Renesas Technology Corp.

Renesas Electronics Corporation

Masaomi Kamakura

Takahiro Miki

Toshio Kumamoto

Takashi Okuda

To eliminate the substrate voltage dependences of the respective resistance values of resistor elements, in the resistor elements coupled in series to each other over respective substrate regions, the ends of the resistor elements are coupled to the corresponding substrate regions by respective bias wires such that respective average potentials between the substrate regions of the resistor elements and the corresponding resistor elements have opposite polarities, and equal magnitudes.

Semiconductor device having resistors with a biased substrate voltage

A current source block and a negative resistance generation block are connected in parallel. The negative resistance generation block generates a negative resistance in response to the minute variations of an output voltage. Thus the output resistance of a current source circuit is given by the combined resistance of the negative resistance and the resistance of a resistor in the current source block connected in parallel. The resistance of the resistor in the current source block and the negative resistance are controlled to be substantially the same to thereby increase the output resistance of the current source circuit. The current source circuit serves to increase an output resistance when viewed from an differential output terminal. As a result, use of this current source circuit realizes a differential amplifier providing a high gain.

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Tokyo, Japan

Masaomi Kamakura