Panasonic Intellectual Property Management Co., Ltd.

Panasonic Electric Works Co., Ltd.

Panasonic Corporation

Masao Kirihara

Koji Tsuji

Yoshiharu Sanagawa

Takanori Aketa

Youichi Nishijima

Hiroshi Yamanaka

Takaaki Yoshihara

Kazuo Gouda

Yoichi Nishijima

Yoshifumi Watabe

Taisuke Nishimori

Mitsuhiko Ueda

Takafumi Okudo

Yushi Nakamura

Takahiro Miyatake

Ryo Tomoida

Satoshi Hyodo

Motonobu Aoki

Hirofumi Kubota

Kazuyuki Yamae

Tsutomu Ichihara

Hirotaka Matsunami

Takanori Sugiyama

Yuichi Uchida

Hitomichi Takano

Shin Okumura

Yoshiharu Nagatani

Takami Okubayashi

Kanako Hoshino

Tomohiro Nakatani

An infrared sensor includes an infrared detecting device, a lens, a member, a gap and a spacer. The lens is disposed above the infrared detecting device. The member forms an external surface and includes a first opening having a maximum internal diameter. The gap is disposed between the member and the lens. The spacer is disposed between the member and the lens so as to form the gap, and that is directly contact with lens. The spacer has a circular inner periphery, in planar view, which has a larger internal diameter than the maximum internal diameter of the first opening of the member.

Infrared sensor

An infrared sensor includes: an infrared detecting device; a lens disposed above the infrared detecting device; an member that is disposed at a side of an upper surface of the lens and includes an opening; and a gap that intervenes between the member and the lens and has a wider range than the opening.

The present invention relates to an organic electroluminescence element in which a transparent first electrode, an organic light emitting layer, a second electrode are stacked on a translucent substrate in this order. The translucent substrate includes a moisture-proof layer facing the first electrode. An LR layer and an HR layer having a refractive index higher than a refractive index of the LR layer are situated between the moisture-proof layer and the first electrode in this order from the moisture-proof layer. An uneven structure is provided at an interface between the LR layer and the HR layer. A linear expansivity &#x3b1; of the moisture-proof layer, and a linear expansivity &#x3b2; of the LR layer, and a linear expansivity &#x3b3; of the HR layer satisfy a relation of &#x3b1;&#x2266;&#x3b2;&#x2266;&#x3b3;.

Organic electroluminescence element

The infrared sensor includes: an infrared sensor chip in which a plurality of pixel portions each including a temperature-sensitive portion formed of a thermopile is disposed in an array on one surface side of a semiconductor substrate; and an IC chip that processes an output signal of the infrared sensor chip. A package includes a package main body on which the infrared sensor chip and the IC chip are mounted to be arranged side-by-side, and a package cover that has a lens transmitting infrared rays and is hermetically bonded to the package main body. The package is provided therein with a cover member that includes a window hole through which infrared rays pass into the infrared sensor chip and equalizes amounts of temperature change of hot junctions and cold junctions among the pixel portions, the temperature change resulting from heating of the IC chip.

IR sensor package including a cover member and a sensor chip recessed into the package body

An infrared radiation element includes: a first insulating layer having heat insulating properties and electrically insulating properties; a heating element layer provided on the first insulating layer and configured to radiate infrared radiation when energized; and a second insulating layer provided on an opposite side of the heating element layer from the first insulating layer and having heat insulating properties and electrically insulating properties. The second insulating layer transmits the infrared radiation radiated from the heating element layer. The heating element layer has such a sheet resistance that impedance of the heating element layer matches impedance of space which is in contact with the second insulating layer.

Infrared radiation element

An infrared sensor module includes: an infrared sensor device disposed on a substrate and configured to receive infrared signals; a signal processing circuit device configured to process an output from the infrared sensor device; a metal case which is provided at a predetermined distance from the infrared sensor device, which includes a light incident window provided with an optical system for coupling an image on the infrared sensor device from external infrared signals, and which accommodates the infrared sensor device and the signal processing circuit device; and a sensor cover which is disposed between the infrared sensor device and the case and the signal processing circuit device, and which includes a light-transmitting portion configured to guide the infrared signals entering via the optical system to the infrared sensor device.

