Rohm Co., Ltd.

Masao Saito

Katsuhiko Yoshihara

Takukazu Otsuka

Keiji Okumura

Toshikazu Takei

Takashi Sawada

A power module apparatus includes a power module having a package configured to seal a perimeter of a semiconductor device, and a heat radiator bonded to one surface of the package; a cooling device having a coolant passage through which coolant water flows, in which the heat radiator is attached to an opening provided on a way of the coolant passage, wherein the heat radiator of the power module is attached to the opening of the cooling device so that a height (ha) and a height (hb) are substantially identical to each other. The power module in which the heat radiator is attached to the opening formed at the upper surface portion of the cooling device can also be efficiently cooled, and thereby it becomes possible to reduce degradation due to overheating.

Power module apparatus, cooling structure, and electric vehicle or hybrid electric vehicle

A power module apparatus includes a power module having a package configured to seal a perimeter of a semiconductor device, and a heat radiator bonded to one surface of the package; a cooling device comprising a coolant passage through which coolant water flows, in which the heat radiator is attached to an opening provided on a way of the coolant passage, wherein the heat radiator of the power module is attached to the opening of the cooling device so that a height (ha) and a height (hb) are substantially identical to each other. The power module in which the heat radiator is attached to the opening formed at the upper surface portion of the cooling device can also be efficiently cooled, and thereby it becomes possible to reduce degradation due to overheating.

A power module apparatus () comprises: a power module (A) comprising a package () configured to seal a perimeter of a semiconductor device, and a heat radiator () bonded to one surface of the package; a cooling device () comprising a coolant passage () through which coolant water flows, in which the heat radiator is attached to an opening () provided on a way of the coolant passage, wherein the heat radiator () of the power module (A) is attached to the opening () of the cooling device () so that a height (ha) and a height (hb) are substantially identical to each other. The power module in which the heat radiator is attached to the opening formed at the upper surface portion of the cooling device can also be efficiently cooled, and thereby it becomes possible to reduce degradation due to overheating.

The power module includes: a first metallic circuit pattern, a semiconductor device disposed on the first metallic circuit pattern; a leadframe electrically connected to the semiconductor device; and a stress buffering layer disposed on an upper surface of the semiconductor device, and capable of buffering a CTE difference between the semiconductor device and the leadframe. The leadframe is connected to the semiconductor device via the stress buffering layer, a CTE of the stress buffering layer is equal to or less than a CTE of the leadframe, and a cross-sectional shape of the stress buffering layer is L-shape. There is provided: the power module capable of realizing miniaturization and large current capacity, and reducing cost thereof by using leadframe structure, and capable of reducing a variation in welding and improving a yield without damaging a semiconductor device; and a fabrication method for such a power module.

Power module and fabrication method for the same

A power module includes: an insulating layer; a first metallic plate disposed on the insulating layer; a first semiconductor chip disposed on the first metallic plate; a first adhesive insulating layer and a second adhesive insulating layer disposed on the first metallic plate; a first metallic land for main electrode wiring disposed on the first adhesive insulating layer; and a first metallic land for signal wiring disposed on the second adhesive insulating layer. There can be provided a power module having reduced cost, reduced warpage of the whole of a substrate, stabilized quality, and improved reliability; and a fabrication method for such a power module.

A power module includes: an insulating layer; a leadframe disposed on the insulating layer; a semiconductor chip disposed on the leadframe; and a mold resin formed so as to cover the semiconductor chip and at least a part of the metal layer, wherein a groove into which a part of the insulating layer is inserted is formed on a surface of the leadframe facing the insulating layer. Accordingly, there can be provided the power module with improved reliability so that the insulating layer and the leadframe may be hardly deviated from each other even if external force is applied thereon; and a fabrication method for such a power module.

A power module includes: an insulating layer; a leadframe (metal layer) disposed on the insulating layer; a semiconductor chip disposed on the leadframe; and a mold resin formed so as to cover the semiconductor chip, at least a part of the metal layer, and at least a part of the insulating layer, wherein the insulating layer includes a relatively-soft insulating layer disposed at a side of the leadframe and a relatively-hard insulating layer disposed at an opposite side of the leadframes. Accordingly, there can be provided the power module with improved cooling capability and improved reliability, and the fabrication method for such a power module.

A semiconductor device includes: a first output unit configured to output a first phase; a second output unit configured to output a second phase different from the first phase, the second output unit being disposed to be stacked on the first output unit; and a controller configured to control the output units.

Semiconductor device

A power module () includes a first high-side main-circuit MOSFET () and a second low-side main-circuit MOSFET () connected in series thereto. The series circuit of the MOSFETs () is connected in parallel to a power source (). A first short-circuit MOSFET () is connected between the gate and the source of the first main-circuit MOSFET (). A second short-circuit MOSFET () is connected between the gate and the source of the second main-circuit MOSFET ().

Growing community of inventors

Kyoto, Japan

Masao Saito