Hitachi-Kokusai Electric Inc.

Tdk Corporation

Hitachi, Ltd.

Shin-Kobe Electric Machinery Co., Ltd.

Other

Headway Technologies, Incorporated

Hitachi Chemical Company, Ltd.

Kokusai Electric Corporation

Sanyo Denki Co., Ltd.

Asahi Kasei Microdevices Corporation

Kokusai Electric Co., Ltd.

Nihon Techno Bute Limited

Masanori Sakai

Kazuyuki Okuda

Yukinao Kaga

Kazumasa Fukuda

Kazuyuki Toyoda

Hiraku Hirabayashi

Haruyuki Morita

Tsuyoshi Umehara

Masashi Shiraishi

Joichiro Ezaki

Norikazu Mizuno

Hirohisa Yamazaki

Kenichi Takano

Yuji Takebayashi

Mikio Matsuzaki

Katsumi Mabuchi

Seiji Watanabe

Kunliang Zhang

Po-Kang Wang

Hiroshi Yamazaki

Masayuki Asai

Naoki Ohta

Isamu Sato

Tsutomu Aoyama

Shunji Saruki

Chyu-Jiuh Torng

Makoto Yoshida

Makoto Hayashi

Arito Ogawa

Tsutomu Tanaka

Kazuya Watanabe

Shinsuke Kobayashi

Yuichi Ishikawa

Kenzo Makino

Satoru Takahashi

Satoshi Miura

Tatsuyuki Saito

Toru Kagaya

Takashi Yokogawa

Taketoshi Sato

Noriyuki Ohnaka

Hironobu Miya

Nobuhito Shima

Ken-ichi Takano

Katsumi Ohsumi

Takuya Takahashi

Hideki Horita

Nobuo Ishimaru

Yamato Asakura

Tadashi Kontani

Tsutomu Kato

Kyoko Honbo

Shinya Sasaki

Yasuo Kunii

Yuzuru Iwai

Atsuro Seino

Kenji Inage

Yunfei Li

Yasuo Kondo

Shigeo Hattori

Yoshiyuki Takamori

Masato Nakamura

Masakiyo Izumiya

Koichi Terunuma

Eisuke Nishitani

Keiji Koga

Takaaki Noda

Masanori Yoshida

Shinichirou Mochizuki

Kenji Araki

Hideharu Itatani

Makoto Nagase

Masahisa Inagaki

Yoshitaka Kojima

Toshihito Miyashita

Nozomu Hachisuka

Masakazu Shimada

Toshiaki Maeda

Masateru Suwa

Hideyuki Hosokawa

Kazuhiro Yuasa

Yoichi Wada

Satoshi Abe

Takakazu Imai

Kazuhiro Ishida

Isao Masaoka

Yasutoshi Tsubota

Keisuke Takasugi

Atsushi Hirano

Yosuke Komasaki

Yoshihiko Yanagisawa

Hirofumi Takahashi

Hidefumi Ibe

Hayato Miyashita

Kazumi Fujii

Toshiaki Arato

Yasuko Aoki

Takashi Saito

Fumio Sato

Kimihiko Akahori

At a reference position within a first plane, a magnetic field to be detected has a first direction that changes within the first plane. A magnetic sensor includes an MR element. The MR element includes a magnetic layer having first magnetization that can change in direction within a second plane. The first plane and the second plane intersect at a dihedral angle α other than 90°. The magnetic field to be detected can be divided into an in-plane component parallel to the second plane and a perpendicular component perpendicular to the second plane. The in-plane component has a second direction that changes with a change in the first direction. The direction of the first magnetization changes with a change in the second direction. A detection value depends on the direction of the first magnetization.

Magnetic sensor and magnetic sensor system

A magnetic sensor includes a first insulating layer, a second insulating layer, a third insulating layer, a lower coil element located on an opposite side of the first insulating layer from the second insulating layer, and a second MR element. The second MR element includes a magnetization pinned layer and a free layer. The magnetization pinned layer and the free layer are located on an opposite side of the third insulating layer from the second insulating layer. The first and third insulating layers each contain a first insulating material. The second insulating layer contains a second insulating material.

