Sharp Kabushiki Kaisha Corporation

Tohoku University

Masao Urayama

Hiroshi Ohki

Seiki Yano

Tetsuya Ide

Yuka Utsumi

Takashi Yamashita

Hisanori Bessho

Daiji Sawada

Junichi Sawahata

Hideo Ohno

Masashi Kawasaki

Takashi Kyotani

Akira Tomita

Yuichi Kamimura

Yoshio Inoue

Minoru Makita

Hwisim Hwang

Keiichiro Uda

Takeo Takase

Satoru Motonami

Terutaka Tokumaru

Yuko Morita

Yoshiyuki Takegawa

Tsunaki Tsunesada

Keitarou Matsui

A heat-storage material that provides a sufficiently large amount of thermal energy as a latent-heat storage material including a semiclathrate hydrate and that improves hysteresis between the solidifying temperature and the melting starting temperature and a refrigerator and a cooling container that include the heat-storage material are provided. The heat-storage material that changes phase at a predetermined temperature includes water, a main agent including a quaternary ammonium salt that forms a semiclathrate hydrate, a pH adjuster that maintains alkaline properties, and a nucleating agent that generates a cation that exhibits positive hydration. In such an aqueous solution maintained to be alkaline, the nucleating agent becomes a nucleus in solidification, and thus, the temperature difference between the solidifying temperature and the melting temperature can be decreased.

Heat-storage material and refrigerator and cooling container that include the heat-storage material

An object to be cooled is quickly brought to a suitable temperature. An object to be cooled is quickly brought to a suitable temperature. A thermal energy storage packaccording to the present invention is a thermal energy storage pack that performs temperature management of food and/or beverage, and includes a first deep-drawn container filled with a first thermal energy storage material that exhibits phase change at a predetermined temperature, a second deep-drawn container that is overlaid by the first accommodation portion and that is filled with a second thermal energy storage material that maintains a liquid phase state at the phase change temperature of the first thermal energy storage material, and a cover material that closes off the first deep-drawn container. The second deep-drawn container comes into contact with a wine bottle.

Thermal energy storage pack, thermal exchange unit, and manufacturing method of thermal energy storage pack

A thin-film transistor () of the present invention includes an insulating substrate (), a gate electrode () which has a predetermined shape and is formed on the insulating substrate (), a gate insulating film () formed on the gate electrode (), and a semiconductor layer () which is polycrystalline ZnO and is formed on the gate insulating film (). The semiconductor layer () is immersed in a solution in which impurities are dissolved so that the impurities are selectively added to a grain boundary part of the polycrystalline ZnO film. Subsequently, a source electrode () and a drain electrode () are formed so as to have a predetermined shape. Next, a protection layer () is formed on the source electrode () and the drain electrode (). Thus, a thin-film transistor which has a good subthreshold characteristic and has a zinc oxide film as a base of an active layer can be realized.

Semiconductor element, method for manufacturing same, and electronic device including same

A carbon nanotube has a carbon network film of polycrystalline structure divided into crystal regions along the axis of the tube, and the length along the tube axis of each crystal region preferably ranges from 3 to 6 nm. An electron source includes a carbon nanotube having a cylindrical shape and the end of which on the substrate side is closed and disposed in a fine hole. The end on the substrate side of the tube is firmly adhered to the substrate. The carbon nanotube is produced by a method in which carbon is deposited under the condition that no metal catalyst is present in the fine hole and produced by a method in which after the carbon deposition the end of the carbon deposition film is modified by etching the carbon deposition film using a plasma. Therefore, an electron source excellent in the evenness of field emission characteristics in a field emission region (pixel) in the device plane and driven with low voltage can be provided, and a display operated with ultralow power consumption exhibiting ultrahigh luminance can be provided.

Carbon nanotube and method for producing the same, electron source and method for producing the same, and display

A cold-cathode electron source having an improved utilization efficiency of an electron beam and a simple structure. The cold-cathode electron source comprises a gate electrode () provided on a substrate () through an insulating layer () and an emitter () extending through the insulating layer () and the gate electrode () and disposed in an opening of the gate. During the emission of electrons from the emitter (), the following relationships are satisfied: 10 [V/&#x3bc;m]&#x2267;(Va&#x2212;Vg)/(Ha&#x2212;Hg)&#x2267;Vg/Hg; and Vg/Hg [V/&#x3bc;m]&#x2267;Va&#xd7;10&#xd7;(9.7&#x2212;1.3&#xd7;1n(Hg))&#xd7;(1000/Ha), where Ha [&#x3bc;m] is an anode-emitter distance, Va [V] is an anode-emitter voltage, Hg [&#x3bc;m] is a gate-emitter distance, and Vg [V] is a gate-emitter voltage.

