projection image of the measurement portion. The light projecting device includes a collimator lens having outgoing light of a point light source pass and collimating the same in a light projection direction and one or more apertures shielding passage of light in a range outside an image pickup range or passage of light in a range inside the image pickup range and outside a boundary located in a range outside a projection image of a measurement portion. Moreover, a parallel supporting portion for supporting a face of the measurement target in parallel with the light projection direction at a position on the center side with respect to the measurement portion in the measurement target supported by a center sucking and supporting mechanism is provided.

Shape measuring device

A shape measuring apparatus includes a point light source including a white light-emitting diode, a collimator lens for forming a parallel beam as a result of causing light emitted from the point light source to be incident upon the collimator lens, a telecentric lens device, including two-side telecentric optics or object-side telecentric optics, for being irradiated with the light that has passed an object to be measured from the collimator lens, and an image sensor for projecting thereon an image of the object produced by the light that has passed through the telecentric lens device.

Shape measuring apparatus

Light is introduced to an inner surface of a fine tube, which is an object for measurement of the inner surface roughness, through a first end of the fine tube at a small angle with respect to a center line of the fine tube and the light emerging from a second end of the fine tube after the light is reflected by multiple reflections within the fine tube is measured to evaluate the roughness of the inner surface of the fine tube. Upon such measurement, the light to be introduced to the first end of the fine tube is converged once on the center line of the fine tube and then diverged again, and the polarization direction of the light to be introduced to the first end of the fine tube is set to an angle equal to or around 90 degrees with respect to the reflection surface of the fine tube. Thus, the roughness of the inner surface of the fine tube can be calculated in accordance with a result of detection of the intensity of emergent light from the fine tube by means of a photo detector.

Pipe inner surface measuring method and apparatus

Growing community of inventors

Kobe, Japan

Masaru Akamatsu