Hitachi, Ltd.

Casio Computer Co., Ltd.

Mitsubishi Materials Corporation

Other

Nec Corporation

Terumo Kabushiki Kaisha

Nippon Avionics Co., Ltd.

Hatachi Ltd

Tokyu Construction Co., Ltd.

Casio Computer., Ltd.

Kitamura Valve Seizo Kabushiki Kaisha

Hitachi, Ind.

Masao Kawamura

Yoichi Tamaki

Akihisa Uchida

Toshihiko Takakura

Shigeo Kuroda

Kazuhiro Ito

Katsumi Ogiue

Yuichi Ono

Makoto Morioka

Takahiro Fuse

Takeo Shiba

Kazuhiko Sagara

Mikinori Kawaji

Daisuke Okada

Susumu Takahashi

Hisashi Nakamura

Tohru Nakamura

Kanji Otsuka

Minoru Nagata

Toshiyuki Sakuta

Takahiro Okabe

Kazuya Ito

Ichiro Imaizumi

Minoru Usui

Makoto Homma

Takao Miyazaki

Kazuhiro Kurata

Koji Yamagishi

Saburo Kobayashi

Kunizo Sahara

Masanori Tazunoki

Toshikatsu Sudo

Hinoko Kurosawa

Toshihiko Satoh

Minoru Enomoto

Keiji Sasaki

Hiromitsu Mishimagi

Atsushi Shinboya

Hiroshi Okano

Kiichi Ueyanagi

Shinichi Matsui

Sachio Ishioka

Takato Murashita

Masakazu Okada

Ken Yoshino

Hidenori Tanabe

Shunji Kashiyama

Haruo Ono

Masaharu Kizaki

Manabu Ishikawa

Yukinori Hirasawa

Nobol Yabe

Daisuke Okaka

Munehiro Ohshiro

Tetsuhisa Minami

Tetsu Nishioka

Kazuyuki Odachi

A deposition apparatus for cutting tools with a coating film capable of depositing the coating film in an appropriate temperature condition is provided. The deposition apparatus includes: a deposition chamber in which a coating film is formed on the cutting tools; a pre-treatment chamber and post-treatment chamber, each of which is connected to the deposition chamber through a vacuum valve; and a conveying line that conveys the cutting tools from the pre-treatment chamber to the post-treatment chamber going through the deposition chamber, the in-line deposition apparatus using a conveyed carrier on which rods supporting cutting tools are provided in a standing state along a conveying direction. The deposition chamber includes: a deposition region; a conveying apparatus; a heating region; and a carrier-waiting region.

Film formation device for cutting tool provided with coating film, and film formation method for cutting tool provided with coating film

Film formation device for cutting tool provided with with coating film, and film formation method for cutting tool provided with coating film

A indwelling needle includes an outer needle, an outer needle hub with a flow path communicating with the inside of the outer needle and configured to connect a connector to the flow path, and a valve mechanism which opens and closes the flow path. The valve mechanism includes a valve element in the middle of the flow path having an openable/closable opening/closing section and an operation member having a side hole and configured to open and close the opening/closing section. The valve mechanism is positionable in a state in which the operation member penetrates through the opening/closing section to protrude therefrom and the side hole is located closer to the front end side than the opening/closing section. When infusion liquid is supplied in this state, the liquid flows to the flow path through the side hole and the dead space within the flow path is filled with the infusion liquid.

Indwelling needle and indwelling needle assembly

A transmitting station transmits FM radio waves which carry program information, such as news, and time information representing the current time. Each of receivers generates the first time information in accordance with an internal clock, corrects the first time information in accordance with the time information transmitted from the transmitting station, and generates the second time information. Each receiver progresses a game by changing the image displayed on the display, in accordance with a predetermined element, which is obtained from the program information transmitted from the transmitting station, and the first or second time information. Therefore, the progress of the game differs depending on the reception of the second information and the time information, and accordingly the progress of the game is unexpectable.

Transmission/reception system and receiver

Spectral image signals simultaneously provided by two CCD television cameras for an R-image and an IR-image are selected by a visual controller and are sent sequentially to a sending parabolic antenna where two spectral radiometers provided with photosensors measure the amounts of radiation energy of light rays of wavelengths around a wavelength corresponding to the R-image and light rays of wavelengths around a wavelength corresponding to the IR-image to obtain spectral radiation data representing the amounts of spectral radiation energy, respectively. The measured spectral radiation data is integrated and recorded by a data logger and sent through a modem and a connection box to a sending parabolic antenna, and spectral image signals representing the R-image and the IR-image received by a receiving antenna are applied to an image processing unit and the spectral radiation data received by the receiving parabolic antenna is transferred through a connection box and a modem to a computer where an image processing unit calculates a spectral reflection ratio IR/R, where IR is a corrected spectral reflectance of light rays corresponding to the IR-image and R is a corrected spectral reflectance of light rays corresponding to the R-image, and the reflectance ratio IR/R is displayed on a television monitor.

