Sharp Kabushiki Kaisha Corporation

Sharp Laboratories of America, Inc

Sumitomo Electric Industries, Limited

Semiconductor Energy Laboratory Co., Ltd.

Masao Moriguchi

Yutaka Takafuji

Yohsuke Kanzaki

Yasumori Fukushima

Yudai Takanishi

Takatsugu Kusumi

Koji Mori

Apostolos T Voutsas

Tsuyoshi Inoue

Yuichi Saito

Yosuke Kanzaki

Hidekazu Miyairi

Kenji Saito

Mark Albert Crowder

Naoki Makita

Takashi Iwasaki

Yasuaki Iwase

Kazuhide Tomiyasu

Mayuko Sakamoto

Tokuo Yoshida

Michiko Takei

Yoshiki Nakatani

Hiroyuki Konaka

Steve Droes

Toshinari Sasaki

Yasuhiro Jinbo

Kenji Nakanishi

Tetsuya Okamoto

Sachiaki Tezuka

Hiroshi Matsukizono

Kazumasa Toya

Yoshiya Abiko

Yuhichi Saitoh

Yasuhiro Mitani

Steven Roy Droes

Kazushi Iyatani

Hiromi Sakamoto

Tetsuo Fukaya

Takashi Ienaga

Akihiko Kohno

A photovoltaic apparatus includes: a power generation part; an angle changeable mechanism configured to support the power generation part so as to be able to change an elevation of the power generation part; a post configured to support the power generation part and the angle changeable mechanism; and a hinge mechanism configured to support the post so as to be able to change an angle of the post relative to an installation surface for the photovoltaic apparatus.

Solar power generation device, method for installing solar power generation device, and method for operating solar power generation device

A mounting structure for a photovoltaic module, the photovoltaic module including: a plurality of power generating elements; and a housing having a metal bottom plate on which the plurality of power generating elements are arrayed, and a resin side wall frame standing along an outer edge of the bottom plate, the mounting structure including: a support plate having a support face configured to be in contact with an outer face of the bottom plate to support the photovoltaic module; a washer to be disposed on one face which is an inner face of the bottom plate or a face, of the support plate, at a side opposite to the support face; and a rivet having a shank portion and a head, the shank portion being configured to be passed through the support plate and the bottom plate to be inserted into the washer, the head formed at one end portion of the shank portion, the rivet being configured to sandwich and fasten the support plate and the bottom plate between the washer and the head by an other end portion of the shank portion being deformed so as to have an enlarged diameter.

Mounting structure for photovoltaic power generation module, photovoltaic power generation module, photovoltaic power generation panel, and photovoltaic power generation device

Casing for concentrator photovoltaic module

Concentrator photovoltaic unit

A TFTis formed on a glass substrate, and a flattening resin filmcovering the TFTis formed. Furthermore, a moisture-proof protective filmcovering the entire surface of the flattening resin filmis formed. For the protective film, a SiOfilm, a SiN film, a SiON film, or a stacked film thereof is used. The edge surfaces of the flattening resin filmare disposed on the inner side of or under a seal, and are formed in a tapered shape. By this, the entry of moisture into the flattening resin filmis prevented, preventing display degradation. This effect becomes noticeable in a display device including an oxide semiconductor TFT.

Display device

A thin film transistor includes a gate electrode (), a gate insulating film () covering the gate electrode (), a semiconductor layer () made of an oxide semiconductor and provided on the gate insulating film (), a source electrode () and a drain electrode () provided on the semiconductor layer () via easily reducible metal layers () and spaced apart from each other, with a channel region (C) interposed therebetween, a conductive region (E) provided in the semiconductor layer (), and a diffusion reducing portion () provided in the semiconductor layer (), for reducing diffusion of the conductive region (E) into the channel region (C).

Thin film transistor, display panel, and method for fabricating thin film transistor

A semiconductor device according to the present invention includes: a gate electrode () of a thin film transistor () and an oxygen supply layer (), the gate electrode () and the oxygen supply layer () being formed on a substrate (); a gate insulating layer () formed on the gate electrode () and the oxygen supply layer (); an oxide semiconductor layer () of the thin film transistor (), the oxide semiconductor layer () being formed on the gate insulating layer (); and a source electrode (S) and a drain electrode () of the thin film transistor (), the source electrode (S) and the drain electrode () being formed on the gate insulating layer () and the oxide semiconductor layer ().

Semiconductor device and display apparatus

A method of manufacturing a TFT substrate includes: forming a gate electrode () and a gate insulating film () on a substrate (); forming a source electrode () and a drain electrode () at a gap from each other on the gate insulating film (), and forming a drain connection part (); forming, after the step of forming the source electrode and the drain electrode, an oxide semiconductor layer () that contains a channel portion connecting the source electrode () to the drain electrode () and that contains an additional portion () covering the drain connection part (); oxidizing a surface of the oxide semiconductor layer (); forming a contact hole () in an insulating film () that covers the oxide semiconductor layer; removing a portion of the additional portion () of the oxide semiconductor layer that is located inside the contact hole (); and forming a conductive layer () that electrically connects the drain connection part () that has been exposed.

