Anritsu Corporation

Masao Nakamura

Setsuo Kodato

The electric resistor of this invention is comprised of a Si-Ge alloy thin film containing amorphous and microcrystal phases which serve as an electric resistance, thereby keeping the resistance value ratio substantially constant and uninfluenced by frequency changes which range from d.c. to 32 GHz. In addition, the power detector of this invention uses a thermocouple which is made by connecting the conductor film with the above-mentioned alloy thin film having great thermoelectric power. The thermocouple is provided with beam lead electrodes at cold junction areas to thereby produce large temperature differences between the hot and cold junctions, so that the thermocouple is provided with a sufficient thermal gradient to detect very low power with high accuracy.

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Hatano, Japan

Masao Nakamura