Matsushita Electric Works, Ltd.

Panasonic Electric Works Co., Ltd.

Other

Panasonic Corporation

Masao Kubo

Kenichiro Tanaka

Yuichi Uchida

Yoshimitsu Nakamura

Nobuyuki Asahi

Kazuo Kamada

Masanobu Ogasawara

Norio Yoshida

Tsutomu Ichihara

Nobuyoshi Koshida

Kenji Tsubaki

Shinji Matsui

Hiroshi Fukshima

Tomoaki Matsushima

Hirozo Imai

Masao Matsumoto

Akira Inoue

Jun Tatsuta

Mikio Masui

Shigenari Takami

Ikko Kuzuhara

Norio Yamada

Kyoji Tanaka

Shinobu Kida

Yosiyuki Uchinono

Isamu Miyamoto

Ken'ichiro Tanaka

Ryoichi Terauchi

Yoshiharu Sanagawa

Tsutomu Adachi

The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.

Electronic device and method for manufacturing same

In a light-emitting device and its manufacturing method, mounting by batch process with surface-mount technology, high light extraction efficiency, and low manufacturing cost are realized. The light-emitting devicecomprises semiconductor layers () of p-type and n-type nitride semiconductor, semiconductor-surface-electrodes () to apply currents into each of the semiconductor layers (), an insulating layerwhich holds the semiconductor layers (), and mount-surface-electrodes (). The semiconductor layers () has a non-deposited areawhere the other semiconductor layer () is not deposited. The insulating layer () has VIAwhich electrically connect the mount-surface-electrodesand the semiconductor-surface-electrodes (). In the manufacturing process, firstly. semiconductor layers () and semiconductor-surface-electrodes () are deposited on the transparent crystal substrate, and by using build-up process, insulating layer () and the mount-surface-electrodes () are formed, and secondly, VIAare formed. and finally, the transparent crystal substrate is separated to get light-emitting device (). Light can be extracted directly and efficiently from the semiconductor layers (). With the mount-surface-electrodes (), light-emitting device () can be mounted by using surface mount technology.

Semiconductor light-emitting device and its manufacturing method

In a light-emitting device and its manufacturing method, mounting by batch process with surface-mount technology, high light extraction efficiency, and low manufacturing cost are realized. The light-emitting device comprises semiconductor layers of p-type and n-type nitride semiconductor, semiconductor-surface-electrodes to apply currents into each of the semiconductor layers, an insulating layer which holds the semiconductor layers, and mount-surface-electrodes. The semiconductor layers has a non-deposited area where the other semiconductor layer is not deposited. The insulating layer has VIA which electrically connect the mount-surface-electrodes and the semiconductor-surface-electrodes. In the manufacturing process, firstly, semiconductor layers and semiconductor-surface-electrodes are deposited on the transparent crystal substrate, and by using build-up process, insulating layer and the mount-surface-electrodes are formed, and secondly, VIA are formed, and finally, the transparent crystal substrate is separated to get light-emitting device. Light can be extracted directly and efficiently from the semiconductor layers. With the mount-surface-electrodes, light-emitting device can be mounted by using surface mount technology.

Light-emitting device and its manufacturing method

A production method for producing a light-emitting devicein which a light-emitting layer at least comprised of a n-type substrate bearing layerand a p-type substrate bearing layeris layered on a transparent crystal substrateis provided with a step of forming a transfer layeron at least a part of the transparent crystal substrateor the light-emitting layer, which transfer layeris softened or set upon supplying an energy thereto; a step of pressing a moldformed with a minute unevenness structureagainst the transfer layerto transfer the minute unevenness structureto an outer surface of the transfer layer, and a step of forming a minute unevenness structurefor preventing multiple reflection based on the minute unevenness structuretransferred to the transfer layer

Method for producing a light emitting device

A semiconductor light emitting device gives a large radiation surface with an enhanced light radiating capability. A N-type GaN layer and a P-type GaN layer are stacked to define therebetween an interface where a light is generated upon application of voltage across the interface. A light guide on which the GaN layers are developed is utilized to give a wide radiation surface from which the light is given off. The radiation surface is formed with a refractor layer composed of an array of a first medium and a second medium which have individual refraction indexes different from each other and are arranged alternately across the radiation surface. Thus, the light guide can be best utilized to give a large radiation surface, yet formed with the refractor layer which reduces multiple reflections inside of the light guide for effectively passing or radiating the light transmitted through the light guide.

