Sony Corporation

Sony Semiconductor Solutions Corporation

Masanori Ohashi

Hideshi Abe

Keiji Tatani

Atsuhiko Yamamoto

Atsushi Masagaki

Masakazu Furukawa

Hideo Kanbe

Takahisa Kusaka

Akio Izumi

Ritsuo Takizawa

Atsushi Asai

Takayoshi Higuchi

A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

Solid-state image pickup device and method for producing the same

A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer.

Solid-state imaging device and method for fabricating same

Solid-stage image pickup device and method for producing the same

In a method of manufacturing a solid-state image pickup device having a virtual gate structure, in a process of forming a profile of a sensor portion, when ion implantation to form a p&plus; type layer at a substrate surface side is carried out while the ion implantation direction is tilted with respect to the substrate surface, the ion implantation is divisively carried out at plural times and from multiple ion implantation directions so that the total dose amount is matched, whereby impurities can be implanted into any area of the sensor portion and thus no impurities-unformed area occurs.

Method of manufacturing solid-state image pickup device

A solid state image pick-up device comprises a plurality of light receiving sensors which perform photoelectric conversion being disposed in a matrix form on the surface of a substrate, charge transfer portions for transferring signal charges, transfer electrodes positioned in the upper portions of the charge transfer portions and an interlayer insulating layer, and over the interlayer insulating layer a first stripe-on-chip lenses having approximate semicylindrical shapes are formed along the vertical or horizontal lines of light receiving light sensors and a second stripe-on-chip-lenses having an approximate semicylindrical shapes are formed over the first stripe-on-chip-lenses in a direction making a right angle with that of the first stripe-on-chip-lenses. The radius of curvature of the first stripe-on-chip-lenses and the second stripe-on-chip-lenses can be decided independent from each other, so that the optimum light condensing conditions are easily obtained, which makes it possible to obtain a solid state image pick-up device of excellent light sensitivity characteristics.

Solid state image pick-up device

In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1.times.10.sup.16 atoms/cm.sup.3 or more.

Semiconductor wafer and method of manufacturing same

Semiconductor wafer for epitaxially grown devices having a sub-surface

In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN Junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

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Nagasaki, Japan

Masanori Ohashi