Fujitsu Corporation

Tokyo Institute of Technology

Fujitsu Microelectronics Limited

Masaomi Yamaguchi

Hiroshi Minakata

Yasuyuki Tamura

Shinji Miyagaki

Kazuto Ikeda

Chikako Yoshida

Tsunehisa Sakoda

Kazuhiro Takahashi

Yasuyoshi Mishima

Yoshihiro Arimoto

Tetsuro Tamura

Hiroshi Ishihara

Yoshihiro Sugita

Hiromasa Hoko

Yasuo Nara

Koji Aizawa

Satoshi Hasegawa

Yoshiaki Tabuchi

The method of manufacturing a semiconductor device comprises; forming an HfSiO filmon a silicon substrate; exposing the HfSiO filmto NHgas to thereby form an HfSiON film; forming an HfSiO filmon the HfSiON film; adhering Al to the surface of the HfSiO filmto thereby form an Al adhered layeron the surface of the HfSiO film; and forming a polysilicon filmon the HfSiO filmwith the Al adhered layerformed on the surface.

Semiconductor device and method of manufacturing the same

The semiconductor device comprises a gate insulating film including a first dielectric film of HfAlO(0.7&#x3c;x&#x3c;1) formed over a semiconductor substrate, and a second dielectric film different from the first dielectric film formed over the first dielectric film; and a gate electrode formed over the gate insulating film and including a polycrystalline silicon film, whereby the local abnormal growth of the polycrystalline silicon film in the process of forming the polycrystalline silicon film is prevented, and the gate leakage current can be much decreased.

Semiconductor device and method for fabricating the same

A method contains the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a surface of the heated silicon substrate, to deposit on the silicon substrate an HfAlO:N film (0.1&#x3c;x&#x3c;0.3) having a higher specific dielectric constant than that of silicon oxide, and incorporating N, by thermal CVD. The method can form an oxide film of HfAlO (0&#x3c;x&#x3c;0.3) having desired characteristics, as a gate insulation film.

Manufacture of semiconductor device having insulation film of high dielectric constant

A permeation preventing film of a silicon nitride filmis inserted between a silicon substrateand a High-k gate insulation filmto thereby prevent the High-k gate insulation filmfrom being deprived of oxygen, while oxygen anneal is performed after a gate electrode layerhas been formed to thereby supplement oxygen. The silicon nitride filmwhich is the permeation preventing film, becomes a silicon oxide nitride filmwithout changing the film thickness, whereby characteristics deterioration of the High-k gate insulation filmdue to the oxygen loss can be prevented without lowering the performance of the transistor. The semiconductor device having the gate insulation film formed of even a high dielectric constant material can be free from the shift of the threshold voltage.

A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.

Ferroelectric memory, multivalent data recording method and multivalent data reading method

A semiconductor device manufacture method has the steps of: (a) forming an interface layer of SiO or SiON on the surface of an active region of a silicon substrate; (b) forming a high dielectric constant gate insulating film such as HfSiON having a dielectric constant higher than that of silicon oxide, above the interface layer; (c) forming a gate electrode of polysilicon above the high dielectric constant gate insulating film; (d) passivating the substrate surface at least before or after the high dielectric constant gate insulating film is formed; (e) forming an insulated gate electrode structure by patterning at least the gate electrode and the high dielectric constant gate insulating film; and (f) forming source/drain regions in the active region on both sides of the insulated gate electrode structure. The semiconductor device has the high dielectric constant insulating film having a dielectric constant higher than that of silicon oxide.

Semiconductor device having high dielectric constant gate insulating layer and its manufacture method

Disclosed is a method of manufacturing a semiconductor device which can form, as a gate insulation film, an oxide film of HfAl(0&#x3c;x&#x3c;0.3) having a small shift in flat band voltage. The method comprises the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, which contains metal compound of Hf and metal compound of Al in carrier gas, and hydrogen gas to a surface of the heated silicon substrate, and depositing on the silicon substrate an HfAlO film as a high-dielectric-constant insulation film having a higher specific dielectric constant than that of silicon oxide, by thermal CVD.

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Kawasaki, Japan

Masaomi Yamaguchi