Fujitsu Corporation

Masao Hayashi

Taiji Ema

Junichi Tamura

Narumi Ohkawa

Jinichi Yoshizawa

Hiroichi Nara

A semiconductor device includes an interlayer insulation film formed on a substrate so as to cover first and second regions defined on the substrate, and a capacitor formed over the interlayer insulation film in the first region, wherein the interlayer insulation film includes, in the first region, a stepped part defined by a groove having a bottom surface lower in level than a surface of the interlayer insulation film in the second region.

Semiconductor integrated circuit including a DRAM and an analog circuit

A data transfer system includes a plurality of functional blocks each provided with a function module for controlling data transfer between memories of the plurality of functional blocks, by being connected to a function module of other functional blocks via n sets of data signal lines and clock signal lines so that the data transfer proceeds in a synchronized manner. Each of the n sets of data signal lines and clock signal lines is appropriately combined with one another depending on a required condition for communicating with destination functional blocks, such that a plurality of sets of data signal lines and clock signal lines are used for parallel transfer and a single set of a data signal line and a clock signal line is used for serial transfer.

Growing community of inventors

Kawasaki, Japan

Masao Hayashi