Sony Corporation

Tohoku University

Sumitomo Electric Industries, Limited

Suzhou Institute of Nano-tech and Nano-bionics

Sony Shiroishi Semiconductor Inc.

Masao Ikeda

Hiroyuki Yokoyama

Takeharu Asano

Tomoyuki Oki

Takao Miyajima

Motonobu Takeya

Hideki Watanabe

Osamu Goto

Shiro Uchida

Tsuyoshi Tojo

Koshi Tamamura

Masaru Kuramoto

Katsuyoshi Shibuya

Tomonori Hino

Takashi Mizuno

Katsunori Yanashima

Shunsuke Kono

Yasuhiko Suzuki

Naoki Matsumoto

Hiroyuki Okuyama

Satoshi Ito

Masahiro Nakayama

Hironori Tsukamoto

Katsuhiro Akimoto

Akira Ishibashi

Rintaro Koda

Masaharu Nagai

Hiroshi Yoshida

Hui Calvin Yang

Satoshi Taniguchi

Masakazu Ukita

Kazushi Nakano

Shigeki Hashimoto

Yoshifumi Yabuki

Shinichi Ansai

Shinro Ikeda

Masayuki Arimochi

Shulong Lu

Masashi Shiraishi

Xinhe Zheng

Hiroshi Nakajima

Tadashi Yamamoto

Hiroji Kawai

Tsunenori Asatsuma

Shigetaka Tomiya

Etsuo Morita

Satoshi Tomioka

Masafumi Ozawa

Tomomasa Watanabe

Tsuyoshi Fujimoto

Satoru Kijima

Toyoharu Ohata

Norihiko Yamaguchi

Yumi Sanaka

Futoshi Hiei

Takashi Tange

Osamu Matsumoto

Toshihiro Hashidu

Makoto Oota

Motonobu Taketani

Ichiro Nomachi

Manabu Taniguchi

Tomomi Sasaki

Yasue Mikata

Yoshino Iochi

Akira Ishibash

A light receiving/emitting elementincludes: a light receiving/emitting layerin which a plurality of compound semiconductor layers are stacked; and an electrodehaving a first surfaceA and a second surfaceB and made of a transparent conductive material, in which the second surface faces the first surfaceA, and the electrode is in contact, at the first surfaceA, with the light receiving/emitting layer. The transparent conductive material contains an additive made of one or more metals, or a compound thereof, selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron, and copper, and concentration of the additive contained in the transparent conductive material near an interface to the first surfaceA of the electrodeis higher than concentration of the additive contained in the transparent conductive material near the second surfaceB of the electrode

Light receiving/emitting element, solar cell, optical sensor, light emitting diode, and surface emitting laser element

A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. A plurality of sub-cells are laminated, each including first and second compound semiconductor layers. At least one predetermined sub-cell is configured of first layers and a second layer. In each of the first layers, a 1-A layer and a 1-B layer are laminated. In the second layer, a 2-A layer and a 2-B layer are laminated. A composition A of the 1-A layer and the 2-A layer is determined based on a value of a band gap of the predetermined sub-cell. A composition B of the 1-B layer and the 2-B layer is determined based on a difference between a base lattice constant of the base and a lattice constant of the composition A. Thicknesses of 1-B layer and 2-B layer are determined based on difference between base lattice constant and a lattice constant of composition B, and on thickness of the 1-A layer and thickness of 2-A layer.

Multi-junction solar cell, photoelectric conversion device, and compound-semiconductor-layer lamination structure

A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively W, and W, W&#x3e;Wis satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.

Semiconductor optical amplifier

A laser diode capable of performing self-pulsation operation, and capable of sufficiently reducing the coherence of laser light and stably obtaining low-noise laser light is provided. A laser diode includes: a laser chip including at least one laser stripe which extends in a resonator length direction between a first end surface and a second end surface opposed to each other, in which the laser stripe includes a gain region and a saturable absorption region in the resonator length direction, and the width of the laser stripe in the saturable absorption region is larger than the width of the laser stripe in the gain region.

Laser diode, optical disk device and optical pickup

An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

Method of driving a laser diode

A semiconductor light emitting device made of nitride III-V compound semiconductors including an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method

A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.

Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same

A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2&#xd7;10cmor more and 1&#xd7;10cmor less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.

Mode-locked semiconductor laser device and driving method thereof

An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration. The laser diode can be driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

A method of driving an ultrashort pulse and ultrahigh power laser diode device having a simple composition and a simple structure is provided. In the method of driving a laser diode device, light is injected from a light injection means into a laser diode device driven by a pulse current having a value 10 or more times as large as a value of a threshold current.

Method of driving laser diode device and laser diode equipment

Growing community of inventors

Kanagawa, Japan

Masao Ikeda