Kabushiki Kaisha Toshiba

Masao Mochizuki

Chiaki Takubo

Hiroshi Tazawa

Yoshiharu Tsuboi

MMIC elements are formed on the surface of a GaAs semiconductor substrate. Rectangular U grooves having V-shaped bottoms are formed on the bottom surface of the substrate up to the surface of the substrate under the electrode and ground terminals of the MMIC elements. MIM capacitors and coils are formed on the side walls of the grooves and the bottom surface of the substrate and are connected to the electrode and ground terminals. This arrangement provides the MIM capacitors with large capacitance and the coils with large inductance without increasing chip size.

Microwave integrated circuit (MIC) having a reactance element formed on

A semiconductor device, which uses a film carrier, comprises a semiconductor element with a plurality of terminals, a resin film with a first surface and a second surface, the film having a hole in which the semiconductor element is mounted, and a plurality of lead wires formed on the first surface of the resin film. Each lead wire has an inner lead, an intermediate lead and an outer lead. The inner lead is connected to a corresponding one of the terminals of the semiconductor element. The outer lead is connected to a corresponding external electrode. The intermediate lead is situated between the inner lead and the outer lead. At least said intermediate lead is formed on the first surface of the film. Each outer lead and that portion of the intermediate lead, which is close to the outer lead, is substantially on a level with the external electrode.

Growing community of inventors

Yokohama, Japan

Masao Mochizuki