Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Pansonic Corporation

Masao Kawaguchi

Hideki Kasugai

Shinichiro Nozaki

Norio Ikedo

Masaaki Yuri

Satoshi Tamura

Hiroshi Ohno

Osamu Imafuji

Shinichi Takigawa

Katsuya Samonji

Hiroyuki Hagino

Nozomi Naka

A semiconductor laser device includes: a first semiconductor layer of a first conductivity type; a light emitting layer formed above the first semiconductor layer; a second semiconductor layer of a second conductivity type formed above the light emitting layer; and an electrode formed above a ridge portion formed in the second semiconductor layer. The electrode is divided at positions at which an integrated value of light intensities of higher-order mode oscillation has a local maximum.

Semiconductor laser device

A nitride semiconductor laser element includes an electron barrier layer between a p-side light guide layer and a p-type clad layer. The electron barrier layer has a bandgap energy larger than that of the p-type clad layer. The p-side light guide layer is made of AlGaN containing no Indium, where 0&#x2264;x&#x3c;1. A film thickness dn of the n-side light guide layer and a film thickness dp of the p-side light guide layer satisfy relationships dp&#x2265;0.25 &#x3bc;m and dn&#x2265;dp.

Nitride semiconductor laser element

A semiconductor light emitting element includes an n-type light guide layer containing a group III nitride semiconductor, an active layer, and a p-type light guide layer, in which the n-type light guide layer includes a semiconductor superlattice layer which is a stack of superlattice layers, the semiconductor superlattice layer having a structure in which group III nitride semiconductors A and group III nitride semiconductors B are alternately stacked, each of the semiconductors A and each of the semiconductors B being stacked in each of the superlattice layers, a relationship Eg (A)&#x3e;Eg (B) holds, the semiconductor A is a film containing AlInN, and the film contains oxygen (O) at a concentration of at least 1&#xd7;10cm, the semiconductor A has a film thickness of at most 5 nm, and a current is injected in a stacking direction of the superlattice layers.

Semiconductor light emitting element

A semiconductor laser device includes a semiconductor-layer lamination () having an active layer () formed over a substrate (). The semiconductor-layer lamination () includes a front face which emits light, a strip-shaped optical waveguide formed in a direction transverse to the front face, a first region (A) extending in a direction transverse to the front face, a second region (B) having a top surface whose height is different from that of the first region (A), and a planar region (C) formed between the first region (A) and the second region (B), and having periodic surface undulations whose variation is smaller than that of the second region (B). The optical waveguide is formed in the planar region (C).

A semiconductor laser device includes a semiconductor multilayer structure selectively grown on a substrate other than on a predetermined region of the substrate. The semiconductor multilayer structure includes an active layer, and has a stripe-shaped optical waveguide extending in a direction intersecting a front facet through which light is emitted. The active layer has an abnormal growth portion formed at a peripheral edge of the predetermined region, and a larger forbidden band width portion formed around the abnormal growth portion and having a larger width of a forbidden band than that of a portion other than the abnormal growth portion of the active layer. The optical waveguide is spaced apart from the abnormal growth portion and includes the larger forbidden band width portion at the front facet.

Semiconductor laser device and method for manufacturing the same

A p-type GaN guiding layer, an n-type GaN layer, and an n-type AlGaN current blocking layer are sequentially formed over an active layer, and then part of the current blocking layer is etched by using an alkali solution and irradiating the part with light to form an opening. Thereafter, a second p-type GaN guiding layer is formed on the current blocking layer to cover the opening. In this structure, the GaN layer has a smaller energy gap than the AlGaN current blocking layer.

Method for fabricating nitride semiconductor laser device and nitride semiconductor laser device

A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In another upper portion of the multilayer structure, a ridge stripe portion including a waveguide, which extends in parallel to a principal surface of the multilayer structure, is formed. In the vicinity of the step region, a first region, in which the MQW active layer has a bandgap energy of Eg1, is formed, and a second region, which is adjacent to the first region and in which the MQW active layer has a bandgap energy of Eg2 (Eg2&#x3c;Eg1), is formed. The waveguide, which is formed so as to include the first and second regions and so as not to include the step region, performs self-oscillation.

Growing community of inventors

Osaka, Japan

Masao Kawaguchi