Method of correcting a measured image formed by a television camera

To achieve higher packaging density and one wafer level for a full-sized wafer memory, or wafer-scale integration memory system, the wafers are vertically stacked with each other at a predetermined interval. A packaging technique is improved in such a way that a memory system layout can be precisely realized and a precise through hole can be formed. Moreover, other chips are fixed on the wafer so as to achieve furthermore the high packaging density.

Wafer scale or full wafer memory system, packaging method thereof, and

A semiconductor device employing a new isolation process is disclosed, wherein an isolation area is a region in which a burying material is buried in a deep groove formed in a semiconductor body with a substantially constant width by anisotropic dry etching, semiconductor elements are formed in selected ones of semiconductor regions isolated by the isolation area, and others of the semiconductor regions, with no semiconductor element formed therein, have their whole surface covered with a thick oxide film which is produced by the local oxidation of the semiconductor body. The new isolation process is well-suited for a bipolar type semiconductor device, wherein the deep groove is formed so as to reach a semiconductor substrate through an N.sup.+ -type buried layer, and a thick oxide film formed simultaneously with the aforementioned thick oxide film isolates the base region and collector contact region of a bipolar transistor.

Method of manufacturing semiconductor device with constant width deep

Wafer scale of full wafer memory system, packaging method thereof, and

A bipolar type of semiconductor integrated circuit device is provided with U-shaped grooves which are formed by cutting a main surface of a semiconductor body to form isolation regions between bipolar transistors. A silicon oxide film can be formed in the U-shaped grooves by thermal oxidation simultaneously with the formation of a silicon oxide film used to form isolation regions between each collector contact region and base region. No separate step is needed for forming the silicon oxide film between the collector contact region and the base region. The thickness of the silicon oxide film can be controlled, and has a sufficient thickness even at its two edges, i.e., at its boundaries with the U-shaped grooves, so that the bipolar transistors exhibit good electrical characteristics. Namely, the collector resistance thereof does not increase, and the breakdown voltage at the pn junction between the collector region and the base region does not decrease. The U-shaped grooves can each comprise narrow and deep sub-grooves, with thick oxide films formed on the surfaces of the sub-grooves and a thick oxide film formed on a surface of an area between the sub-grooves, and with wiring formed on the oxide on the area between the sub-grooves.

Process of manufacturing semiconductor integrated circuit device having

In a liquid crystal driving apparatus for driving a liquid crystal display panel in accordance with an image signal, the response speed of a liquid crystal display panel is increased so as not to produce an afterimage upon motion image display. A signal is preprocessed by an inverse transfer function of the transfer function of the liquid crystal panel, i.e., signal processing for emphasizing an image change in a timer direction is performed, and the liquid crystal display panel is driven by using the processed data.

Liquid crystal display apparatus

In driving a color liquid crystal panel having red, green and blue color filters, a color liquid crystal display apparatus sets signal electrodes of these three colors in a no-bias status during a non-display period of an image signal in such a manner as to permit at least two colors of the signal electrodes have mutually different effective voltages. The effective voltages in the no-bias state are set at values which provide the optimum value for .DELTA.n.multidot.d (.DELTA.n: birefringence) in accordance with cell gaps d on the signal electrodes, thereby minimizing the height difference between the color filters.

Color liquid crystal display apparatus

Method of fabricating a semiconductor substrate, and semiconductor

Disclosed is a process for making a bipolar transistor which comprises an n-type Si semiconductor body having a convex portion, an insulation film covering the surface of the semiconductor body other than the convex portion, and a p-type polycrystalline Si layer formed on the insulation film. A p-type region formed in the convex portion serves as an intrinsic base region, the polycrystalline Si layer serves as an extrinic base region, an n-type region formed in the intrinsic base region serves as an emitter region, and the body serves as a collector region.

Process for making polysilicon contacts to IC mesas

Process of manufacturing semiconductor integrated circuit device and

In a signal electrode drive circuit of an image display apparatus, the latch pulses are sequentially shifted for a plurality of latch circuits so as to sequentially latch the digital image data, and the signal electrode of the dot-matrix type display panel is driven by the signal having a plurality of gradation, based upon the digital image data latched in the latch circuits. The image input data are alternately read out via the buffer circuits by two-phase clock pulses, the input data are transferred to the latch circuits in response to the two-phase clock pulses, and, as a consequence, image data of higher transfer frequency can be satisfactorily processed.

Signal electrode drive circuit for image display apparatus operable

Growing community of inventors

Fuchu, Japan

Masao Kawamura