Canon Kabushiki Kaisha

Masao Ueki

Akira Sakai

Isamu Shimizu

Yutaka Hirai

Jinsho Matsuyama

Masaaki Hirooka

Kazunori Ueno

Akihiro Mouri

Kazuo Isaka

Junichi Hanna

Jun-Ichi Hanna

Osamu Kamiya

Eiji Takeuchi

Mitsuhiro Fukatsu

Fusayoshi Kondo

An environmental information system arranged to effectively provide environmental information. The information system has a product constitution information storage section for storing product constitution information including information on parts and/or raw materials constituting each of products, an environmental information storage section for storing environmental information about each product, the parts and/or the raw materials, and an integrated environmental information forming subsystem for forming integrated environmental information with respect to each product on the basis of the product constitution information and the environmental information. The formation system provides a user with environmental information about the products according to information on user's attribute.

System for providing product environment information

The invention provides a light emitting device with a simple device structure capable of emitting light of various colors. The light emitting device can be produced by simple processing steps: A mold is pressed convex-and-concave against a glass substrate thereby forming a corresponding convex-and-concave structure on the glass substrate; a dielectric layer and a positive electrode layer are successively formed on the glass substrate, thereby forming a positive electrode substrate; a negative electrode substrate provided with a negative electrode layer formed thereon, is prepared; an active layer material is coated on the negative electrode substrate; and the positive and negative electrode substrates are bonded to each other via a spacer.

Light emitting device, electric device provided with the light emitting

Light emitting device having convex-and-concave structure on substrate

A method for forming a crystal comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) exposed from said nonnucleation surface having a sufficiently small area for a crystal growing only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS), thereby growing a single crystal from said single nucleus.

Method for forming crystal and crystal article obtained by said method

A method for forming a deposited film comprises the step of introducing a starting material (A) which is either one of a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a material which becomes crystal neclei for a deposited film to be formed or a material capable of forming crystal nuclei selectively scatteringly on its surface is previously arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step of introducing a starting material (B) which is the other one into said film forming space, thereby causing surface reaction on said adsorption layer (I) to form a crystalline deposited film (I).

Method for forming a deposited film

Vacuum valve and a vacuum treating apparatus in which said vacuum valve

A method for forming a deposited film comprises effecting a step (a) and a step (b) at least one time, the step (a) being introduction of a starting material (A) which is either one of a gaseous starting material for formation of a deposited film or a gaseous halogenic oxidizing agent having the property of oxidative action on said gaseous starting material into a film forming space in which a substrate for film formation is arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step (b) being the introduction of a starting material (B) which is the other of said gaseous starting material and said gaseous halogenic oxidizing agent into said film forming space, thereby causing surface reaction on said adsorbed layer (I) to occur to form a deposited film (i).

Method for forming deposited film

A method for forming deposited film, which comprises effecting a step [A] and another step [B] at least one time, the step [A] being the introduction of a starting material (A) which is either one of a gaseous starting material (I) for formation of a deposited film and a gaseous halogenic oxidizing agent (II) having the property of oxidative action on said starting material into a film forming space in which a substrate of which at least the surface to be filmed thereon has crystal orientability is previously arranged to have said starting material adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step [B] being the introduction of the other starting material (B) into said film forming space, thereby causing the surface reaction on said adsorption layer (I) to occur and form a deposited film.

A method for forming a deposited film comprises introducing a gaseous starting material containing silicon and/or germanium atoms; a starting material containing at least one member selected from the group consisting of aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), and tantalum (Ta), which is capable of being converted to gaseous state; and a gaseous halogenic oxidizing agent which exerts an oxidative effect on the said starting materials for film formation, into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursors of said percursors as the feeding source for the constituent element of the deposited film.

Method for forming deposited film by generating precursor with halogenic

A method for forming deposited film by introducing into a reaction space a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming said deposited film on a substrate previously position in a film forming space spatially communicated with said reaction space with the use of at least one precursor of these precursors as the feeding source for the constituent element of said deposited film, said method comprising the step of increasing the proportion of the amount of said gaseous starting material introduced relative to the amount of said gaseous halogenic oxidizing agent introduced in said reaction space.

A method for forming a deposited film, which comprises introducing gaseous starting materials, containing group III and/or group V compound as the constituent element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film of a substrate existing in a film-forming space with the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.

Method for forming deposited film containing group III or V element by

There is disclosed an apparatus for forming deposited film which forms deposited film on a substrate by introducing a gaseous starting material for formation of deposited film and a gaseous oxidizing agent having the property of oxidation action for said gaseous starting material through separate routes respectively into a film forming space to thereby effect chemical contact therebetween, comprising one or two or more chambers for formation of deposited film and one or two or more etching chambers for etching at least one of said substrate and the deposited film formed on the substrate connected to one another.

Growing community of inventors

Urayasu, Japan

Masao Ueki