TFT substrate and method for manufacturing same

A manufacturing method of a microcrystalline silicon film includes the steps of forming a first microcrystalline silicon film over an insulating film by a plasma CVD method under a first condition; and forming a second microcrystalline silicon film over the first microcrystalline silicon film under a second condition. As a source gas supplied to a treatment chamber, a deposition gas containing silicon and a gas containing hydrogen are used. In the first condition, a flow rate of hydrogen is set at a flow rate 50 to 1000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 67 to 1333 Pa inclusive. In the second condition, a flow rate of hydrogen is set at a flow rate 100 to 2000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 1333 to 13332 Pa inclusive.

Microcrystalline silicon film, manufacturing method thereof, semiconductor device, and manufacturing method thereof

A TFTincludes a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, a drain electrode, etc. The semiconductor layeris comprised of a metal oxide semiconductor (IGZO), and has a source portionthat contacts the source electrode, a drain electrodethat contacts the drain electrode, and a channel portionthat is located between the source and drain portions. A reduced regionis formed at least in the channel portionof the semiconductor layer, and the reduced regionhas a higher content of a simple substance of a metal such as In than the remaining portion of the semiconductor layer

Thin film transistor

A semiconductor device of the present invention includes: a lower electrode (); a contact layer () including a first contact layer (), a second contact layer () and a third contact layer () overlapping with a semiconductor layer (); and an upper electrode () including a first upper electrode (), a second upper electrode () and a third upper electrode (). The second contact layer () includes a first region (), and a second region () separate from the first region (), and the second upper electrode () is directly in contact with the semiconductor layer () in a region between the first region () and the second region () of the second contact layer ().

Semiconductor device

A photosensor element is provided with a gate electrode disposed on an insulating substrate, a gate insulating film disposed so as to cover the gate electrode, a semiconductor layer disposed on the gate insulating film so as to overlap the gate electrode, and a source electrode and a drain electrode provided on the semiconductor layer so as to overlap the gate electrode and so as to face each other. The photosensor element has the semiconductor layer provided with an intrinsic semiconductor layer in which a channel region is defined and an extrinsic semiconductor layer that is laminated on the intrinsic semiconductor layer such that the channel region is exposed. The extrinsic semiconductor layer protrudes from the drain electrode on the side close to the channel region.

Photosensor element, photosensor circuit, thin film transistor substrate, display panel, and method for manufacturing photosensor element

Disclosed is a photosensor element that is provided with a gate electrode () disposed on an insulating substrate (), a gate insulation film () disposed so as to cover the gate electrode (), a semiconductor layer () disposed on the gate insulating film () so as to overlap the gate electrode (), and a source electrode () and a drain electrode () provided on the semiconductor layer () so as to overlap the gate electrode () and so as to face each other. The semiconductor layer () is provided with an intrinsic semiconductor layer () in which a channel region (C) is defined and an extrinsic semiconductor layer () that is laminated on the intrinsic semiconductor layer () such that the channel region (C) is exposed therefrom. The intrinsic semiconductor layer () is an amorphous silicon layer containing nanocrystalline silicon particles.

Photosensor element, photosensor circuit, thin-film transistor substrate, and display panel

A diodeincludes a gate electrode, a gate insulating layerprovided on the gate electrode, at least one semiconductor layerprovided on the gate insulating layerand which includes a first regionand a second region, a first electrodewhich is provided on the first regionand which is electrically coupled to the first regionand the gate electrode, and a second electrodewhich is provided on the second regionand which is electrically coupled to the second region. The at least one semiconductor layerincludes a channel regionwhich extends above the gate electrodewith the intervention of the gate insulating layertherebetween, and a resistor regionwhich does not extend above the gate electrode. When the diodeis in an ON state, an electric current path is formed between the first electrodeand the second electrode, the electric current path including the channel regionand the resistor region

The present invention provides a semiconductor substrate, which comprises a singlecrystalline Si substrate which includes an active layer having a channel region, a source region, and a drain region, the singlecrystalline Si substrate including at least a part of a device structure not containing a well-structure or a channel stop region; a gate insulating film formed on the singlecrystalline Si substrate; a gate electrode formed on the gate insulating film; a LOCOS oxide film whose thickness is more than a thickness of the gate insulating film, the LOCOS oxide film being formed on the singlecrystalline Si substrate by surrounding the active layer; and an insulating film formed over the gate electrode and the LOCOS oxide film. On this account, on fabricating the semiconductor device having a high-performance integration system by forming the non-singlecrystalline Si semiconductor element and the singlecrystalline Si semiconductor element on the large insulating substrate, the process for making the singlecrystalline Si is simplified. Further, the foregoing arrangement provides a semiconductor substrate and a fabrication method thereof, which ensures device isolation of the minute singlecrystalline Si semiconductor element without highly-accurate photolithography, when the singlecrystalline Si semiconductor element is transferred onto the large insulating substrate.

Semiconductor substrate, semiconductor device, and manufacturing methods for them

Growing community of inventors

Osaka, Japan

Masao Moriguchi