Cold-cathode electron source and field-emission display

Low-cost electron emission device and field emission display using a cold cathode electron source having a high electron beam utilization efficiency and capable of controlling the spread of the electron beam. Under the condition Ea&#x2267;Eg, the electric field strength near the gate electrode forming an electron emission control unit is varied between a central portion and a peripheral portion in the plane of a single pixel (or sub-pixel), thereby controlling the spread of the electron beam. A device using a field emission-type electron source array capable of achieving a high emission current density at low voltage can be realized at low cost.

Electron emission device with multi-layered fate electrode

Disclosed is a cold cathode electron source characterized in that a cold cathode material which can achieve electron emission in a low electric field (e.g., a carbon nanotube), necessary constituent elements are provided individually in uncalcined ceramic sheets (green sheets ) and the sheets are laminated and calcined to form an integral structure. The electron source can be manufactured by forming through-holes in a flat plate, charging a conductive paste containing carbon nanotubes dispersed therein into the through-holes by vacuum suction, thereby causing to orient the carbon nanotubes in the axis direction of the through-hoes . The electron source is useful for the low-cost manufacture of a device with a cold cathode electron source which can achieve ready vacuum evacuation and maintenance of the vacuum level, as well as a high emission current density at a low voltage.

Electron source having first and second layers

The electron-source array of the present invention is provided with cathode electrodes placed on an insulation substrate in the form of lines; and gate electrodes that are placed face to face with the cathode electrodes with the insulation film being interpolated in between. In this arrangement, the cathode electrodes and the gate electrodes are arranged so as to intersect each other with a pore being formed at an intersecting portion between each cathode electrode and each gate electrode in a manner so as to penetrate the insulation film, and the pore is filled with a conductive material or a semiconductive material with the material being electrically connected to the corresponding cathode electrode, and is formed in a manner so as to separate from the gate electrodes with a space in between. Thus, it becomes possible to form very fine emitters uniformly without the need for a high-precision patterning technique and consequently to provide an electron-source array that enables an X-Y matrix driving process.

Electron-source array and manufacturing method thereof as well as driving method for electron-source array

A silicon substrate is used as the substrate, on which a conical projection is formed as a cathode. A gate electrode is arranged via an insulating film formed on the substrate. The gate electrode is formed so as to enclose and encircle the cathode while the pointed portion of the cathode and the surface of the gate electrode are coated with two layered coating films.

Field emission electron source and fabrication process thereof

Featured is an image forming device for driving field emission electron sources capable of low-vacuum operation, high in ion impact resistance, and controlled in orientation, under X-Y addressing through electrode lines of simple and low-cost configuration. The image forming device includes cathode electrode lines and gate electrode lines of wire structure, where the field emission electron sources are selectively grown on the cathode electrode lines. A vacuum gap is provided between a supporting substrate on the back-plate side and the cathode electrode lines, and a getter is arranged on the supporting substrate.

Image forming device using field emission electron source arrays

A cathode is formed on a glass substrate by depositing nickel thereon, and silicon dioxide is allowed to accumulate on the cathode by sputtering to form an insulator film. Then, a gate electrode is provided on the insulator film by depositing nickel thereon. A hole is formed on the glass substrate by lithography to carry out patterning, and the gate electrode and the insulator film are selectively etched to create a hole for the formation of an emitter emitting electrons. Furthermore, nickel is stacked into the hole by deposition to form the emitter, and subsequently the emitter is covered with sulfur as a high vapor-pressure substance to form a high vapor-pressure substance layer.

Process of fabricating field-emission type electron source, electron

There is provided a magnetron comprising a cold cathode having an electron emitting member which is formed linearly or as a plane on a substrate to emit electrons a subdivided anode disposed oppositely in parallel with the electron emitting member, the subdivided anode having cavity resonators formed therein at the side of the cold cathode, and a magnet which producing a magnetic field lying at right angles to an electric field applied between the cold cathode and the subdivided anode. There is also provided a microwave oven for dielectric-heating a substance to be heated by using the magnetron as a microwave supply source.

Growing community of inventors

Saitama, Japan

Masao Urayama