Sensor including a plurality of insulating layers made of different insulating materials

At a reference position within a first plane, a magnetic field to be detected has a first direction that changes within the first plane. A magnetic sensor includes an MR element. The MR element includes a magnetic layer having first magnetization that can change in direction within a second plane. The first plane and the second plane intersect at a dihedral angle &#x3b1; other than 90&#xb0;. The magnetic field to be detected can be divided into an in-plane component parallel to the second plane and a perpendicular component perpendicular to the second plane. The in-plane component has a second direction that changes with a change in the first direction. The direction of the first magnetization changes with a change in the second direction. A detection value depends on the direction of the first magnetization.

An angle sensor includes a first magnetic sensor and a second magnetic sensor. The first magnetic sensor includes first and second detectors, and first and second analog-to-digital converters for converting analog detection signals generated by the first and second detectors into digital detection signals. The second magnetic sensor includes third and fourth detectors, and third and fourth analog-to-digital converters for converting analog detection signals generated by the third and fourth detectors into digital detection signals. The first to fourth analog-to-digital converters perform sampling at the same sampling time.

Angle sensor and detection device

An object is to provide a magnetic sensor module that suppresses a size of a magnetic sensor chip while applying a uniform calibration magnetic field to a magneto-resistive element. Provided is a magnetic sensor module comprising an IC chip having a first coil; and a magnetic sensor chip that is disposed on a surface of the IC chip and includes a first magnetic sensor that detects magnetism in a direction of first axis, wherein a planar shape of the IC chip encompasses a planar shape of the magnetic sensor chip, and the first coil has a planar shape including three or more sides, and is, when seen in a cross section along at least one side of the planar shape, is formed so as to cover a region, in a direction of the one side, of the first magnetic sensor.

Magnetic sensor module and IC chip employed in same

A substrate processing apparatus, includes: a substrate holder including at least one support column to which a mounting part on which a substrate is mounted is attached and at least one auxiliary support column to which the mounting part is not attached, wherein the substrate holder is configured such that a diameter of the auxiliary support column is smaller than a diameter of the support column, and wherein the substrate holder is configured such that when the substrate is held by the mounting part, an end portion of the substrate and each of the support column is spaced apart from each other by a predetermined length.

Substrate processing apparatus, substrate holder and mounting tool

A magnetic sensor includes a magnetic detection element circuit that includes first and second magnetic detection elements, which are connected in series, and an output terminal, which is positioned between the first and second magnetic detection elements; an impedance matching device, which has a prescribed input voltage range and is connected to an output terminal of the magnetic detection element circuit; a first current supply source, which supplies an electric current to the magnetic detection element circuit; and a second current supply source, which supplies an electric current to the impedance matching device. A resistor is provided between the output terminal of the magnetic detection element circuit and the first current supply source and/or a reference electric potential point.

Magnetic sensor

The present invention is provided to improve quality or manufacturing throughput of a semiconductor device. A method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.

Method of manufacturing semiconductor device

There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.

Method for processing substrate and substrate processing apparatus

On each negative plate (), a non-woven fabric () composed of fibers of at least one material selected from a group of materials comprising glass, pulp and polyolefins comes into contact with the entire surface of the plate without being integrated with the plate. Each negative plate (), which is in contact with the non-woven fabric (), is contained in an envelope separator () comprising a microporous synthetic resin sheet, and is laminated with a positive plate (). The non-woven fabric is manufactured through papermaking process in which glass fibers, pulp and silica powder are preferably used and dispersed in water as the main components.

Lead acid battery

Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. The method comprises: (a) supplying a metal-containing gas simultaneously with one selected from the group consisting of an oxygen-containing gas, a halogen-containing gas and combinations thereof into a processing chamber accommodating the substrate; and (b) supplying a nitrogen-containing gas with one of the oxygen-containing gas, the halogen-containing gas and the combinations thereof into the processing chamber.

Method of forming metal-containing film

Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a substrate processing apparatus comprises a chamber lid assembly including a first heating member, a susceptor positioned proximal to the chamber lid assembly, wherein the susceptor includes a second heating member for heating the substrate, a process chamber accommodating at least the chamber lid assembly and the susceptor and a controller configured to control the first heating member so as to refrain the conduction of heat energy generated by the second heating member from the susceptor to the chamber lid assembly.

Atomic layer deposition processing apparatus to reduce heat energy conduction

To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.

There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.

Method of manufacturing semiconductor device and substrate processing apparatus

Growing community of inventors

Tokyo, Japan

Masanori Sakai