Nec Corporation

Macma Co., Ltd.

Masao Mikami

Seiichi Shishiguchi

Tatsuya Suzuki

Hideo Kawano

Fumitoshi Toyokawa

Keiji Shiotani

Kazumi Takemura

Coffee dripper

In a method for forming a capacitor, after preparing a substrate having at least one device area thereon, an amorphous silicon film containing one type of dopant is formed on the device area. A mask layer comprising mask islands is formed and distributed on a surface of the amorphous silicon film. The surface of the amorphous silicon is dry-etched by using the mask layer as a selective etching mask to produce a jagged surface having a lot of protrusions. After forming the jagged surface, the amorphous silicon film is changed into a polycrystalline silicon film serving as a storage electrode. Finally, a dielectric film and then another storage electrode are formed sequentially on the jagged surface of the storage electrode.

Method for forming capacitor electrode having jagged surface

First, a metal layer is deposited on a silicon film surface to form a silicide layer in an interface between the silicon film and the metal layer. Subsequently, the metal layer is all removed by etching such that silicide islands are left on the surface of the silicon film, and then the exposed silicon film surface is dry-etched by using the silicide islands as a selective mask.

Method of forming silicon film having jagged surface

A chemical vapor deposition apparatus includes a reaction tube, a substrate-holder installed in the reaction tube, the substrate-holder holding a plurality of substrates in a vertical direction, surfaces of the substrates being held horizontally, a rotating-means for rotating the substrate-holder, a heating-means for heating the substrates, a first gas-supply nozzle tube installed vertically in the reaction tube, the first gas-supply nozzle tube having a first vertical gas-emission line of a plurality of first gas-emission holes aligned in a vertical direction, and a second gas-supply nozzle tube installed vertically in the reaction tube, the second gas-supply nozzle tube having a second vertical gas-emission line, a plurality of second gas-emission holes aligned in a vertical direction, a first gas-emitting-axis of the first gas-emission holes intersecting with a second gas-emitting-axis of the second gas-emission holes at a first intersection over the substrate, the first intersection of the first and second gas-emitting axes being deviated from the rotation center of the substrate-holder.

Chemical vapor deposition apparatus for obtaining high quality epitaxial

A gettering method has a step in which the back surface of a semiconductor substrate having the upper surface on which semiconductor device elements is to be formed, with a laser beam having a wavelength of 150 to 400 nm to introduce strain fields onto the back surface of the substrate. The energy density of the laser beam is from 0.5 to 10 J/cm.sup.2, and the irradiation pitch of the laser is 40 to 1500 .mu.m. The laser irradiation may be effected under the condition where an oxide film or a nitride film is formed on the back surface of the semiconductor substrate, or after the back surface of the semiconductor substrate is blasted with fine particles of silica or the like.

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Tokyo, Japan

Masao Mikami