Ebara Corporation

Masao Saitoh

Masahiro Hatakeyama

Hiroyuki Shinozaki

Katsunori Ichiki

Tsutomu Nakada

Kiwamu Tsukamoto

Yasushi Toma

Hidenao Suzuki

Yukio Fukunaga

Masahito Abe

A chemical vapor deposition apparatus for depositing a thin film of highly dielectric materials for giga-capacity memory devices can reliably clean reaction products formed within the deposition chamber without sacrificing the production efficiency. The apparatus comprises a hermetic deposition chamber containing a substrate holding section for supporting a substrate, and a gas supply head disposed opposite to the substrate holding section for directing a gaseous feed material onto the substrate. There are provided a trapping member supporting device for supporting a trapping member so as to be opposite to a target cleaning area inside the deposition chamber, and a plasma generation device for generating a plasma between the target cleaning area and the trapping member supported by the trapping member supporting device.

Chemical vapor deposition apparatus and cleaning method thereof

A reactant gas ejector head enables a process gas mixture of a uniform concentration and composition to be delivered to the surface of a substrate in a stable and uniform thermodynamic state by preventing premature reactions to occur along the gas delivery route. The reactant gas ejector head comprises an ejection head body having a back plate and a nozzle plate for defining a gas mixing space therebetween. The nozzle plate has numerous gas ejection nozzles. A gas supply pipe is communicated with the ejection head body through a center region of the back plate so as to separately introduce at least two types of gaseous substances into the mixing space. Gas distribution passages are formed between the back plate and the nozzle plate in such a way as to guide the at least two types of gaseous substances from the gas supply pipe to be directed separately towards peripheral regions of the gas mixing space.

Reactant gas ejector head

A fast atomic beam (FAB) source is capable of generating fast atomic beams having characteristics of a high beam density, precise directionality, and a wide range of controlled out put energy levels. The FAB source includes a discharge tube, an inductively coupled plasma generator for generating gas plasma in the discharge tube from gas introduced therein, positive and negative electrodes for accelerating ions to control the beam for a variety of energy levels. The negative electrode has a beam control opening for generating a FAB, wherein directionability, neutralization factor, and other FAB characteristics are controlled.

Fast atomic beam source with an inductively coupled plasma generator

Growing community of inventors

Fujisawa, Japan

Masao Saitoh