Denso Corporation

Nippondenso Co., Ltd.

University of Tsukuba

Kyodo Yushi Co., Ltd.

Masao Nagakubo

Kazukuni Hara

Shoichi Onda

Harumi Suzuki

Tadashi Hattori

Shinji Yoshihara

Seiji Fujino

Takashi Kurahashi

Fusao Hirose

Fumio Ohara

Makoto Watanabe

Shozo Ikejima

Makoto Hayama

Hitoshi Kuno

Yasuo Kitoh

Kouji Senda

The invention provides a grease composition containing a thickener and a base oil, wherein the base oil contains (a) a hydrocarbon oil extracted fromand/or (b) a hydrocarbon oil obtainable by hydrogenating the hydrocarbon oil (a).

Lubricating grease composition

A silicon carbide manufacturing device includes a graphite crucible, in which a seed crystal is disposed, a gas-inducing pipe coupled with the graphite crucible, and an attachment prevention apparatus. The gas-inducing pipe has a column-shaped hollow part, through which a source gas flows into the graphite crucible. The attachment prevention apparatus includes a rod extending to a flow direction of the source gas, and a revolving and rotating element for revolving the rod along an inner wall of the gas-inducing pipe while rotating the rod on an axis of the rod in parallel to the flow direction.

Silicon carbide manufacturing device and method of manufacturing silicon carbide

A crucible, which has first member and second cylindrical body, is disposed in a lower chamber. A pedestal is disposed inside the first member, and a seed crystal is fixed to the pedestal. A second heat insulator is provided between an inlet conduit and a crucible. A first heat insulator is provided at a halfway portion of the inlet conduit. With these heat insulators, a temperature gradient occurs in the inlet conduit at a portion thereof that is closer to the crucible. A mixture gas is introduced into the crucible. The mixture gas is heated up gradually when passing through the inlet conduit and is introduced into the crucible to form SiC single crystals in high quality.

Manufacturing method for producing silicon carbide crystal using source gases

Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same

A crucible has first member and second cylindrical body, and is disposed in a lower chamber. The fist member is disposed in the second cylindrical body so as to define a gas flow path formed therebetween as a gap. A pedestal is disposed inside the first member. A seed crystal is fixed to the pedestal. SiC single crystals are formed on the pedestal by introducing a mixture gas through an inlet conduit. During growth of the SiC single crystals, conductance in introduction of the mixture gas into the crucible is larger than that in exhaust of the mixture gas, so that pressure of the mixture gas in the crucible is larger than that of the mixture gas after exhausted from the crucible.

A sensing element is formed on a silicon (Si) substrate and covered with a cap. The cap has a leg portion having a titanium layer and a gold layer formed in that order on the lower surface thereof. The silicon substrate has an Si bonding frame at a position corresponding to the leg portion. When bonding the Si bonding frame of the silicon substrate and the leg portion of the cap, the titanium layer deoxidizes a naturally oxidized silicon layer formed on the Si bonding frame, whereby the silicon substrate and the cap can be uniformly bonded together with an Au/Si eutectic portion interposed therebetween. In this case, the Au/Si eutectic portion includes a titanium oxide accompanying the deoxidization of the naturally oxidized silicon layer.

Semiconductor device including eutectic bonding portion and method for manufacturing the same

An organic EL element has an anode made of transparent conductive material such as ITO and a cathode made of metallic material such as Al. Further, a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer are disposed between the anode and the cathode. The cathode is composed of a thin film layer and a thick film layer partially overlapping with the thin film layer. The thin film layer can transmit light and the thick film layer can suppress an increase in wiring resistance of the cathode.

Organic element with metallic cathode

Nitrogen atoms on the surface of a first body are terminated by hydrogen atoms after the surfaces of the first body and a second body to which it is to be bonded are cleaned. The surface of the first body terminated by the hydrogen atoms and the surface of the second body are bonded to each other so that hydrogen bonds are formed between the nitrogen atoms and the bonded hydrogen atoms on the surface of the first body and the atoms on the surface of the second body. Using these hydrogen bonds, the surface of the first body and the surface of the second body are strongly bonded to each other. When the surface of the second body is formed with nitride or oxide, strong hydrogen bonds of N--H .sup.- - - N or N--H .sup.- - - O are formed between the first body and the second body. Thus, the method does not require bonding under high temperature or high pressure.

Method for direct bonding nitride bodies

Bodies of at least one material are held in a contacting holder 12 in a vacuum chamber. The surfaces of the bodies are cleaned by a low energy ion etching. Water vapor from a pure water bottle is supplied through a nozzle as a water molecule beam so that water molecules and hydroxide groups are chemically adsorbed on the surfaces of the bodies. A plasma beam or microwaves are applied to the surfaces of the bodies to remove the water molecules and leave only hydroxide groups remaining on the surfaces. The holder is operated to bring the surfaces of the bodies into contact with each other, to thereby obtain direct bonding of the bodies.

Growing community of inventors

Nishikamo-gun, Japan

Masao Nagakubo