Lapis Semiconductor Co., Ltd.

Oki Electric Industry Co., Ltd.

Oki Semiconductor Co., Ltd.

Inter-university Research Institute Corporation High Energy Accelerator Research Organization

Masao Okihara

Hiroki Kasai

Yasuo Arai

Hiroaki Sano

Toru Mori

Shinobu Takehiro

Hidetsugu Uchida

Atsuhiko Okada

Kenichiro Kusano

Michihiro Ebe

Tomohiro Okamura

A reference electrode is provided with an accommodation portion that is provided with a tube-shaped lead-out portion that can guide an accommodated internal liquid; a liquid junction portion that is connected to an end of the lead-out portion, and that allows the internal liquid to seep out; a liquid dripping portion that has a first end connected to the liquid junction portion, that has a second end that protrudes into the accommodation portion, and that guides the internal liquid to the liquid junction portion; and an internal electrode having at least a portion that is positioned further towards the first end side than the second end of the liquid dripping portion.

Reference electrode

A measurement device including: an ion-sensitive element; a reference electrode disposed in a state in which a measurement subject is interposed between the reference electrode and the ion-sensitive element; and a controller configured to: establish a first state at a predetermined interval, the first state being a state in which a current flows at the ion-sensitive element, and establish a second state within each period after the first state has been established and before the first state is next established, the second state being a state in which a potential difference between the ion-sensitive element and the reference electrode is greater than a potential difference between the ion-sensitive element and the reference electrode in the first state.

Measurement device and measurement method

There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.

Semiconductor device having SOI substrate and first and second diffusion layer

A semiconductor device includes a substrate having a main surface, the main surface including a first region and a second region, and an element separation region that disposed on a boundary between the first region and the second region, a first filter disposed on the main surface in the first region, and a second filter disposed on the main surface in the second region, the first filter and the second filter overlapping each other in the element separation region in a plan view of the semiconductor device.

Semiconductor device and manufacturing method of semiconductor device

A semiconductor device includes first and second photo-electric conversion elements, each having a light-receiving surface, disposed adjacent to each other, each outputting a light current that is a current corresponding to an intensity of received light, a first filter disposed on the light-receiving surface of the first photo-electric conversion element, a second filter disposed on the light-receiving surface of the second photo-electric conversion element, and a third filter disposed on the light-receiving surface of the second photo-electric conversion element and being in contact with the second filter, one end of the second filter and one end of the third filter overlapping one end of the first filter at a vicinity of a boundary between the first photo-electric conversion element and the second photo-electric conversion element.

Semiconductor device having SOI substrate

A semiconductor device that includes: a pair of photoelectric transducers that output photocurrent that accords with an intensity of received light; and a first filter film that is provided to a light incidence side of one out of the pair of photoelectric transducers, that is configured by alternatingly stacking high refractive index layers and low refractive index layers having mutually different refractive indexes, and that transmits one out of either UV-A waves or UV-B waves included in ultraviolet rays with a higher transmittance than the other out of the UV-A waves and the UV-B waves.

Semiconductor device and semiconductor device manufacturing method

Method for manufacturing semiconductor device including a MOS-type transistor

An SOI substrate includes a semiconductor base; a semiconductor layer formed over the semiconductor base; and a buried insulating film which is disposed between the semiconductor base and the semiconductor layer, so as to electrically isolate the semiconductor layer from the semiconductor base, where the buried insulating film contains a nitride film.

SOI substrate, method of manufacturing the SOI substrate, semiconductor device, and method of manufacturing the semiconductor device

Semiconductor device and method for manufacturing semiconductor device

In a semiconductor device of a silicon on insulator (SOI) structure having uniform transistor properties, a first distance between a gate electrode forming position of an N type transistor and an end of a P type semiconductor region is greater than a second distance between a gate electrode forming position of the P type transistor and an edge of the N type semiconductor region.

Semiconductor device with selected transistor properties

An ultraviolet sensor has an ultraviolet detection diode having a depletion regionformed in an Si layeron an insulating layer, an interlayer insulating filmformed on the ultraviolet detection diode, and a wiringformed on the interlayer insulating film. An incident angle &#x3b8; (&#xb0;) of an incident light entering into the depletion regionand a film thickness T(nm) of the depletion regionsatisfy the following formula (1), which is also shown in FIG./sin &#x3b8;&#x2266;100&#x2003;&#x2003;(Formula 1)

Ultraviolet sensor

There is provided a method of fabricating a semiconductor device having plural light receiving elements, and having an amplifying element, the method including: a) forming an active region on the semiconductor substrate for configuring the amplifying element; b) forming a light receiving element region on the semiconductor substrate for forming the plural light receiving elements, with the active region acting as a reference for positioning; c) implanting an impurity into the light receiving element region; d) repeating the process b) and the process c) a number of times that equals a number of diffusion layers in the light receiving element region; e) after implanting the impurity, performing a drive-in process to carry out drive in of the semiconductor substrate; and f) the process e), forming an amplifying element forming process by implanting an impurity in the active region.

Method of fabricating semiconductor device

A sensor includes a substrate provided with a circuit element forming region and a photodiode forming region, the substrate having a silicon substrate, an insulating layer on the silicon substrate, and a silicon layer on the insulating layer; a photodiode in the silicon layer; a circuit element in the silicon layer; a first interlayer insulating film formed over the silicon layer; a first light-shielding film on the first interlayer film and having an opening in the photodiode forming region; and a first inter-region light-shielding plug arranged between the two regions, for connecting the silicon substrate and the first light-shielding film.

Semiconductor optical sensor having an inter-region light-shielding plug

A semiconductor device manufacturing method which sequentially forms a gate oxide film and gate electrode material over a semiconductor layer of an SOI substrate and patterns the material into gate electrodes. The method further comprises the steps of forming sidewalls made of an insulator to cover side surfaces of the gate electrode; ion-implanting into the semiconductor layer on both sides of the gate electrode to form drain/source regions; partially etching the sidewalls to expose upper parts of the side surfaces of the gate electrode; depositing a metal film to cover the tops of the drain/source regions and of the gate electrode and the exposed upper parts of the side surfaces of the gate electrode; and performing heat treatment on the SOI substrate to form silicide layers respectively in the surfaces of the gate electrode and of the drain/source regions.

Growing community of inventors

Tokyo, Japan

Masao Okihara