Mitsubishi Denki Kabushiki Kaisha

Sony Corporation

Masao Oda

Yoshimi Kinoshita

Hajime Matsumura

Toshiyuki Kobayashi

Tatsuya Iwasa

Tsutomu Imoto

Kenji Yoshizawa

Michio Fujiwara

Takayuki Inoue

Masahiro Hayama

Yoshiyuki Goto

Kazuo Yoshida

Masao Koshinaka

Tomoyuki Kanda

Takao Morisaki

Katsuhisa Kitano

Yasunori Kurahashi

Hideho Taguchi

Toyomi Osige

Takasuke Umemoto

Fusako Tanaka

A dye-sensitized photoelectric conversion apparatus having enhanced energy conversion efficiency and a production method thereof are provided. The dye-sensitized photoelectric conversion apparatus which has semiconductor layer () containing a photosensitizing dye () and is constituted such that a charge carrier generated by allowing light to incident in the photosensitizing dye () is drawn out through the semiconductor layer (), in which the semiconductor layer () is constituted by a plurality of regions (A toD) having different energy levels from one another of a passage through which the charge carrier is transferred. Further, the plurality of regions (A toD) are arranged such that the energy levels are reduced stepwise and/or continuously in the direction of drawing the charge carrier out.

Dye-sensitized photoelectric conversion apparatus and manufacturing method thereof

A rectifier device, based on a novel operation principle completely different from that of conventional molecular electronic devices, is made by coupling two or more molecules or molecule arrays () at certain joints. By making use of the phenomenon that transfer of an excited state or exciton from one molecule or molecule array to another molecule or molecule array coupled thereto progresses asymmetrically due to spatial asymmetry at the joint, a rectifying function related to the transfer of the excited state of exciton is obtained. Additionally, by controlling the rectification property in addition to the rectification function, an ion sensor device or a switching device is made. A resistor device may be inserted in the rectifier device.

Molecular device, molecule array, rectifier device, rectifying method, sensor device, switching device, circuit device, logical circuit device, operational device and information processing device

Molecular rectifier device

A washing apparatus is compact as well as easy to handle, with which a user can wash down dirt effectively in a short time. Washing liquid supplied from the washing liquid supplying means is made in the form of high-speed jet liquid by a high-speed jet stream spouting means. The high-speed jet liquid is spouted from the aperture of the first cover to wash down dirt by the impact given by the high-speed jet liquid. A washing object is dewatered by gas spouted from the aperture by a blowing means. The high-speed jet stream spouting means is comprised of a rotating object having a plurality of radial shape flow paths extending from a center portion to a circumference of the rotating object, and a liquid supplying portion for supplying washing liquid to a central portion of the radial shape flow paths. A rotating means rotates the rotating object so that washing liquid supplied in the radial shape flow paths is accelerated in the direction of a circumference as well as a radius of the rotating object by rotation. The accelerated washing liquid is spouted from an aperture in the form of high-speed jet liquid.

Washing apparatus

A semiconductor film production apparatus includes a reaction vessel for containing a substrate and including a gas supply port for supplying a reaction gas to the vessel, a gas discharge port for discharging the reaction gas from the vessel after reaction, and a light-transmitting glass window; a light source disposed outside the reaction vessel for irradiating a substrate in the reaction vessel through the light-transmitting glass window to heat the substrate; a cylindrical substrate holder disposed in the reaction vessel for holding the substrate with a first surface facing the light source and a second surface, opposed to the first surface, exposed to the reaction gas; a ring plate having a central opening with an area smaller than the substrate and an outside diameter dividing the reaction vessel into two compartments, the ring plate contacting the first surface of the substrate; a carrier gas supply port for introducing a carrier gas between the substrate and the light-transmitting glass window; and a reaction gas supply nozzle disposed in the substrate holder connected to said gas supply port and opposing the second surface of the substrate.

Apparatus for producing semiconductor film

Method of forming a thin film on a substrate by CVD (Chemical Vapor Deposition) method and an apparatus therefor, wherein a first gas is supplied from a reaction gas supply port in a reaction chamber, and an active species produced by exciting a second gas are supplied from an active species supply port in the reaction chamber, and a thin film is formed on the substrate by reaction of the first reaction gas and the active species, since a metal porous plate having a number of small holes is installed close to the substrate between the active species supply port and a heater so as to enclose at least the substrate and the active species supply port, the precursor forming reaction is limited to position on the surface of the substrate and diffusion of the precursor to the outer circumferential portion and the inner wall of the reaction chamber is prevented, thereby the low dust producing process to advance the thin film forming reaction is obtained without generating the reaction product of fine particle form which may cause the dust producing.

Method and apparatus for forming thin film

An apparatus for forming a thin film on a substrate by bringing a first gas and a second gas into reaction with each other in a reaction chamber near the surface of the substrate in the reaction chamber. The apparatus has a plasma generating chamber disposed adjacent to the reaction chamber for generating a plasma of the first gas in a predetermined direction. A first gas inlet is provided at the boundary between the plasma generating chamber and the reaction chamber and formed to extend in the predetermined direction, while a second gas inlet is provided in the vicinity of the first gas inlet and extended in the predetermined direction. The apparatus further has a first gas supplying device for introducing the first gas into the plasma generating chamber and for introducing the first gas activated by a plasma in the plasma generating chamber into the reaction chamber through the first gas inlet, and second gas supplying device for supplying the second gas into the reaction chamber through the second gas inlet. A first flow settling device having plates disposed transverse to the flow of the first gas is positioned between the first gas inlet and plasma chamber. A second flow settling device may be located between the second gas supplying device and second gas inlet.

Thin film forming apparatus having a gas flow settling device

Apparatus for forming a thin film on a substrate surface by a CVD (Chemical Vapor Deposition) method which includes diffusing pipes for diffusing and supplying a first reactive gas, and uniformizing plates for supplying uniformly an active species formed through excitation of a second reactive gas. The first reactive gas and the active species are mixed uniformly with each other, and the resultant uniform mixture is supplied uniformly to the substrate surface, whereby a uniform film deposition rate is obtained in a reaction zone in which the thin film is formed, and a uniform thin film is formed over the entire substrate surface even when the area of the substrate surface is large.

Apparatus for forming thin film

Semiconductor producing apparatus

Growing community of inventors

Tokyo, Japan

Masao Oda