Tdk Corporation

Tokyo Shibaura Denki Kabushiki Kaisha

Masao Tezuka

Hiroshi Endo

Minoru Watanabe

Toshio Nishimura

Masao Asada

Mitsuhiro Oikawa

Naoyuki Hirate

Tsurahide Cho

Disclosed herein is an antenna device that includes a first molded substrate having first and second surfaces opposite to each other, a second molded substrate having third and fourth surfaces opposite to each other, a first electrode formed on the first surface of the first molded substrate, a feed electrode formed on the second surface of the first molded substrate so as to overlap the first electrode in a plan view, and a first ground electrode formed on the third surface of the second molded substrate. The first and second molded substrates overlap each other such that the second surface of the first molded substrate and the fourth surface of the second molded substrate face each other.

Antenna device

An on-chip antenna includes an integrated circuit chip, a reflective conductor, at least one first coupler, at least one patch antenna element, a connection, and at least one second coupler. The integrated circuit chip includes a semiconductor, has an active surface and a back surface opposed to each other, and has a semiconductor circuit. The reflective conductor is disposed above the back surface. The at least one first coupler is disposed between the back surface and the reflective conductor. The at least one patch antenna element is disposed above the reflective conductor. The connection couples the at least one patch antenna element and the at least one first coupler. The at least one second coupler is provided on the active surface to be electrically conductive to the semiconductor circuit, and is opposed to the at least one first coupler and in non-contact with the at least one first coupler.

On-chip antenna

Disclosed is method of recovering tantalum from silicon-containing tantalum scrap, which comprises dissolving said scrap in an inorganic acid, bringing the resulting solution into contact with an anionic exchange resin, followed by washing said anionic exchange resin with (a) a solution of 3 to 10 mol/l. of hydrofluoric acid or (b) a solution of strongly acidic medium containing 0.01 to 0.5 mol/l. of hydrofluoric acid and 1 to 6 mol/l. of a strong acid, and then washing the same with an aqueous solution of a mixture composed of hydrofluoric acid, aqueous ammonia and an ammonium salt.

Method of recovering tantalum from silicon-containing tantalum scrap

Disclosed is a method for surface treatment of phosphor particles which comprises forming a continuous film of silicon dioxide on the surface of each phosphor particle by treating the phosphor particle with a solution containing an aqueous solution of organic alkali and silicon dioxide dissolved therein.

Growing community of inventors

Tokyo, Japan

Masao Tezuka