Light emitting device

A semiconductor-chip mounting substrate with a high degree of reliability of an electrical connection between a substrate and a semiconductor chip such as IC chips is provided. The substrate has at least one projection thereon, which is integrally molded with the substrate. A conductive layer is formed on the projection to obtain a first bump. The semiconductor chip has a terminal projecting as a second bump on its surface. The semiconductor chip is mounted on the substrate such that the first bump contacts the second bump. A required contact pressure between the first bump and the second bump is held by use of a pressure holding means.

Semiconductor-chip mounting substrate having at least one projection thereon and a pressure holding means

A method of forming a complex profile of uneven depressions in the surface of the ablatable workpiece by laser ablation with the use of a simple optics or a mask of a simple configuration. The method includes the steps of determining the complex profile in accordance with a particular feature to be given to the surface of the workpiece, then dividing the complex profile into more than one simple and regular waveform patterns of different characteristics, and irradiating an energy beam to the surface of the work piece to form the individual regular waveform patterns successively in an superimposed fashion by ablation in the surface of the workpiece. Accordingly, the desired complex profile can be easily obtained at an improved efficiency and at a moderate cost.

Method of forming a complex profile of uneven depressions in the surface of a workpiece by energy beam ablation

To form a hole for electrically connecting an upper conductor layer of an insulating layer of a printed wiring board and a lower conductor layer of the insulating layer in the insulating layer to expose the lower conductor layer to the hole bottom, when laser processing is executed for making the hole in the insulating layer using the printed wiring board comprising a treatment layer being placed between the lower conductor layer and the insulating layer for emitting an electromagnetic wave having a wavelength different from the wavelength of processing laser during the laser processing, change in a signal emitted from the treatment layer of the printed wiring board is measured to determine the remaining state of the insulating layer . The electromagnetic wave emitted in laser processing from the treatment layer placed between the lower conductor layer and the insulating layer rather than the reflection of laser of laser is used, so that the hole piercing the insulating layer can be detected precisely.

Processing method of printed wiring board

Method of forming a complex profile of uneven depressions in the surface

A circuit board has holes extending therethrough, and a solder layer disposed on a first side of the board. Terminals have been pushed through respective holes and into contact with the solder layer. The terminals have been welded to the first side of the circuit board in a fluxless manner by an irradiated energy beam.

Terminal-carrying circuit board

Load terminals are mounted to a circuit board by providing a solder layer on each lead terminal and on each conductive inner wall surface of respective holes formed in the circuit board. The lead terminals are thrust into respective holes, and contacting portions of the solder layers are irradiated with an energy beam, to produce sufficient heat for welding in a fluxless manner each lead terminal to the inner wall surface of its respective hole.

Method for mounting lead terminals to circuit board

An energy-beam welding method for two metal pieces is performed by bringing a cylindrical jig into axial engagement with one of the metal pieces at welding zone between them which are placed as joined, and irradiating an energy beam to the welding zone through the cylindrical jig in its axial direction, causing at least part of the energy beam reflected on inner peripheral wall of the cylindrical jig to be directed to the welding zone, whereby the metal pieces are mutually welded easily reliably.

Energy-beam welding method

An electric dry shaver with an inner blade block including a parallel array of semiconductor shearing blades and reciprocally driven along inner surface of a flexible thin outer blade mounted substantially in a semicylindrical shape of an outer blade block by means of a vibrating device through a reciprocal driving shaft detachably and resiliently connected to a connecting means pivotably provided in the inner blade block substantially at the center of gravity thereof. The connecting means is pivoted to the inner blade block at an axis passing substantially the center of gravity and intersecting at right angles longitudinal axis of the semicylindrical outer blade in a plane perpendicular to a plane including reciprocal directions of the driving shaft and the connection of the driving shaft to the connecting means is performed at a position adjacent the pivoting axis of the latter.

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Nara, Japan

Masao Kubo