L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des

L'air Liquide

L'air Liquide, Societe Anonyme L'etude Et L'exploitation Des Procedes

Masao Kimura

Juichi Arai

Jean-Marie Friedt

Pierre Claverie

Pierre Jalby

Frederic Rotman

Kohei Tarutani

Toshiyuki Tsukamoto

A process for reducing corrosion in a gas distribution network of ultra high purity gas or any part of said distribution network, including:

Process for distributing ultra high purity gases with minimized corrosion

The present invention provides a method of forming a free standing shape made of a material containing refractory metal, which entails providing a mandrel in a CVD enclosure, injecting a refractory halide gas and a reducing gas in the enclosure, reacting the gases in the enclosure to generate a material containing refractory metal, growing a layer of the material containing refractory metal on the mandrel and removing the mandrel to obtain the free standing shape, wherein the reducing gases is a silicon hydride gas or a mixture thereof.

Method of forming refractory metal free standing shapes

A thin copper film is formed by CVD, by (a) forming a gas stream containing a copper halide, followed by introducing said gas stream into a CVD reaction chamber having a heated catalytic metal filament arranged herein, (b) introducing hydrogen gas into the CVD reaction chamber for activation of said hydrogen gas by the heated catalytic metal filament, and (c) carrying out the reaction between the copper halide contained in the gas stream introduced in step (a) and the hydrogen activated in step (b) near the surface of a substrate arranged within the CVD reaction chamber so as to deposit a thin copper film of copper on the substrate surface.

Method of forming a thin copper film by low temperture CVD

The invention relates to a process of making a high purity silicide target comprising the steps of providing a substrate in a CVD enclosure, evacuating said enclosure up to a pressure P1 which is at least equal to or smaller than 5.times.10.sup.-5 Torr, heating the substrate at a temperature T1, which is at least equal to or greater than 20.degree. C., injecting in said enclosure a refractory metal halide MXm having a purity, as far as metallic impurities are concerned, greater than 5N (99,999%) and a silicon hydride having a purity, as far as metallic impurities are concerned, greater than 6N (99,9999%) setting the pressure in the enclosure between about 0.01 Torr and the atmospheric pressure while maintaining the temperature in the CVD enclosure between about 20.degree. C., growing a refractory metal silicide layer on the substrate to make a target having a purity, as far as metallic impurities are concerned, greater than 5N (99,99%), maintaining the temperature in the enclosure during said growing step at a value T2 which is not greater than T1, then withdrawing the target from said CVD enclosure.

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Tsuchiura, Japan

Masao Kimura