Omron Corporation

Masao Jojima

Koji Sano

Tomonori Seki

Keisuke Uno

Isamu Kimura

Akira Akiba

An electrostatic micro switch includes a fixed electrode disposed on a fixed substrate; a movable substrate elastically supported by the fixed substrate, the movable substrate including a movable electrode facing the fixed electrode. The movable substrate includes a semiconductor including a plurality of regions having different values of resistivity and a region of high resistivity is disposed near the movable electrode.

Electrostatic micro switch, production method thereof, and apparatus provided with electrostatic micro switch

A fixed voltage and a movable electrode are placed face to face with each other, and an insulating film is formed on the surface of the fixed electrode. The insulating film is made of a nitride film (SiN) as a main material, with oxide films (SiO) being formed on the front and rear surfaces of the nitride film. Moreover, a plurality of protrusions are formed on an area facing the movable electrode of the upper face of the insulating film. The charge quantity in the insulating film is mainly determined by a film thickness of the oxide film, and the nitride film is used for maintaining a sufficient film thickness required for the voltage proof characteristic. Thereby, it is possible to suppress variations in operational voltage characteristics such as on-voltage and off-voltage in an electrostatic actuator so as to prevent phenomena in which the electrostatic actuator fails to turn on even when a rated voltage is applied to the electrostatic actuator and in which the electrostatic actuator fails to turn off even when the driving voltage is turned off.

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Nara, Japan

Masao Jojima