Kabushiki Kaisha Toshiba

Masao Goto

Morihiko Ikemizu

Yuji Fukuzawa

The semiconductor device comprises an insulating film having a device hole; inner leads disposed on one main face of the insulating film; a semiconductor element, which is mounted on the insulating film and connected to the ends of the inner leads; and a resin-encapsulating layer for covering such connections and the like, wherein the device hole of the insulating film has a flat shape externally protruded in the neighborhood of the middle on the short side, and a length of the long side containing the projections is larger than the corresponding length of the semiconductor chip. The expansion of the resin-encapsulating layer coated on the insulating film has a length on the short side of the semiconductor element larger than that on the long side. In a semiconductor device having the UNT structure in particular, a strength of adhesive between the resin-encapsulating layer and the insulating film on the short sides of the semiconductor chip is improved, a crack is prevented from being caused, and high reliability in connection can be obtained.

Semiconductor device

The present invention provides a semiconductor device. In the device of the present invention, a metal lead wire is mounted to one surface of a carrier tape. One end of the metal lead wire is connected to a semiconductor chip. A lead frame is mounted to one surface of a reinforcing plate. The other end of the metal lead wire is connected to one end of an inner lead wire. The semiconductor chip is mounted to one surface of the reinforcing plate having an open portion positioned in the tip portion of the inner lead. Further, the semiconductor chip is covered with a resin layer.

Growing community of inventors

Yokohama, Japan

Masao Goto