Infrared sensor module

The LED module comprises a flexible wiring substrate and surface mounting type LED packages. The flexible wiring substrate is formed at its surface with power supply terminals which comprises a first electrode pad and a second electrode pad, and is formed with a patterned wiring being electrically connected to the patterned wiring. The surface mounting type LED package comprises an LED chip and a mounting substrate. The mounting substrate is formed at its front surface with a recess, and its rear surface with a first connection electrode and the second connection electrode which are electrically connected to the first electrode pad and the second electrode pad, respectively when the mounting substrate is mounted on the flexible wiring substrate. The LED chip is disposed within the recess so as to receive the electrical current through the outside connection electrode and the power supply terminal.

LED module and lighting device using the same

Electroluminescence module

Panel board for electroluminescence module

To improve thermal insulation, a thermal infrared sensing element is carried on a sensor mount of a porous material and is spaced upwardly from a substrate by means of anchor studs projecting on the substrate. The sensor mount is formed with a pair of coplanar beams carry thereon leads extending from the sensing element. The leads and the beams are secured to the upper ends of the anchor studs to hold the sensing element at a predetermined height above the substrate. The beams and the leads are combined with each other by intermolecular adhesion such that the sensing element as well as the sensor mount can be altogether supported to the anchor studs.

An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate. A dielectric top layer covers the substrate to conceal the semiconductor device formed in the top surface of the substrate. The thermal infrared sensor carried on a sensor mount which is supported above the semiconductor device by means of a thermal insulation support. The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.

Infrared sensor unit and process of fabricating the same

A sensor system includes a sensor device () and an integrated circuit () for driving the device (). The device () includes a sensor body () of a silicon-based material, an upper sealing member () of a silicon-based material, and a lower sealing member () of a silicon-based material. The upper sealing member () and the lower sealing member () are joined together to cooperatively house the body () therewithin in an airtight manner. The device () and the circuit () are formed as a stacked body. The body () is electrically connected to a wiring pattern () of the circuit () through a conductive through-path () penetrating the upper sealing member () and a mounting electrode () provided on an outer surface of the upper sealing member (). The device () is connected to an MID substrate () through the circuit ().

Sensor device, sensor system and methods for manufacturing them

A method of manufacturing a semiconductor device. In this method, a concave portion is formed in one surface in the thickness direction of a primary base plate comprising a semiconductor substrate with a relatively large thickness dimension. Then, through-holes are formed by a reactive-ion etching process using as a mask an opening formed in an oxide film provided on the other surface in the thickness direction of the primary base plate. The opening has a narrow width in a region corresponding to the concave portion and a wide width in the remaining region. Thus, respective times necessary for the wide-width through-hole to penetrate through the primary base plate and necessary for the narrow-width through-hole to reach a bottom surface of the concave portion can be approximately equalized to complete the common etching process of the wide-width through-hole and the narrow-width through-hole approximately simultaneously.

Method of manufacturing semiconductor device

Disclosed is a gyro sensor, which comprises a primary base plate () and a support base plate () which are superimposed on one another. The primary base plate () is provided with a driven mass body () to be driven in such a manner as to be vibrated in a direction intersecting with a surface of the support base plate (), and a detection mass body () coupled with the driven mass body () through a drive spring () and adapted to be displaceable in a plane along the support base plate (). Two detection springs () extending in the arranging direction of the driven mass body () and the detection mass body () are connected, respectively, to opposite side of the detection mass body (), and the other ends of the detection springs () are connected together through a coupling segment (). A fixing segment () provided at a longitudinally intermediate portion of the coupling segment () is fixed to the support base plate (). A member formed by integrating the driven mass body () and the detection mass body () through the drive spring () is supported relative to the support base plate () by the detection springs () in a cantilever manner.

Growing community of inventors

Osaka, Japan

Masao Kirihara