Toyota Jidosha Kabushiki Kaisha

Kabushiki Kaisha Toyota Chuo Kenkyusho

Masanori Usui

Takahide Sugiyama

Koji Hotta

Sachiko Kawaji

Hiroshi Osada

Makoto Imai

Tomoyuki Shoji

Jun Saito

Satoshi Hirose

Hiroshi Hohjo

Norimune Orimoto

Masayasu Ishiko

Yuka Yamada

Hirofumi Ito

Takashi Asada

Atsushi Tanida

Atsushi Kawamoto

Hidehiko Kimura

Tadayoshi Matsumori

Makoto Kuwahara

Tsuguo Kondoh

A highly reliable bonded structure having excellent thermal fatigue resistance characteristics and thermal stress relaxation characteristics is provided. The bonded structure of the present invention comprises a first member, a second member capable of being bonded to the first member, and a bonding part interposed between a first bond surface at the first member side and a second bond surface at the second member side to bond the first member and the second member. The bonding part has at least a bonding layer, a reinforcing layer, and an intermediate layer. The bonding layer is composed of an intermetallic compound and bonded to the first bond surface.

Bonded structure and method of manufacturing the same

A thermal conductive stress relaxation structure is interposed between a high-temperature substance and a low-temperature substance to conduct heat in a heat-transfer direction from the high-temperature substance to the low-temperature substance. The structure includes an assembly configured such that a thermal conductive material gathers in a non-bonded state having stress relaxation effect. Such an assembly is a rolled-up body configured such that a carbon-based sheet material and a metal-based sheet material are alternately rolled up, for example. This structure has one or more interfaces at which adjacent parts can slide, thereby dividing a deformable region to relax the thermal stress. It has a low rigidity and can thus deform to release the thermal stress. The structure can suppress the thermal stresses and the shape changes that would be generated in the high-temperature substance and the low-temperature substance, and each physical body located there between.

Thermal conductive stress relaxation structure

A cooling type switching element module includes an outer conductor pipe, an inner conductor pipe that transmits electric power in conjunction with the outer conductor pipe, and first and second switching elements. The first switching elements are provided on outer surfaces of the outer conductor pipe, and the second switching elements are provided on outer surfaces of a projecting portion of the inner conductor pipe. A coolant flows within the inner conductor pipe, and outside the outer conductor pipe. The first and second switching elements are cooled from both sides by the coolant flowing within the inner conductor pipe, and by the coolant flowing outside the outer conductor pipe. By employing the above-described structure, it is possible to provide a switching element module having a cooling function, in which improved cooling performance, improved electrical performance, and downsizing are achieved.

Cooling-type switching element module

A heat transfer member is disposed between a semiconductor element and an electrode plate. The heat transfer member comprises a metal portion extending between a first face at the semiconductor element side and a second face at the plate electrode side, and a ceramic portion surrounding the metal portion. An area of the first face is less than an area of the second face in the metal portion.

Heat transfer member and module with the same

The present invention relates to a technique for reducing the on-voltage of the semiconductor device by increasing the concentration of minority carriers in the deep region () and the intermediate region (). A semiconductor device according to the invention comprises an electrode, a top region () of a second conductivity type connected to the electrode, a deep region of the second conductivity type, and an intermediate region of a first conductivity type connected to the electrode. A portion of the intermediate region isolates the top region and the deep region. The semiconductor device further comprises a gate electrode () facing the portion of the intermediate region via an insulating layer. The portion facing the gate electrode isolates the top region and the deep region. The semiconductor device according to the invention further comprises a barrier region () that is formed within the intermediate region and/or the top region.

Trench gate field effect devices

The present invention provides a technique for accumulating minority carriers in the body region, that is, the intermediate region interposed between the top region and the deep region, and thus increasing the concentration of minority carriers in the intermediate region. A semiconductor device has a top region () of a second conductivity type, a deep region () of the second conductivity type, and an intermediate region () of a first conductivity type for isolating the top region and the deep region. The semiconductor device further has a trench gate () facing a portion of the intermediate region via an insulating layer (). The portion facing the trench gate isolates the top region and the deep region. The trench gate extends along a longitudinal direction. The width of the trench gate is not uniform along the longitudinal direction; instead the width of the trench gate varies along the longitudinal direction.

The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region () whose potential is floating is formed within a ptype body region (). The n type semiconductor region () is isolated from an ntype emitter region () and an ntype drift region () by the body region (). Furthermore, a second electrode () is formed, so as to oppose to at least a part of the semiconductor region () via an insulator film (). The second electrode () does not oppose to the emitter region ().

Semiconductor devices

Growing community of inventors

Seto, Japan

Masanori Usui